epitaxial growth 中文意思是什麼
epitaxial growth
解釋
取向附生，外延生長-
Liquid goldbright gold liquid phase epitaxial growth system
液相磊晶生長系統 -
Epitaxial - growth mesa transistor
晶膜生長臺面晶體管 -
Metal organic molecular beam epitaxial growth system
有機金屬分子束磊晶生長系統 -
Gas source molecular beam epitaxial growth system
瓦斯源分子束磊晶生長系統 -
Photo assisted vapor phase epitaxial growth system
光輔助汽相磊晶生長系統 -
Reduced pressure vapor phase epitaxial growth system
減壓汽相磊晶生長系統 -
Reduced presure vapor phase epitaxial growth system
減壓汽相磊晶生長系統 -
Abstract : based on the ahievement of epitaxial growth in several perovskite oxide films, we discuss the importance of substrate temperature ( ts ) and substrate material in the epitaxial growth of perovskite oxide thin films. influences of ts on growth orientation and epitaxial threshold temperature were observed. the results indicate that during the growth of the oxide films the phase formation and growth dynamics should be taken into consideration. the threshold temperature for epitaxial growth depends on the substrate materials. this demonstrates the influence of substrate material on the initial nucleation and epitaxial growth
文摘:在成功地外延生長超導、鐵電、鐵磁等多種性質的鈣鈦礦結構氧化物薄膜的基礎上，討論影響氧化物薄膜外延生長的一些因素.考慮到相形成和薄膜生長動力學，在利用脈沖激光淀積法外延生長氧化物薄膜中襯底溫度是十分重要的工藝參數.襯底溫度對成相和生長薄膜的取向都有影響.考慮到薄膜是首先在襯底表面成核、成相併生長.因此襯底材料晶格的影響是不容忽視的.觀察到襯底材料對薄膜外延生長溫度的影響.在適當的工藝條件下，利用低溫三步法工藝制備得到有很強織構的外延薄膜.這突出表明界面層的相互作用對鈣鈦礦結構薄膜的取向有著相當大的影響 -
Metal organic vapor phase epitaxial growth system movpe system
有機金屬汽相磊晶生長系統 -
Low pressure vapor phase epitaxial growth system
低壓汽相磊晶生長系統 -
Low presure vapor phase epitaxial growth system
低壓汽相磊晶生長系統 -
Vapor phase epitaxial growth system
汽相磊晶生長系統 -
The novel method of liquid phase epitaxial growth process of p - sic from p - sic film on si substrate in c - saturated si solvent is further investigated. some processes of acquiring the fundamental technical parameters and some solution to some critical technical problems are introduced. especially, the optimized technical schemes of effectively restraining such a - sic polytypes as gh - sic coring and growing in p - sic epitaxial growth process is presented
對利用硅襯底上的- sic薄膜從碳飽和硅熔體中外延生長- sic晶體的創新方法進行了工藝探索，介紹了基本工藝參數的獲取過程和幾個關鍵工藝問題的解決方法，特別是提出了通過工藝條件的調控來有效抑制6h - sic等型同質異構體在- sic生長過程中成核生長的工藝方案。 -
At present the prevailing epitaxial growth techniques of gan are metalorganic chemical vapor deposition ( mocvd ), molecule beam epitaxy ( mbe ) as well as hvpe
目前gan的外延生長技術一般採用有機金屬化學氣相外延法（ mocvd ） ，在藍寶石襯底的（ 0001 ）面上外延生長gan材料，另外還有分子束外延技術（ mbe ）及鹵化物汽相外延技術（ hvpe ）等。 -
Sbn has currently being investigated as a potential material for many microdevice applications such as pyroelectric infrared detectors, electrooptic modulators, dram, etc. with the rapid development of the optical communication industry, especially the development of integrated optical devices, a successful hetero - epitaxial growth of the film on si substrate is necessary which can reduce loss in the waveguide effectively
隨著光通訊產業的迅速發展，特別是集成光學的發展，迫切需要在硅襯底上生長擇優取向性好的鈮酸鍶鋇晶體，來有效地減少光在波導結構中的損耗。本論文探討了sbn薄膜的溶膠-凝膠（ sol - gel ）生長技術及其原理。 -
( 110 ) ag single crystal is more suitable than ( 100 ) and ( 111 ) for epitaxial growth of ybco films. the epitaxial relationships of ybco films deposited on polycrystal ag substrates are also obtained
（ 110 ）取向的銀單晶沉積的ybco薄膜不僅具有強立方織構，而且面內取向集中， （ 110 ）取向的銀單晶更適合ybco薄膜的生長。 -
In this thesis, some fundamental topics on p - sic crystal growth such as the design of the crucible assembling system, the thermal field distribution and the liquid phase epitaxial growth of p - sic films deposited on si have been discussed. in brief, following major creative results have been obtained : 1
本文探索碳化硅晶體生長技術的若干基本問題，特別對熱系統的設計和熱場分佈問題，以及用- sic薄膜在碳飽和硅熔體中進行液相外延生長的基本工藝問題等進行了研究，獲得以下主要創新結果： 1 -
We conclude that due to the competition between the surface oxide removal and the ge deposition, geh4 - based clean is not suitable for high quality si epitaxial growth by chemical vapor deposition techniques
同樣，我們證實了當表面氧覆蓋在一定的值以下時，在清洗之後的外延層生長不需要清洗的很好有效表徵。 -
It possess many of the physical properties such as high atomic number ( z ), large enough band gap, high resistivity, relatively low leakage currents, and high intrinsic mobility - lifetime ( ut ) product, which are required for room - temperature nuclear radiation detectors. so it is widely used in nuclear medical imaging system, space engineering, and astrophysics, environmental monitoring, and so on. in addition, it is the best substrate for lattice matched epitaxial growth of hg1 - xcdxte ( mct ) thin films and solar cells
用單晶czt製成的探測器可在室溫下工作，工作溫度范圍寬（ - 20 40 ） ，能量探測范圍寬（ 10kev 6mev ） ，對x射線、射線能量解析度高，在x射線、射線成像、天體物理研究、工業探測、安全檢測、核輻射探測、核廢料監控、 x射線熒光分析（ xrf ） 、 x射線斷層掃描和核醫學等方面有重要用途。 -
Liquid phase epitaxial growth technique
液相外延生長技術
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