field effect transistor 中文意思是什麼

field effect transistor 解釋
【無線電】場效果晶體管。

  • field : n 菲爾德〈姓氏〉。n 1 原野，曠野；（海、空、冰雪等的）茫茫一片。2 田地，牧場；割草場；〈pl 〉〈集...
  • effect : n 1 結果。2 效能，效果，效力，效應，作用，功效；影響。3 感觸，印象；外觀，現象。4 旨趣，意義。5 ...
  • transistor : n. 【無線電】晶體（三極）管；晶體管[半導體]收音機。 a transistor radio 晶體管[半導體]收音機。
  1. Algan gan heterostructure field effect transistor materials grown by molecular beam epitaxy

    生長的跨導為186
  2. To achieve the high impedance required specially designed "electrometer" vacuum tubes, field effect transistor must be used in the input stage.

    為適應高阻抗需要，儀器輸入電路中須用特殊設計的靜電計專用電子管、場效應晶體管。
  3. Metal semiconductor field effect transistor mesfet

    金屬半導體場效應管
  4. Bigfet bipolar isolated - gate field effect transistor

    雙極型絕緣柵
  5. Modulation doped field effect transistor modfet

    調制雜場效應管
  6. Jfet junction type field effect transistor

    結型場效應晶體管
  7. Carbon nanotube field effect transistor

    電界?果
  8. Fet field effect transistor

    場效應晶體管
  9. Field effect transistor

    場效應電晶體
  10. The key parts of barretter are made of irf840 field - effect transistor, the magnetic ring and high frequency choking coil which adopting negative temperature index. such components can provide barretters a wide applicable voltage 160v - 250v. low power consumption, minor temperature rise, stable functions, long life - span

    鎮流器核心元件採用irf840場效應三極體，磁環及高頻扼流圈採用負溫系數，這樣的元件選擇使整流器適用電壓范圍寬160v - 250v ，功耗低，溫升小，性能十分穩定，確保其擁有很長的壽命。
  11. Rapid screening test methods for thermal sensitive parameter of mos field effect transistor

    Mos場效應晶體管熱敏參數快速篩選試驗方法
  12. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs146

    半導體分立器件. cs146型硅n溝道耗盡型場效應晶體管.詳細規范
  13. Semiconductor discrete device. detail specification for type cs141 silicon n - channel mos deplition mode field - effect transistor

    半導體分立器件. cs141型硅n溝道mos耗盡型場效應晶體管詳細規范
  14. Semiconductor discrete device. detail specification for type cs140 silicon n - channel mos deplition mode field - effect transistor

    半導體分立器件. cs140型硅n溝道mos耗盡型場效應晶體管.詳細規范
  15. Semiconductor discrete device. detail specification for type cs5114 cs5116 silicon p - channel deplition mode field - effect transistor

    半導體分立器件. cs5114 cs5116型硅p溝道耗盡型場效應晶體管詳細規范
  16. Semiconductor discrete device. detail specification for type cs4091 cs4093 silicon n - channel deplition mode field - effect transistor

    半導體分立器件. cs4091 cs4093型硅n溝道耗盡型場效應晶體管詳細規范
  17. Semiconductor discrete device. detail specification for types cs4856 cs4861 silicon n - channel deplition mode field - effect transistor

    半導體分立器件. cs4856 cs4861型硅n溝道耗盡型場效應晶體管詳細規范
  18. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs1 gp, gt and gct classes

    半導體分立器件gp gt和gct級cs1型硅n溝道耗盡型場效應晶體管.詳細規范
  19. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs4. gp, gt and gct classes

    半導體分立器件gp gt和gct級cs4型硅n溝道耗盡型場效應晶體管.詳細規范
  20. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs10. gp, gt and gct classes

    半導體分立器件gp gt和gct級cs10型硅n溝道耗盡型場效應晶體管.詳細規范
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