formation voltage 中文意思是什麼
formation voltage
解釋
化成電壓-
The factor which is most detrimental to the formation of the null voltage is the capacitive coupling between the primary and secondary coils.
對形成零電壓最有害的因素是初線圈和次級線圈之間的電容耦合。 -
A lot of experiments have been done in the process of exploiture soft packaging li - ion battery about how to choice the rational arts and crafts. the content include : how to deal with the collector, add how much pvdf in the material, how long the material need to stirring and the right viscidity, how much condubtivity agent the electrode need, what theckness is best, choice different collectors, the degree of dryness of the electrode, theckness of pressed model, how much electrolyte will be added, placement how long after added the electrolyte, system of formation how to influnce the battery, in formation the battery need or not need preesure from outside, how to vacuumize and the optimize matching positive pole and negative pole. with these practice make sure the parameter of the positive pole should less than 90 m ; according to different vacuumize order the conduc - tivity agent in anode will be 5mass % and 9mass %, respectively, and in cathode the data is 2mass % ; every 100mah added to 0. 4 ml electrolyte ; before formation the battery should be placement 8 hours and the system of formation must be less than 0. 01c before the voltage reach to 3. 0v ; should press in outside when battery in formation ; to these batteries which capacity more than 350mah the vacuum time not excess 15s ; the optimize matching positive pole and negative pole between 2. 10 : 1 and 2. 15 : 1. finally make out the battery which cycling performance and security are all very well
液態軟包裝鋰離子電池的研究主要是對關鍵工藝進行了優化設計，具體包括:集流體的處理、 pvdf的加入量、漿料攪拌時間和粘度、導電劑的加入量、電極膜的厚度、不同集流體的選擇、電極膜的乾燥程度、壓型的厚度、電解液的加入量、注入電解液后靜置時間的長短、化成制度的影響、化成時電池所具有的壓力影響、抽真空的處理、正負極活性物質的匹配。最後確定出液態軟包裝鋰離子電池最佳工藝參數:正極膜的厚度小於90 m ;根據化成時不同抽真空順序，確定正極膜中的導電劑的加入量分別為5mass %和9mass % ;負極膜中導電劑的加入量為2mass % ;電解液的加入量為每100mah添加0 . 4ml ;化成前電池的靜置時間應當大於8h ;電池在3 . 0v之前採用小於0 . 01c的化成制度;在化成過程中應當施加一定的外部壓力;對於350mah的電池抽真空的延時不應大於15s ;而正負極活性物質的質量比應當在2 . 1 : 1 2 . 15 : 1之間。 -
1 successively depositing cbn thin films on si substrates which reaches international advanced level, the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied. boron nitride ( bn ) films were deposited on ( 100 ) - oriented p - type silicon substrate ( 8i sqcm ) with rf sputtering system. the target was hexagonal boron nitride ( hbn ) of 4n purity, and the working gas was the mixture of nitrogen and argon
研究了襯底負偏壓和射頻功率對制備立方氮化硼薄膜的影響立方氮化硼薄膜沉積在p型si （ 100 ） （ 8 15 cm ）襯底上，靶材為h - bn靶（純度達99 . 99 ） ，濺射氣體為氬氣和氮氣混合而成，制樣過程中，襯底加直流負偏壓。 -
In general, delayed or distorted pulses, excessive plateau slope, raised working voltage, or failure to count at all are likely results of negative ion formation.
一般說來，延遲或畸變脈、過度的坪斜、工作電壓的升高和不能計數，都可能是負離子形成的結果。 -
With the development of doping technology, the formation of the base region in high - voltage transistor can be made by b diffusion technology, b - a1 paste - layer diffusion technology, close - tube ga - diffusion technology and open - tube gallium - diffusion technology
隨著摻雜工藝的不斷發展，高反壓晶體管基區的形成經歷了擴硼工藝、硼鋁塗層擴散工藝、閉管擴鎵工藝到開管擴鎵工藝的發展。 -
Heating cables with a rated voltage of 300 500 v for comfort heating and prevention of ice formation
取暖設備和防結冰用額定電壓為300 500v的加熱電纜 -
High voltage shunt capacitor installation is applied to ac power system with 50hz for raising power factor, adjusting voltage of power grid, reducing transmission loss and raising the efficiency of transmission trans - formation facilities, so as to improve the quality of po - wer supply
高壓並聯電容器成套裝置適用於工頻輸配電系統中，用以提高功率因數，調整電網電壓，降低線路損耗，充分發揮設備效率，改善供電質量。 -
Constant stator magnetic linkage control frequency converter includes power devices utilizing igbt, drive circuit using three - phase drive ic with multiple protection functions. pwm signal formation circuit in the way of voltage space vector control and realized with pld ( programmable logic device ) devices and compensation for the influence of supply voltage variation and stator resistance voltage drop
其中，恆定子磁鏈控制變頻器的設計中主電路採用功率器件igbt ；驅動電路採用三相多功能集成驅動晶元； pwm脈寬調制信號產生電路採用電壓空間矢量控制方式，由pld器件實現；對電源電壓變化及電阻壓降造成的影響進行了補償。 -
Beijing, china, december 18, 2006 - schneider electric ( euronext : schn ) signed an agreement with delixi group for the formation of a joint venture dedicated to the manufacturing, marketing and distribution of low voltage products
北京12月18日消息? ?施耐德電氣與德力西集團簽署合作協議，成立合資公司，致力於生產、推廣和銷售低壓產品。 -
Since the concept of superlattice was proposed, vertical transport in superlattice has been investigated widely. the electric field domains and current self - oscillations which result from sequential resonant tunneling between different subbands of the superlattice are very significant phenomena. such kind of oscillation can be uesd to make tunable microwave oscillaors. in this thesis, low temperature transport problem, especially the formation of field domain and the condition of current self - oscillations in doped gaas / alas superlattice with weak coupling are investigated thoroughly and also by combining the macroscopic model with the microscopic one., the voltage - current characteristic and the current oscillation are simulated. the calculated result is nearly consistent with the experimental data
由超晶格中子能級之間的順序多阱共振隧穿引起的電場疇及電流自維持振蕩現象是其中的一個非常有意義的分支，該現象可用來製作電壓調諧微波振蕩器。本論文對弱耦合摻雜gaaa alas超晶格中的縱向輸運特別是針對低溫下的場疇的形成和固定偏壓下電流自維持振蕩產生的條件進行了深入的探討，並結合宏觀模型和微觀模型對超晶格在時變電壓作用下的電壓-電流特性以及固定偏壓作用下的電流特性進行了模擬計算。 -
This paper implements differential formation of quasilinear differential equations, furthermore lumped equivalent circuit mode at boundary and constraints between voltage and current have been incorporated to find boundary conditions. because partial differential equations can transform into ordinary differential equations, it transforms telegraph equations into ordinary differential equations
本文根據偏微分數值解理論應用一階擬線性方程的差分格式，並根據電壓、電流在始端、終端上的約束關系，運用傳輸線集中參數的等效模型確定邊界條件；最後模擬計算得到響應波形。 -
The induced formation and motion of copper steps on the surface of cu covered with glycine occur in the area where has been scanned by scanning tunneling microscope with higher negative bias voltage v
2 . 5v的條件下使用掃描隧道顯微鏡stm掃描吸附有甘氨酸的cu 111表面，在掃描區域內原有銅臺階的形狀發生了變化並產生了新的銅臺階。 -
The results show that, the capacitance of aluminum foils is increased at the different rated formation voltage, the forming time become so little that the power was mostly saved, but the withstanding voltages of the dipping foils become lower. the dipping time and the annealing temperature are the key factors influencing the capacitance of aluminum foils fabricated by sol - gel technology. 2
結果表明: sol - gel技術在鋁腐蝕箔表面成功制備出了高介電常數的al - ti復合氧化膜;經tio2溶膠處理過的鋁腐蝕箔陽極氧化后，復合氧化膜使不同陽極氧化電壓下的化成箔比容均有不同程度的提高，而且陽極氧化過程變短，節約了電能;但是耐電壓特性變差。
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