field oxide 中文意思是什麼
field oxide
解釋
場氧化層-
Studies of photoelectric property about nanocomposite oxide with sno2 and a - fe2o3 using sol - gel method we prepared nanocomposite oxide with sno2 and a - fe2o3, we analyzed it ' s property with xrd uv spectra surface photo voltage spectra ( sps ) and field induced surface photovoltage spectra ( fisps )
一fez仇復合氧化物納米粒子，並用xrd 、紫外可見吸收光譜、表面光電壓譜（ sps ）以及場誘導表面光電壓譜（ fisps ）進行了分析和表徵。 -
This voltage creates a field across the gate oxide, which causes the adjacent p substrate to invert to n-type.
這一電壓在柵極氧化物層上產生一個電場，它導致毗鄰的P型襯底轉變成N型。 -
The xrd results confirmed that the nanocomposite oxide has two kinds of material with sno2 and a - fe2o3 ; the uv spectra has more variety with the proportion changing of the two kinds oxide ; the fisps indicated that photoelectric property increased with the adding positive electricity field, and the biggest strength could reach 50 ~ 60 times. with an increment for negative electricity field, the photoelectric property reduced largely
Xrd結果證實了所制備的納米粒子為兩種材料的復合氧化物;紫外可見吸收隨兩種氧化物復合比例的改變有較大的變化; fisps表明復合材料的光伏響應強度隨所加正電場的增加而增加，最大強度可增加50 ~ 60倍，隨所加負電場的增加而大大減弱。 -
Based on sndm technique, a method of local capacitance - voltage characteristic characterization of ferroelectric thin films was proposed. the effect of traps at oxide - semiconductor interface on metal - oxide - semiconductor structure capacitance - voltage curve was discussed, and the influence of coercive field to the capacitance - voltage characteristics of ferroelectric thin films was also discussed. the dynamic switching of ferroelectric domain in ca doping ( pb, la ) tio3 thin film was studied by sndm from the view of electricity
利用sndm ，從純電學的角度觀察了plct薄膜中的電疇動態反轉過程，由電疇橫向擴張的移動速度的降低，發現了晶界在電疇反轉過程中對疇壁移動的阻擋作用;根據sndm和pfm的在垂直方向上的不同信息敏感深度，得到plct薄膜中電疇反轉過程中電疇是楔形疇;用pfm觀察同一電疇在去掉外加反轉電場后電疇的極化弛豫現象，結果表明空間電荷是發生極化弛豫的主要原因。 -
They should remove the field plate and oxide and deposit a thin aluminum film over this region.
他們應當去掉場極板和氧化層，並在整個區域淀積一層薄的鋁薄膜。 -
Charge qs was located near the interface of silicon and oxide. with more charge, the field of buried oxide was improved up to the critical breakdown field basis on entirely continuity of electric displacement vector, and then the vertical breakdown voltage was raised. the comparisons between analytical and simulative results proved its availability of this model to interpret the vertical blocking mechanism
該模型認為，將界面電荷qs引入i層si / sio2的si界面，根據電位移矢量的全連續性，界面電荷qs越多，使i層內電場增加，直至sio2的臨界電場，從而提高縱向擊穿電壓vb . v ，很好得解決了器件的縱向耐壓問題。 -
Discrete semiconductor devices - metal - oxide semiconductor field - effect transistors mosfets for power switching applications
半導體分立器件.電力開關設備的金屬氧化物半導體場效應晶體管 -
Mosfets discrete semiconductor devices - part 8 - 4 : metal - oxide - semiconductor field - effect transistors mosfets for power switching applications
半導體分立器件.第8 - 4部分:電力開關裝置用金屬氧化物半導體場效應晶體管 -
The correlation between the calculated electron energy in the oxide and the electric field in the silicon substrate indicates that the difference between hot electron injection and the fn tunneling can be explained in terms of the average electron energy in the oxide
通過計算注入到氧化層中的電子能量和硅襯底的電場的關系表明，熱電子注入和fn隧穿的不同可以用氧化層中電子的平均能量來解釋。 -
The main work can be summed up as follows : firstly, we studied the thermal - field properties of vcsels, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of vcsels, and then studied the influences of the oxide - confining region with different position or thickness, and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. thirdly, we realized the coupling of electricity, optical and thermal - fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, fermi levels and optical - field
具體工作可以概括如下：首先，研究了vcsel的熱場特性，分析了電流擴展，材料參數和工作條件對于溫度分佈的影響；其次，從電極電壓入手，計算出激光器中的等勢線分佈，並對不同深度處的電壓和電流分佈進行比較，研究了高阻區的不同位置和不同厚度、限制層和出射窗口半徑的大小對電流密度、載流子濃度和溫度分佈的影響；再次，實現了電、光、熱耦合，求出了閾值電壓，計算了不同偏置電壓下的電流密度分佈、載流子濃度分佈和熱場分佈，分析了溫度和載流子濃度變化對折射率、費米能級和光場的影響；最後，給出了考慮n - dbr和雙氧化限制層時激光器中的等勢線分佈，分析了n - dbr和雙氧化限制層對vcsel電流密度、載流子濃度、溫度和光場分佈的影響。 -
The result of experiment showed that the reaction between ti and c is a thermodynamic course, when 2 wt % mg is added to melt, it can restrain the formation of fragility phase al3ti, and gained al matrix composite which contained tic reinforced particles only. because mg reacts with the forms a micro - high temperature field around the oxide around the graphite particles and the oxygen gas which is brought by the immersion bell, and the reaction gives out a lot of heat energy, thus forms many high micro - fields in melt, which prompt the reaction between the al and ti
加入適量的mg （ 2wt ）可以抑制tic al復合材料中的脆性相al _ 3ti的產生，生成僅含tic的鋁基復合材料；由於活化劑鎂在體系中與石墨顆粒周圍的氧化物、以及外來的氧反應放熱，在熔體中形成微高溫區，促進al - ti反應，同時， al - ti反應也是放熱反應，因此體系中的內能急劇增大，促使al _ 3ti分解以及ti朝c顆粒擴散，縮短反應的孕育時間。 -
Zinc oxide, zno, a wide direct - gap semiconductor, attracts as much attention as gan in photoelectric research field
Zno ，作為一種直接帶隙寬禁帶半導體材料，是繼gan之後光電研究領域又一熱門的研究課題。 -
With the finite - difference method, self - consistent solutions for the possion ' s equation, injected current density, carrier concentration, optical field and thermal conduction equations have been realized to study the thermal - field properties, the coupling of electricity, thermal and optical - fields, and the influences of n - dbr and double oxide - confining regions on the characteristics of vcsels
本文建立了一個直接耦合的準三維理論模型，通過有限差分法求解泊松方程、載流子擴散方程、熱傳導方程和光場方程的自洽解，研究了vcsel的熱場分佈特性，並實現了電、熱和光場的耦合，同時考慮了n - dbr及雙氧化限制層對vcsel特性的影響。 -
Effect of static magnetic field on the expression of nitric oxide synthase in human umbilical vein en - dothelial cells
恆磁場對人臍靜脈內皮細胞一氧化氮合酶活性的影響 -
The field emission characteristics of zinc oxide nanowires grown on the tungsten tips and the influence of heat treatment on their field emission properties were discussed in the thesis
本文討論了鎢針尖上生長的氧化鋅納米線的場發射特性並重點分析了熱處理對其場發射特性的影響。 -
Oxide crystal is a important kind of crystals, oxide crystal is almost used in every field of technology and industry because of character in electricity optics and mechanism
氧化物晶體是晶體家族中的重要分支，由於其具有優良的光學、電學和機械性能，被廣泛應用於科學技術和工業的各個領域。 -
Transistor based technology, high power mosfet is used for the vibration element mosfet : metal - oxide semiconductor field effect transistor
三，主要功能特點：全部採用晶體管，振蕩元件採用大功率mosfet場效應管。 -
There are three power transistor which have been widely used in s band now : bipolar junction transistor ( bjt ), gaas metal - oxide semiconductor field effect transistor ( gaas mosfet ) and lateral diffuse metal - oxide semiconductor field effect transistor ( ldmos fet ). thanks to the advantages, such as, wide frequency, easy power supply, good stability, the ldmos fet has used in the motion telecommunication
目前在s波段人們常用的放大器有雙極性晶體管（ bjt ） 、砷化鎵場效應晶體管（ gaasmosfet ） 、邊緣擴散場效應晶體管（ ldmosfet ）等，由於ldmosfet具有頻帶寬、供電方便、穩定可靠等優勢，目前已經廣泛用於移動通信3g的研究。 -
Well, cmos complementary metal - oxide semiconductor chips use metal - oxide semiconductor field effect transistors mosfets. these are fundamentally different from bipolar transistors
哦， cmos （互補金屬氧化物半導體）晶元使用金屬氧化物半導體場效應晶體管（ mosfet ） ，顯然它是一種fei （場效應晶體管） 。 -
Zinc oxide is a kind of excellent multi - functional semiconductor materials, zinc oxide nanowires have a lot of new optical and electronic characteristics, and one of its functions in the electronic frontier is worked as field emission electron source
氧化鋅是一種非常優異的多功能半導體材料，氧化鋅納米線具有很多新穎的光學與電學特性，它在電子學領域的用途之一是作為場發射電子源。
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