field effect mobility 中文意思是什麼

field effect mobility 解釋
場效應遷移率
  • field : n 菲爾德〈姓氏〉。n 1 原野，曠野；（海、空、冰雪等的）茫茫一片。2 田地，牧場；割草場；〈pl 〉〈集...
  • effect : n 1 結果。2 效能，效果，效力，效應，作用，功效；影響。3 感觸，印象；外觀，現象。4 旨趣，意義。5 ...
  • mobility : n 1 可動性，活動性，能動性。2 靈活性，可變動性。3 【物理學】動性，遷移率；【化學】淌度；【軍事】...
  1. Comparing to a - si tft, p - si tft has the merits such as high field effect mobility, high integration and high speed, high definition display, n channel and p channel capability, low power consumption and self - aligned structures. with these good characteristics, p - si tft lcd could provide brighter and stable image

    相對于a - sitft ， poly - sitft有其明顯的優勢:高遷移率、高速高集成化、 p型和n型導電模式、自對準結構以及耗電省、解析度高等優點，能夠提供更亮、更精細的畫面。
  2. The effect of interface state charges on the threshold voltage, drain current, transconductance and field - effect mobility of n - channel sic mosfet is analyzed with numerical method by establishing the model of the interface state density exponential distribution

    建立界面態密度的指數分佈模型，用數值方法較為詳細的分析了界面態電荷對n溝mosfet器件閾值，漏電流，跨導和場效應遷移率的影響。
  3. The study shows that interface state charges not only increase the threshold voltage, but also lower the mosfet transconductance, drain current and field - effect mobility, which can well explain the results of experiment

    分析結果顯示界面態電荷不僅使閾值電壓增大，而且還會導致器件漏電流減小，跨導和場效應遷移率降低，模擬結果能對實驗現象做出很好的解釋。
  4. It is pointed that inversion - layer mobility is different from field - effect mobility for sic mosfet. and a relationship has been established between the ratio of the experimentally - determined field - effect mobility to the actual inversion - layer carrier mobility and interface states

    明確指出碳化硅器件的反型層遷移率和實驗測定的場效應遷移率不能等同，並給出了以上二者的比值與界面態密度的定量關系。
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