gallium nitride 中文意思是什麼
-
C - plane sapphire substrate for opto - electronic applications as nitride based led is one of the latest additions to our sapphire product line. over the years, sapphire has proven to be a reliable base substrate to grow gallium nitride epitaxial film for high brightness led
C -軸切型的藍寶石是近年來應用在生長氮化鎵藍光led重要的基材。兆晶科技新近增加此產品以因應光電業者殷切的需求。 -
This work was supported by the state science and technology ministry of p. r. china under the contact no. g20000683 - 06, and by the national natural science foundation of p. r. china under grant no. 60046001. gallium nitride is one of the 3rd generation semiconductor materials. from 1990 ' s, gan has attracted more and more attention and advanced rapidly, mainly due to its direct transition, wide band gap ( ~ 3. 4ev ) and other excellent characters
Gan是直接躍遷的寬帶隙材料，具有禁帶寬度大（ 3 . 4ev ，遠大於si的1 . 12ev ，也大於sic的3 . 0ev ） ，電子漂移飽和速度高，介電常數小，導熱性能好等特點，在光電子器件和電子器件領域有著廣泛的應用前景。 -
Synthesis and luminescence of gallium nitride led blue light conversion materials
氮化鎵發光二級管藍光轉換材料的合成和發光性質 -
Jelenski, a. " gallium nitride - new material for microwave and optoelectronics.
"氮化鎵-微波與光電元件的新材料. -
They are confident of this thanks to the development of a compound, gallium nitride, that can be used instead of the more conventional sapphire, thereby halving the cost of the leds
小組成員對此極有信心，因為他們開發了一種氮化鎵的化合物，取代更多的傳統青玉，從而使發光二極體成本縮減一半。 -
A simple route for the synthesis of unique 1d nanostructures, including brush - like gallium nitride nanostructure, oriented amorphous silicon nanowires and in @ sio2 nanocables, was developed on the basis of vls and sls mechanisms
藉由vls與sls機制，我們成功地合成出具有特殊方向性的刷狀氮化鎵奈米晶體、非晶相二氧化矽奈米線，及二氧化矽包覆銦之一維奈米結構。 -
This work was supported by the state science and technology ministry of the p. r. china under the contact no. g20000683 - 06, and by the national natural science foundation of p. r. china under grant no. 60046001. recently, gallium nitride ( gan ) as a wide band gap semiconductor has attracted more and more attention and advanced rapidly, mainly due to its promising applications in short - wave light - emitting devices, photodetectors, as well as anti - radiation, high frequency and high power electronic devices
本碩士論文是基於國家科技部重點基礎研究發展規劃項目（ 973項目）子課題「硅基寬帶隙異質結構材料生長及器件研究」 （ 2000年10月- 2005年9月， no . g20000683 - 06 ）和國家自然科學基金（ no . 60046001 ）的一部分研究工作。 -
Due to its intrinsic merits, such as wide band gap, high electron saturated drift velocity, high melting point, good coefficient of thermal conductivity, anti - radiation and good chemical stability, gallium nitride as a direct band gap semiconductor has become the promising material for the application of short - wave light - emitting devices and high temperature, high frequency and high power electronic devices
Gan是直接帶隙半導體材料，以其禁帶寬度大、電子飽和漂移速度大、熔點高、熱導率高、抗輻射能力強和化學穩定性好等優點成為製造短波長光發射器件及高溫、高頻、大功率電子器件的理想材料。
分享友人