epitaxial device 中文意思是什麼
epitaxial device
解釋
晶膜設備-
A thin epitaxial layer ( 10gm ) ldmos device used n - burry layer structure was proposed in the paper during the high - voltage device design, which is helpful to improve the drive circu it ? technology
在高壓器件研究中，提出了一種外延層厚度為10 m採用n埋層結構薄外延高壓ldmos器件，對進一步改進驅動電路的工藝有著積極的意義。 -
Considering the shortcoming of thick epitaxial layer technology, author proposed a thin epitaxial layer ldmos used n - burry layer. through optimizing the n - burry layer ? length and impurity dose will increase the device ? breakdown voltage
針對目前厚外延工藝的缺點，提出的薄外延ldmos採用n埋層，通過優化n埋層長度、注入劑量可提高器件耐壓。 -
During the high - voltage device design, the thick epitaxial layer ldmos which is compatible with current technology was researched. this device used piecewise vld and multiple region structure f reduce field layer. the using of the f reduce field layer effectively reduce the surface electric field of the device, shorten the length of its drift region, enlarge the choice of range of the ion implant dose of the p layer, and effectively restrain the disadvantageously affection on the breakdown voltage of the interface charge qss
在高壓器件研究中對與現有工藝相兼容厚外延ldmos進行研究，該結構採用分段變摻雜多區p ~ -降場層，有效降低器件的表面電場，縮短器件的漂移區長度，增大p ~ -降場層注入劑量的選擇范圍，並有效地抑制界面電荷qss對器件耐壓的不利影響。 -
Up to present we have prepared the epitaxial simox substrate ( i layer 0. 37um, silicon layer 2. 8um ), and done the circuit design, process integration, device simulation and some layout design )
本項目目前已完成了simox外延襯底的制備（ i層0 . 37um ，外延硅層2 . 8um ） ，以及功率開關集成電路的電路設計，工藝設計和部分版圖設計。 -
In this paper, accordiflg to the working pri nci p1es of devi cg, we design the struc ture narameter of device, and then the hexagona1 and cubic gan epitaxial layers were grown. on sapp1re and gaas substrates respect ive1y. as a resu1 t, we have fabricated gan - - based msm uv photodetectors, the responsi vity of device reach 0
本文依據msm結構探測器的工作原理，設計了器件的結構參數，並分別以藍寶石和gaas為襯底材料生長了六方結構和四方結構的gan材料，在此基礎上制備出gan - msm紫外光探測器，並取得了一些有意義的結果，我們的器件光響應度最好可達0 . 21a w 。
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