ferroelectric 中文意思是什麼

ferroelectric 解釋
n. 名詞 ,adj. 形容詞 【物理學】鐵電體（的）；強介質（的）。

  1. Development of the ferroelectric ceramics in recent years has led to superior detection ability.

    近代所發明的鐵電陶瓷具有優良的檢測能力。
  2. Preparation and characterization of pmn - pt relaxation ferroelectric powder by columbite precursor method

    弛豫鐵電體及其表徵
  3. A coplanar waveguide tunable bandpass filter using ferroelectric thin film

    基於共面波導傳輸線的鐵電薄膜可調帶通濾波器
  4. Study on the x7r relaxor ferroelectric composite ceramics

    弛豫復相鐵電陶瓷的研究
  5. Stress corrosion cracking of a batio3 ferroelectric ceramics

    3鐵電陶瓷的應力腐蝕
  6. Advances of sol - gel derivation of pzt ferroelectric thin films

    鐵電薄膜新進展
  7. Ferroelectric properties of optically active polymers

    旋光性聚合物的鐵電性能
  8. Ferroelectric films and ferroelectric random access memory

    鐵電薄膜及鐵電存儲器研究
  9. Preparation and characteristics of ferroelectric cathode

    鐵電陰極制備與性能實驗研究
  10. Effect of interface on properties of pzt ferroelectric thin films

    鐵電薄膜性能的影響
  11. The study of the properties of double - layer ferroelectric film

    雙層鐵電薄膜的性質研究
  12. The lattice dynamics of the ferroelectric semiconductor snte

    的晶格常數及磁性質的影響
  13. A study of indium doped tin oxide as electrode of ferroelectric films

    用作鐵電薄膜電極的研究
  14. Depositing bi4ti3o12 ferroelectric thin films on ito glass substrate

    玻璃襯底上制備鈦酸鉍鐵電薄膜
  15. These results indicate that the phonon - pseudospin interaction should be taken into account for the physics properties in ferroelectric materials

    因此在研究鐵電材料物理性質時聲子的作用是不可忽視的。
  16. Vocabulary for ferroelectric and piezoelectric ceramics

    鐵電壓電陶瓷詞匯
  17. Relaxor ferroelectric single crystals, such as pb ( mg1 / 3nb2 / 3 ) - pbtio3 ( abbreviated as pmnt ) or pb ( zn1 / 3nb2 / 3 ) - pbtio3 ( abbreviated as pznt ), have been reported to exhibit an extremely large piezoelectric constant and excellent electrostrictive properties. such excellent performance makes it fully substitute the traditional piezoelectric ceramics and points to a revolution in ultrasonic transducers, actuators and micro - positioners, making relaxor - based piezocrystals the most promising materials for a broad range of advanced applications. however, it is difficult to grow the high quality single crystals because of the lack of valid thermodynamic data

    新型弛豫鐵電單晶鈮鎂酸鉛（簡稱pmnt ）或鈮鋅酸鉛（簡稱pznt ）是一類新興的功能材料，其在準同型相界附近具有優于傳統壓電陶瓷的較高的壓電常數和電致伸縮系數，可完全代替傳統的壓電陶瓷作為超聲換能器、致動器、微位移器等，使其成為鐵電領域的研究熱點，但如何生長出滿足應用要求的單晶材料卻一直是一個困擾的問題。
  18. 0xl0 - 2 c / cm2k respectively. and the sbn thin film can avoid plumbum pollution of pzt ferroelectric material

    而且， sbn在制備過程中能夠避免pzt等鐵電材料的鉛污染的問題。
  19. Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate

    Pzt的制備方法有很多，其中溶膠?凝膠（ sol - gel ）方法可以和集成電路（ ic ）光刻工藝相互兼容，處理溫度低，有大面積塗敷性能，能精確地控制組分，無需復雜的真空設備，成本低廉，所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜（ ito ）襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射， sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度，結構和電學性能進行了測試。
  20. The electrical properties of yttrium - modified lead zirconate titanate ferroelectric thin films

    釔摻雜鋯鈦酸鉛鐵電薄膜的電性能研究
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