experiment under high pressure 中文意思是什麼

experiment under high pressure 解釋
高壓實驗
  • experiment : n 實驗;試驗;嘗試 (of) a scientific experiment 科學試驗,科學儀器設備。 a new experiment in ed...
  • under : adv 1 在下,從屬著,服從著。 bring under get under keep under 等〈參看各該動詞條〉。 The ship wen...
  • high : adj 1 高的〈指物,形容人的身高用 tall〉;高處的;高地的。2 高級的,高等的,高位的,重要的。3 高尚...
  • pressure : n 1 壓;按;擠;榨。2 【物理學】壓力,壓強;大氣壓力;電壓。3 精神壓力,政治[經濟、輿論等]壓力。4...
  1. Some conclusions can be drawn from the experiment. first, the discharge coefficient of liquid is almost constant when the pressure before injecting is high enough, but the discharge coefficient of gas fluctuates because of the influence of liquid flowing. second, when the total pressure of gas is low, under the same total pressure, increasing the pressure before injecting or under the same the pressure before injecting, lowing the total pressure of gas make the mean diameter smaller

    流量特性試驗表明,在液體噴注壓降較高時,液體的流量系數基本不變,但是氣體的流量系數受液體流動的影響較大;霧化特性試驗表明,在同一氣體總壓條件下,增大液體噴注壓降或者在相同液體噴注壓降條件下,減小氣體總壓對液滴霧化有利。
  2. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積,得到了含氮量為21at的cn薄膜;研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響,給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因;引入脈沖輝光放電等離子體增強pld的氣相反應,給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑;應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ,得到了含n量為56at的晶態cn薄膜;探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系,證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果;採用光學發射譜技術對cn薄膜生長過程進行了實時診斷,得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律,給出了cn薄膜沉積的主要反應前驅物,揭示了cn薄膜特性和等離子體內反應過程之間的聯系;採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性,揭示了si原子對薄膜生長過程的影響,給出了si基表面碳氮薄膜的生長模式;在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積,證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性,並可顯著提高晶態碳氮材料的生長速率。
  3. And the heat of condensation phase reaction was determined by dsc experiment. the experimental results indicate that the formulae of high content fine ap and coated boron with 20 % ap is of a stable combustion in the air, while having a rate of 2. 94 mm / s under the combustion pressure of 0. 5 m pa

    結果表明:調整ap級配使細粒ap含量增加和用20 ap包覆硼的配方,燃燒穩定,殘雜分散性好,燃速在低壓( 0 . 5mpa )下為2 . 94mm s 。
  4. The impermeability experiment under the conditions of high hydraulic pressure in long time shows that the impermeability grade of acic is further beyond p40 and that the steel slag series of acic is better than the fly ash ones

    高水壓滲透實驗表明中低標號鋼渣防滲抗裂混凝土抗滲標號高於p40 ,優于同摻量粉煤灰混凝土,滿足深水條件下混凝土的抗滲要求。
  5. Based on some a torpedo composite shell under hydrostatic pressure, the engineering design and experiment research for the stability of composite torpedo stiffened shells are carried out under high hydrostatic pressure in the paper. and the manufacture technology of special shaped stiffened thin wall shell is investigated systemically in practice and theory

    本文以某型水雷復合材料耐外壓殼體的研製為背景,對內置加筋異形結構殼體的外壓穩定性進行了理論分析與實驗研究,並對其成型製造技術進行了系統的實驗研究。
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