exciton band 中文意思是什麼

exciton band 解釋
激子[受激]能帶
  • exciton : n. 【物理學】激子。adj. -ic ,-ics n. 〈用作單數〉【物理學】激子學。
  • band : n 1 帶，繩；帶形物；箍；箍條；嵌條；鑲邊；鋸條； 〈pl 〉 （法官等的）寬領帶。2 束縛，羈絆；義務；...
  1. Zinc oxide ( zno ) is a wide band - gap semiconductor, 3. 37 ev at room temperature, with the high exciton binding energy of 60 mev

    Zno是一種寬帶隙半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。
  2. Dongxu zhao ( condensed matter physics ) directed by prof. dezhen shen and prof. yichun liu zinc oxide ( zno ) is a wide band - gap semiconductor ( 3. 37 ev at room temperature ) with the high exciton binding energy of 60 mev

    = zno是一種寬帶隙的半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。
  3. Zinc oxide ( zno ) is an important wide band gap ( eg = 3. 37ev ) semiconductor materials, its exciton binding energy is 60mev. these characters make it is expected to be applied in the ultraviolet optoelectronic devices which can be operated at room temperature

    氧化鋅（ zno ）是一種重要的寬禁帶（ eg = 3 . 37ev ）半導體材料，其激子束縛能高達60mev ，在室溫紫外光電器件方面有巨大的應用潛力。
  4. This direct band - gap material has a large exciton binding energy ( 60mev ), which permits excitonic recombination even at room temperature. thus zno is attracting much attention as promising candidates for optoelectric applications in visible and ultraviolet regions

    它有較高的激子束縛能（常溫下為60mev ） ，使得其在室溫下可以發射紫外激光，因此作為新一代的半導體發光材料受到廣泛關注。
  5. Zno film is a novel - direct compound semiconductor with wide band gap energy of 3. 37ev and a exciton binding energy 60mev at room temperature. due to its the prerequisite for visible or ultraviolet light emission at room temperature, it has the tremendous potential applications for ultraviolet detectors, leds, lds. zno thin film is used widely and effectively in the fields of surface acoustic wave devices, solar cell, gas sensors, varistors and so on because of its excellent piezoelectrical performance

    室溫下禁帶寬度為3 . 37ev ，激子束縛能為60mev ，具備了室溫下發射紫外光的必要條件，在紫外探測器、 led 、 ld等領域有著巨大的發展潛力； zno薄膜以其優良的壓電性能、透明導電性能等使其在太陽能電池、壓電器件、表面聲波器件、氣敏元件等諸多領域得到廣泛應用。
  6. In 1985, takeshi kodama et al. [ 12 ] expressed the wavefunction as the combination of the function of the single electron in a one - dimensional square well with the finite barrier to calculate the binding energies of the exciton. this form does n ' t satisfy the continuity of the function and of its derivative divided by the band - mass

    1985年， takeshikodama等人在計算激子的束縛能時把單電子的波函數（ x ， y ）取為一維有限深方形量子阱中波函數的乘積，這種取法在邊界上不滿足波函數的連續性條件及粒子流（ 1 / m ~ * ） ' （ x ， y ）的守恆條件。
  7. In the photoluminescence ( pl ) spectra, a new emission band due to the exciton - exciton collision process ( p band ) is observed under low excitation intensity at room temperature. and some fine structures origination from the cavity modes of the fabry - p rot etalon could also be seen clearly

    在單根zno微柱（直徑有25 m ）的p帶發光峰上還可以觀察到明顯的f - p腔模式分佈，通過計算得到其腔長為21 m ，同微米柱的尺寸相當。
  8. Nanoparticles show significant quantum - size effect ( such as energy band discreteness, band gap broadening, blue shift in spectra etc. ) as sizes of particles are smaller than bohr radis of exciton of bulk material with same composition ( for example, cds ’ s bohr radium is 6nm )

    當納米粒子的尺寸小於其塊狀材料的激子波爾半徑時（如cds的激子波爾半徑為6nm ） ，能夠表現出明顯的量子尺寸效應（如能帶離散，禁帶變寬，光譜藍移等） 。
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