epitaxial vapor growth 中文意思是什麼
epitaxial vapor growth
解釋
外延氣相生長-
Photo assisted vapor phase epitaxial growth system
光輔助汽相磊晶生長系統 -
Reduced pressure vapor phase epitaxial growth system
減壓汽相磊晶生長系統 -
Reduced presure vapor phase epitaxial growth system
減壓汽相磊晶生長系統 -
Metal organic vapor phase epitaxial growth system movpe system
有機金屬汽相磊晶生長系統 -
Low pressure vapor phase epitaxial growth system
低壓汽相磊晶生長系統 -
Low presure vapor phase epitaxial growth system
低壓汽相磊晶生長系統 -
Vapor phase epitaxial growth system
汽相磊晶生長系統 -
At present the prevailing epitaxial growth techniques of gan are metalorganic chemical vapor deposition ( mocvd ), molecule beam epitaxy ( mbe ) as well as hvpe
目前gan的外延生長技術一般採用有機金屬化學氣相外延法（ mocvd ） ，在藍寶石襯底的（ 0001 ）面上外延生長gan材料，另外還有分子束外延技術（ mbe ）及鹵化物汽相外延技術（ hvpe ）等。 -
We conclude that due to the competition between the surface oxide removal and the ge deposition, geh4 - based clean is not suitable for high quality si epitaxial growth by chemical vapor deposition techniques
同樣，我們證實了當表面氧覆蓋在一定的值以下時，在清洗之後的外延層生長不需要清洗的很好有效表徵。 -
In this paper, the growth technology is presented for epitaxial silicon carbide films on sapphire with a buffer layer by atmospheric - pressure chemical vapor deposition ( apcvd ) process. the effect of temperature and precursors flow rates on the growth of silicon carbide films by chemical vapor deposition is analyzed. the structural properties of the films grown on sapphire compound substrate are studied by x - ray diffraction ( xrd ), x - ray photospectroscopy ( xps ) and photoluminescence spectroscopy
本論文提出了在藍寶石上引入一層緩沖層材料形成復合襯底，採用常壓化學氣相淀積（ apcvd ）方法在其上異質外延生長sic薄膜的技術，分析了cvd法生長sic的物理化學過程，通過實驗提出sic薄膜生長的工藝條件，並通過x射線衍射（ xrd ） 、 x射線光電子能譜（ xps ） 、光致發光譜（ pl譜）和掃描電鏡（ sem ）對外延薄膜的結構性質進行分析。 -
Vapor phase epitaxial growth
汽相外延生長
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