film stack 中文意思是什麼
film stack
解釋
薄膜迭存儲器-
In this paper, we design a new film stack by use of multi - frequency design idea, which decrease the film thickness of high refraction layers greatly, and the damage threshold of it will be improved hopefully. and at the base of this film stack, by optimizing the film thickness of several outmost layers, we design the hr film at 45 incidence for 632. 8nm and 1315nm with 180 ? or 90 phase retardance at 1315nm
隨著高功率coil輸出功率的進一步提高，傳統的設計膜系已逐漸不能滿足需要，為此我們利用倍頻的沒計思想，設計出了一種新的高反射膜系，與傳統的設計膜系相比，此膜系大大降低了高折射率層的厚度，使得膜系的損傷閩值有望得到極大提高。 -
It is also found that replacement of substrate and adjustment of film stack structure would lead to the change of drift, this will enhance the temperature stability of filter
同時經過計算分析發現通過更換膜系基板和調整膜系結構可以改變濾光片中心波長的漂移，這個結果有助於提高濾光片的溫度穩定性。 -
In order to control the polarization characteristics, the phase retardance mirror must be used. additionally, in order to suppress the reverse wave in ring resonator, the phase retardance mirror must also be used to preserve the polarization characteristics of the reflected reverse wave by suppressor. the conventional film stack ca n ' t satisfy the high power coil development requirement
另外，通過對高功率coil用環行非穩腔內倒向波抑制的分析表明，為實現倒向波的抑制，倒向波被反饋到腔內正向波中的部分必須保持偏振狀態不變，否則，起不到倒向波抑制的作用，這也需要用到高反射位相延遲鏡。 -
The quartenvave film stack based on one dimensional photonic crystal technology is designed. the measurement of the ir band is relatively mutual while that of mmw band is lack of report. the reflectivity of ir area ( 3 - 5 m ) by fourier transform infrared spectrometer ( ft - ir ) is given, and the experimental data of mmw band in microwave network analysis is also given
本文給出了直接在傅立葉紅外光譜儀中進行的紅外波段透射率（實際是反射率）測量結果，在毫米波波段，通過自行設計的測試方法與測試系統，給出了在hp8510矢量網路分析儀下測得的未鍍膜、鍍膜樣品的比對測試結果。 -
The transfer of the carrier in photoconductor is anisotropy owing to the column structure of the film is anisotropy. on the basis of the new concept suggested in this paper, the maximum diffusion length in the lateral direction of the photo - carrier in the photoconductor ( which is related to the resolution of lclv directly ) as function of conductivities of both in lateral and normal directions in the film can be obtained as the expression as following. the nc - si / a - si : h photoconductor of lclv deposited and crystallized at low temperature of exactly 250 c stack column structure by al inducing a - si : h
本文根據柱狀結構存在各向異性的特點，並根據半導體物理知識，推出光導層光生載流子橫向最大擴散長度（該擴散長度與液晶光閥光導層解析度直接相關）與薄膜橫向和縱向電導率關系的表達式為：由於a - si ： h在al金屬的誘導作用下在不高於250的溫度下即開始晶化，本文對用金屬al誘導非晶硅晶化制備的nc - si a - si ： h薄膜進行研究。
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