epilayer 中文意思是什麼

It also put forward that how to select appropriate epilayer doping concentration and thickness, pn junction depth and jte technology to increase the breakdown voltage of 4h - sic mps. a power dissipation model of 4h - sic mps was established

通過對4h - sicmps擊穿特性的二維模擬，提出如何選擇合適的pn結深度、外延層摻雜濃度和厚度以及如何運用jte終端技術來提高擊穿電壓。

Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )

本論文主要論述了在espd - u裝置上，採用電子迴旋共振等離子體增強mocvd （ ecr - pamocvd ）方法，在藍寶石襯底上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝，包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長；通過高能電子衍射、 x射線衍射和原子力顯微鏡測試，並且對這些測試結果進行了詳細的比較研究，得出了較優化的工藝條件，生長出了晶質較好、表面較平整的aln外延層；進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫度的限制，我們沒有能夠生長出原子級平滑的aln外延層表面，因而沒能夠生長出密度比較大和直徑比較小的量子點。

B ) sbd was made using the si epilayer as the active layer, qualified with a set of device technology

B ）在薄硅外延片的生長基礎上，探索製作肖特基二極體的相關工藝，研製高頻sbd原型器件。

Based on the requirement of the device, we grow the films of silicon of high quality. the thickness of the epilayer is from 0. 4 u m tol p m, the doping concentration can be controlled conveniently

然後，根據器件的要求，利用uhv cvd技術，生長出優質薄硅外延片，其厚度在0 . 4 m 1 m ，摻雜濃度可任意調節，晶體質量良好。

Based on this model, it was presented that how to select the thickness of epilayer, the doping concentration of epilayer, schottky contact, the width of pn grid, the depth of pn junction and the doping concentration of pn junction for the trade - off between forward and reverse characteristics

基於此模型，提出在對正反向特性進行折衷時，如何選擇合適的外延層摻雜濃度和厚度、肖特基接觸和pn結網格寬度、 pn結深度和摻雜濃度。

With optimized buffer layer growth parameters, gan epilayer with improved quality has been grown, whose fwhm of ( 0002 ) plane dc - xrd rocking curve is 6 arcmin

以優化的緩沖層生長條件得到質量有明顯改善的gan外延層， gan薄膜的（ 0002 ）面雙晶dc - xrd掃描的半高寬為6arcmin 。

The intrinsic carrier concentration reduces when decreasing the v / iii ratio. the high quality of in0. 53gao. 47as can be obtained at the range of 10 - 30 seconds of exchange time between ashs and phs. when the thickness of the buffer layer between the inp substrate and ingaas epilayer is 0. 2 um the mobility becomes the maximum and the carrier concentration is the lowest

/比對外延層的表面形貌有較大影響，增大/比有利於提高材料的結晶質量；隨著/比增加，遷移率升高；本徵載流子濃度隨著/比減少而降低； ash _ 3和ph _ 3轉換時間在10秒到30秒之間可以獲得質量較好的ingaas外延層；在inp緩沖層厚度為0 . 2 m時遷移率達到最大，載流子濃度達到最低。

In this thesis, we grow hexagonal gan on c - plane sapphire substrates in a horizontal mocvd reactor equipped with an in situ normal incidence reflectance monitoring, and the focus has been turned to improve the quality of unintentionally doped gan epilayer. listed below are the main contents of this thesis. ( 1 ) a single - wavelength normal incidence reflectance monitoring system was installed

本文利用配有近垂直入射激光反射在位監測的臥式mocvd在c面藍寶石襯底上生長六方相的gan薄膜，圍繞提高本徵gan外延層質量的目的，開展了具體如下的工作： （ 1 ）在mocvd設備上搭建了一套單波長近垂直入射激光反射在位監測系統。

The high density dislocations behave like deep - level donors and the dislocations scattering is considerable at low temperature especially. besides, when the insb buffer layer thickness became 80nm, the roughness of insb epilayer increased. the initial stage of insb growth on gaas substrate is

透射電子顯微鏡發現，在insb / gaas薄膜的界面處分佈有間距為3 . 5nm的失配位錯陣列，界面處的高密度位錯可體現出類似深能級施主的特性，尤其在低溫下對載流子散射更加顯著。

In order to deal with large mismatch ( 14. 6 % at room temperature ) between gaas and insb, a insb buffer layer was deposited firstly at low temperature 350, followed by a insb epilayer being deposited at higher temperature 440

為了克服insb與gaas間14 . 6 %的晶格失配度，實驗設計先低溫生長一定厚度的insb緩沖層，隨后升溫生長insb外延層。

The results indicated that dmzn flow rate predominately controlled the growth rate of znse epilayer in this work

研究發現實驗中znse薄膜生長速率主要受dmzn流量控制。

Morphology of low temperature buffer layers and its influence on inp epilayer growth

低溫緩沖層的表面形貌及對其外延層生長的影響

By means of quantitative analysis, we accessed growth rate and film thickness of gan epilayer, and even determined in real time the thickness of buffer layer from in situ measurements of normal incidence reflectance

通過對在位監測曲線的分析，確定gan生長速率以及外延層的厚度，並利用監測曲線實時標定緩沖層的厚度。

Firstly we analyze the requirement of sbd of high frequency for the doping concentration and thickness of the epilayer, for the structure parameter of the device. we design the optimum device parameter based on this. 2

首先，從理論上分析出高頻肖特基二極體對材料的外延層厚度摻雜濃度的要求，以及其它的器件結構參數要求，以此為依據，設計出最佳的器件參數。

No high - temperature pre - heat - treatment of the si substrate was used to obtain epilayers. the zns epilayer quality was improved with decreasing the substrate temperature. the small x - ray diffraction fwhm was obtained at 300, which implied that the zns epilayers had higher quality

隨著生長溫度的降低， zns單晶薄膜質量提高，由在300時得到較小x -射線衍射fwhm的結果表明獲得了結晶質量較高的zns單晶薄膜。

Larger growth pressure of buffer layer led to the dramatic increase of structural and optical quality of gan epilayer, and the improvement in quality was attributed to the transition of growth mode from 3d to quasi 2d, which was revealed by scanning electron microscope

發現緩沖層的生長壓力變化對退火后緩沖層表面的狀態影響極大，增大緩沖層生長時的反應室壓力可以明顯提高外延gan的晶體質量和光學質量。通過sem分析，發現提高緩沖層生長壓力時，高溫gan生長明顯經歷了從三維生長到二維生長的過渡，晶體質量明顯提高。

Different from fabricating sbd with bulk semiconductor, thin semiconductor films were utilized as the active layer in order to minimize the series resistance. si epilayer with sub - micro thickness was deposited by ultra high vauum chemical vapor deposition ( uhv - cvd ). the sbd with rectifying performance was developed, using si epilayer as the active layer

利用我們自行研製的超高真空化學氣相沉積（ uhv - cvd ）技術外延了亞微米級的si薄膜，成功的製作了具有整流特性的高頻薄硅肖特基二極體的原型器件。