etching structure 中文意思是什麼

etching structure 解釋
浸蝕構造
  • etching : n. 1. 蝕刻法;蝕刻(銅)版畫;蝕鏤術。2. 蝕刻畫,蝕刻版,蝕刻版印刷品。
  • structure : n. 1. 構造,結構;組織;石理,石紋。2. 建造物。3. 【化學】化學結構。4. 【心理學】(直接經驗中顯現的)結構性,整體性;整體結構。adj. -d ,-less adj.
  1. In this paper, the flow pattern defects ( fpds ) were revealed by secco etchant and their shape, distribution on wafer and tip structure were studied in details by optical microscope and atomic force microscope ( afm ). the relationship between etching time and the tip structure of fpds was also discussed. furthermore, by studying the effect of rapid thermal annealing ( rta ) on the density of fpds in ar, the annihilation mechanism of fpds was discussed in this paper

    本文將cz硅單晶片在secco腐蝕液中擇優腐蝕后,用光學顯微鏡和原子力顯微鏡對流動圖形缺陷( flowpatterndefects , fpds )在矽片中的形態、分佈及其端部的微觀結構進行了仔細地觀察和研究,並討論了腐蝕時間對fpds缺陷端部結構的影響;本文還通過研究ar氣氛下快速退火( rapidthermalannealing , rta )對fpds缺陷密度的影響,初步探討了fpds的消除機理。
  2. Because the cross - section of the oversized rib waveguide we fabricated by wet - etching was trapeziform, we analyzed the transmission of oversized rib waveguide by combining effective refractive - index method. the influence of some factors on the optical transmission loss, such as material structure, the height of rib waveguide, and the thickness and refractive index of waveguide layer and up - layer of polymer material, was analyzed

    因為濕法腐蝕工藝製作的反脊波導橫截面是梯形狀的,因此論文中採用了一種簡單有效的方法,即有效折射率法,對梯形反脊波導的光傳輸損耗特性進行了分析,同時考慮金屬電極產生熱場對脊波導傳播特性的影響。
  3. For the algaas / gaas vcsel fabrication, oxide - confined structure provid electrical and optical confinement. algaas / gaas vcsel fabricated by selective oxidation and selective etching

    在vcsel器件研製方面,我們採用氧化物限制結構來對其的電流和光場進行限制。
  4. This paper mainly aims at the strategic demands for large - aperture lightweight mirror proposed by high - tech development. its main research contents are : select material blank for lightweight mirror according to physical and chemical properties of optical glass ; analyze and calculate the deformation quantity of the mirror with finite element method ; design and optimize mirror body structure of 400 lightweight plane mirror and 450 lightweight spherical mirror, analyze glass cutting principle, design specisl - use grinding wheel structure, select reasonable technological parameters to implement the processing of weight reduction holes on 400 plane mirror ; analyze etching mechanism of hydrofluoric acid, look for the technological parameters such as the optimal acid concentration and etching time etc. ; eliminate the stress of weight reduction holes and micro - cracks on 400 lightweight plane mirror ; discuss the processing principle and

    本論文的研究主要是瞄準國家高技術對大口徑輕型鏡的戰略需求而開展的。主要研究內容是:根據光學玻璃的物理與化學性能,選擇輕型鏡坯材料;用有限元法對鏡子的變形進行分析、計算,找出變形規律,優化設計400mm輕型平面鏡、 450mm輕型球面鏡鏡體結構;分析玻璃切削原理,設計專用磨輪結構,選擇合理工藝技術參數,完成400mm平面鏡輕量化減重孔的加工;分析氫氟酸腐蝕光學玻璃機理,尋找最佳酸濃度、腐蝕作用時間等工藝參數,實現400mm平面鏡減重孔應力與微裂紋的消除;討論分離器加工原理和工藝技術特點,完成400mm平面輕型鏡面形加工。
  5. Abstract : in this paper, the design of the sense organ of the silicon miniature inertial meter is presented. the approving structure of the sense organ is fulfilled by the fabrication techniques of laser processing and chemical etching, laser fibre optic vibration is used to test the vibration characteristic of the suspensi on beams

    文摘:設計了硅微型慣性加速度計的敏感頭並應用激光加工和化學蝕刻相結合的工藝方法製造得到了滿意的結構,應用激光光纖測振儀檢測了懸臂梁振動特性。
  6. In this paper, the design of the sense organ of the silicon miniature inertial meter is presented. the approving structure of the sense organ is fulfilled by the fabrication techniques of laser processing and chemical etching, laser fibre optic vibration is used to test the vibration characteristic of the suspensi on beams

    設計了硅微型慣性加速度計的敏感頭並應用激光加工和化學蝕刻相結合的工藝方法製造得到了滿意的結構,應用激光光纖測振儀檢測了懸臂梁振動特性。
  7. According to the working principle of thermo - electrode, we demonstrate the structure of enlarged reflection area and the structure of step broaden waveguide to improve the switch ' s performance and bring down the driving power. according to the fabricating condition of our lab, we proposed simple wet - etching method to fabricate the oversized waveguides and peeling - off method to fabricate the electrode

    針對全內反射和熱電極的作用特點,在全內反射型熱光開關的設計中提出了擴大反射區結構和漸變展寬結構,理論模擬和實驗結果表明該方法能有效地提高了開關性能,降低了驅動功率。
  8. This thesis work has researched the fabrication technics of photonic crystal defect waveguide with air - bridge structure and collecting waveguide ; suggested using uv - lithography and wet etching to fabricate traditional waveguide, after that, using eb - lithography and dry etching to fabricate photonic crystal holes, so can reduce the fabrication cost by a big range ; designed the moulding board, which can fabricate the air - bridge structure and is convenient for recognizing position in eb - lithography ; the structure consisted of traditional waveguides and etching grooves are fabricated on soi successfully, then an successful eb - lithography is realized on the structure, the defect waveguide collected with the traditional waveguide quite well ; used the etching grooves to do the sacrificial layer etching experiment, which grounded etching sacrificial layer by photonic crystal holes in next step

    提出採用紫外光刻工藝製作傳統波導結構之後,通過電子束曝光和干法刻蝕製作光子晶體小孔的工藝方案,大幅度減低了製作成本;設計出可形成空氣橋結構、並且適用於電子束曝光位置識別的光刻模板,在soi材料上成功製作出帶有空氣橋刻蝕預留槽以及接續光波導的結構,在該結構上成功實現了光子晶體帶隙波導的電子束曝光,帶隙波導與接續光波導位置接續良好;最後利用預留槽進行了刻蝕犧牲層的實驗,為下一步利用光子晶體小孔刻蝕犧牲層形成空氣橋結構打下了基礎。
  9. In this project we use etching method x - ray transmission and tem observe and study the form mechanism of cell structure and linear structure ; use sem observe cell structure directly and evaluate effect to the electrical properties of substrate ; at last, use high resolution tem and eds to observe and identify the nature of microdefects

    發現幾乎所有高位錯密度的si - gaas單晶的表層都具有網路狀胞狀結構或系屬結構,首次對該胞狀結構和系屬結構的形成機制進行了研究;直接觀察微缺陷,配合eds (能量色散譜)鑒定si - gaas中微缺陷的物理本質,同時分析其產生原因,討論與位錯的相互作用。
  10. We had fabricated the variable optical attenuator of mmi structure with ridge wave - guide structure and also studied the reactive iron etching of silicon. at last, we tested the variable optical attenuator and draw some conclusions. after testing, we can draw a conclusion that the technology parameter of the device is ideal

    在分析y分支和多模干涉器型( mmi )的光學衰減器結構的基礎上,採用脊形波導結構製作了mmi結構的可變光學衰減器,並對硅的刻蝕技術進行了研究和探討,最後對制得的器件進行了測試研究。
  11. ( 3 ) the free - standing porous silicon films with continuous porous structure were prepared on single crystal silicon wafer by the method of anodic oxidation and electrochemical etching - electropolishing, and firstly used as the anode materials for lithium ion secondary batteries. the capacities of lithium ions storage and the process of charge and discharge of this nano - silicon anode materials as well as the influence of the structure of ps on behavior of storing lithium ions were inspected at length. on the other hand, through the process of charge and discharge in cells, the lithium of light metal element could be electrochemically doped into ps at different doping levels

    胡勁松河北師死大學碩士學位論文( 3 )利用陽極氧化法在單晶硅基底上制備了多孔硅自支撐膜,並首次將這種具有連續多孔結構的硅材料用作了理離子電池的陽極材料,考察了這種納米級硅陽極的儲鉀性能和充放電過程,分析了材料結構對其儲理行為的影響;另一方面,利用這種電池充放電過程在多孔硅中電化學引入了不同點綴程度的輕金屬鉀元素,考察了鉀點綴對多孔硅自身結構,及至性質所帶來的影響,提供了一種通過電化學方法插入埋離子從而連續調整多孔硅發光性質的有效方法。
  12. The structure is shown to achieve extremely low reflectance over a wide field of view and a wide light wave band. in the second section, we analyzed the etching surface

    在衍射光學元件的製作實驗部分,本論文完成的主要工作是進行刻蝕工藝的研究,對離子束刻蝕產生的面形進行了理論的分析。
  13. Firstly, mems fabrication technology was introduced, ant then some general process geometry model, such as base structure created, deposit, etching, photolithography and bond, was built. then the identifiable process data model was got

    本文首先介紹了mems加工技術,並對常用加工工藝:基體創建,沉積,光刻,刻蝕以及鍵合進行幾何建模,得到能夠被三維重構系統識別的數據模型。
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