gap-conductivity 中文意思是什麼

gap-conductivity 解釋
空穴電導率
  • gap : n 1 （墻壁、籬笆等的）裂口，裂縫；豁口，缺口。 【軍事】突破口。2 （意見的）齟齬，分歧；隔閡，距離...
  • conductivity : n. 【物理學】傳導性[力]，傳導率；導電率[性，系數]。
  1. Characterized by wide band gap, high breakage electric field, high thermal conductivity, high saturated electron mobility, cubic silicon carbide ( 3c - sic ), considered as one of the most promising wide band gap semiconductors, is widely utilized in high temperature, high frequency and large power semiconductor devices

    3c - sic被譽為最有潛力的寬禁帶半導體材料，具有帶隙寬、臨界擊穿電場高、熱導率高、飽和電子漂移速度大等優點，是高溫、高頻、高功率半導體器件的首選材料。
  2. All analysis and simulations results indicate several methods improving the insulation recovery of spark gap switch : ( 1 ) using the gas with good thermal conductivity, such as h2 and sf6 ; ( 2 ) using the gas flow ; ( 3 ) utilizing the v / p cure ; ( 4 ) modifying the geometry and size of the electrode ; ( 5 ) using the gas with good electronegativity, such as sf6. some experiments on the multi - pulse operation of high power spark gap switch are carried out. the insulation recoveries of switch without and with gas flow are both investigated

    結合理論分析和模擬結果，提出了氣體火花開關多脈沖運行特性可採用如下方法: （ 1 ）使用導熱性能好的氣體，如h2 、 sf6等; （ 2 ）採用吹氣的方法; （ 3 ）增大氣壓，在電極表面增加細小結構，構造平穩的v / p曲線; （ 4 ）改良開關電極結構和尺寸，採用奶頭-半球結構的電極; （ 5 ）使用電負性強的氣體作為開關絕緣氣體，如sf6 。
  3. Silicon carbide is becoming the most promising semiconductor material for high temperature, high frequency and high power devices because of its superior properties such as wide band gap, high breakdown field, high electronics saturation drift velocity, and high thermal conductivity

    Sic材料由於具有寬禁帶、高臨界擊穿電場、高飽和電子漂移速度、較大的熱導率等優良特性，因此成為製作高溫、高頻、大功率器件的理想半導體材料。
  4. Due to good chemical stability and electrical resistivity, high thermal conductivity and mechanical intensity, wide band gap and low thermal expansion coefficient, aln thin films can be applied for insulating chips for semiconductor devices with high power, thermal dissipation lagers for large and super - large scale integrated circuits, insulating layers or passivation layers for semiconductor

    超薄鋁膜由於其特殊的的光學性質，在光學多層膜上有廣泛應用。氮化鋁薄膜化學穩定性高、熱傳導率高、機械強度高、電絕緣性能佳、高能隙、熱膨脹系數低，光學特性優良，可以用作大功率的紫外光學器件的散熱材料。
  5. The longer the air gap is, the higher the inception voltage ; the inception voltage is lower with 2kv at wet ice than dry ice. while, there is not a distinct effect of water conductivity on the initiative voltage

    間隙越長，起暈電壓越高;濕冰情況下間隙的起暈電壓比乾冰約低2kv ;而覆冰水電導率對起暈電壓沒有明顯的影響。
  6. By applying related theory of gas discharge and mathematical statistics, this paper more in - depth and systemic study the influence of the length of air gap, ice state, water conductivity and air pressure on the inception corona and pulse discharge characteristics, included the discharge frequency, discharge amplitude and time interval

    根據試驗結果，用氣體放電和數理統計方法，分析了覆冰水電導率、冰的狀態（乾冰和濕冰） 、空氣間隙長度、氣壓和施加電壓等參數的變化對間隙模型的起始放電電壓、脈沖放電特性、放電頻率、放電幅值和時間間隔等的影響。
  7. Diamond is a remarkable material due to its special crystal structure, which shows high hardness, low friction coefficient, high thermal conductivity, high optical transparency, low permittivity and high band gap etc. cvd diamond films are widely used in mechanical coating, heat sinks, optical window, semiconductor devices and other application fields because of its low price and high performance

    金剛石的特殊晶體結構使其成為一種性能優異的功能材料，它具有高硬度、低摩擦系數、高熱導率、高透光率、低介電系數和高禁帶寬度等性質。化學氣相沉積制備金剛石膜成本低、質量高，廣泛應用於工具塗層、熱沉、光學窗口、半導體器件等方面。
  8. The subst - itutional oxygen vacancies and tin contributing to its high conductivity. the high optical transmittance of ito films is a direct consequence of it being a wide band gap ( eg > 3ev )

    Ito結構中的氧空位和錫摻雜使得它具有很強的導電性，較大的能帶間隙寬度（ e _ g 3ev ）使得它具有很強的光透明性。
  9. With the introduction of the dopants, the effective mass of carriers was changed and the seebeck coefficient was increased. at the mean time, the dopants reduced the forbidden energy gap, which changed the carrier concentration and thus increased electrical conductivity. by calculating the forbidden energy gap and electrical conductivity of mg2si specimen doped with different amount sb, the mechanism of transference changed abruptly at 625k

    在mg _ 2si熱電材料基體中摻雜te 、 sb元素后，在結構中引入了缺陷，增大了體武漢理工大學博士學位論文系中載流子有效質量，提高了seebeck系數;降低了體系導電活化能，提高了電導率，同時也降低了熱導率。
  10. Boron nitride ( bn ) is an advanced semiconductor material with outstanding physical and chemical properties, such as high thermal conductivity, outstanding thermal stability, chemical inertness and wide band gap which up to 6. 0ev and hence has the potential for the high - temperature, high - power and radiation resistivity electronic applications

    它具有優異的熱穩定性、化學惰性，很高的熱導率，寬達6 . 0ev以上的光學帶隙，非常適用於高溫、大功率、抗輻射等特殊技術領域。
  11. Because of its excellent properties, such as large band gap, high thermal conductivity and high breakdown electric field, sic is appropriate for the electronic devices which can operate at extremely high temperatures and high radiation

    Sic材料具有禁帶寬、熱導率高、臨界擊穿電場高等特性，特別適合高溫、強輻射等惡劣環境下工作的電子器件製造。
  12. Due to its intrinsic merits, such as wide band gap, high electron saturated drift velocity, high melting point, good coefficient of thermal conductivity, anti - radiation and good chemical stability, gallium nitride as a direct band gap semiconductor has become the promising material for the application of short - wave light - emitting devices and high temperature, high frequency and high power electronic devices

    Gan是直接帶隙半導體材料，以其禁帶寬度大、電子飽和漂移速度大、熔點高、熱導率高、抗輻射能力強和化學穩定性好等優點成為製造短波長光發射器件及高溫、高頻、大功率電子器件的理想材料。
  13. Glow discharge appears when applied voltage further increases. with air gap increases, the mean discharge magnitude reduces. there is not an obvious effect of water conductivity on the mean discharge magnitude at dry ice, however, the mean discharge magnitude increases when water conductivity increases

    乾冰時覆冰水電導率對平均放電量的影響不大;濕冰情況下，覆冰水電導率越大平均放電量越大，其平均放電量明顯高於乾冰。
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