flux growth 中文意思是什麼
flux growth
解釋
熔鹽生長-
On the basis of the improvement on the crystal growth furnace, the new nlo crystal k2al2b2o7 ( kabo ) has been grown by the top - seeding flux method
在對爐體改進的基礎上，用頂部籽晶法生長新型紫外非線性光學晶體k _ 2al _ 2b _ 2o _ 7 （ kabo ） 。 -
Several flux systems have been studied, especially about the mixed flux system. we found that the use of mixed systems such as k2co3 - b2o3 - naf had greatly decreased the viscosity of the melt, decreased the saturation point and improved the growth quality of the crystal. the flux system naf - b2o3 is favour of decreasing the volatilization and the saturation point of the melt
對kabo晶體的幾種助溶劑體系尤其對復合助溶劑體系進行了研究，我們發現復合助溶劑體系如： k _ 2co _ 3 - b _ 2o _ 3 - naf有利於減小熔體粘度，降低飽和點溫度，改善晶體的生長性能； naf - b _ 2o _ 3體系有利於降低熔體揮發性和飽和點溫度。 -
In this paper, pure and doped ktp crystals were grown from the flux using a top - seeded method, and special technique have been used to lower the electrical conductivity to three orders of magnitude than common flux ktp, the values is up to 10 - 10 ( cm ) - 1, this overcame the shortcoming that common flux ktp cannot be used in e - o application field because of having higher electrical conductivity. the growth condition, doped elements and annealing technology were investigated. single crystals of ktp with high quality and big z - cut cross section were obtained by optimizing the parameter of crystal growth
本實驗採用頂部籽晶熔劑法生長了純的以及不同摻雜的ktp晶體，用特殊工藝處理技術將普通熔劑法ktp的電導率降低了三個數量級，達到了10 ~ （ - 10 ） （ cm ） ~ （ - 1 ） ，解決了普通熔劑法ktp晶體由於離子電導率太大而無法用於電光應用領域的困難；對ktp晶體的生長條件、摻雜元素以及退火工藝等進行了研究，通過優化生長工藝技術參數，突破了工藝技術生長難關，得到了高光學均勻性、具有大z切面的ktp單晶。 -
The following aspects are involved in this dissertation : 1 ) properties of convergence of the network model under the circumstance of few rooms, the prediction of the early production tally with the growth of the fire in building on the whole while the prediction becomes most fallacious when the rooms increase to a certain number, for instance, 9. the solution of the net mass flux, positive mass flux and negative mass flux is improved and then mass conservation is strictly maintained so that the prediction of the software become more credible and reliable
本文主要涉及以下幾個方面: 1 ）軟體計算收斂性態在房間數目很少的情況下，軟體開發的前期成果能在總體上成功預測建築火災的發展過程，當房間數目增加到一定的數目（如9 ） ，軟體計算將出現劇烈振蕩的問題，預測結果極不理想。本文改進了軟體對凈質量流量、正、負質量流量的求解，保證了三者之間的嚴格守恆關系。經過改進，軟體的預測結果更可靠，更可信。 -
We studied the factor that influence the quality of gaas, algaas and ingaas by mbe, and studied the growth temperature, growth time and the flux ratio of v - iii beam
研究了影響mbe生長gaas 、 algaas和ingaas等單晶材料質量的一些因素，對mbe生長溫度、生長時間和生長時的-族束流比進行了研究。 -
These defects in crystal can be explained by the instability of the growth and cooling, etc. another factor is the high viscosity in this system, xrd indicated that most of the inclusion was flux
通過對晶體表面缺陷的觀察與分析認為，晶體裂縫、生長丘、生長臺階及包裹物等缺陷與生長條件和工藝密切相關。 -
We have studied the influence of growth parameters of buffer layer under large flux of reactant materials and found that parameters such as v / ratio, growth temperature and ammonia flux during annealing have evident influences on the growth of buffer layer, while other parameters like growth pressure, pressure during annealing and ramping rate show little influence
在大源流量流下，研究了gan緩沖層各生長參數的影響規律，發現對緩沖層生長影響顯著的條件有生長比、生長溫度、退火時的氨氣流量。而緩沖層生長壓力、退火壓力及退火時間的影響相對較小。 -
In experiments carried out under small reactant source flux, it was found that parameters such as v / ratio, growth pressure, thickness of buffer layer, ammonia flux during annealing and ramping rate have strong influence on the growth of buffer layer, while the influence of tmga flux and pressure during annealing can be omitted
在小反應源氣流下，發現對緩沖層生長影響顯著的條件包括生長比，生長壓力，緩沖層厚度，退火時氨氣流量及退火速率。而ga源流量，退火壓力及的影響相對較小。
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