gas deposition 中文意思是什麼

gas deposition 解釋
氣相淀積
  • gas : n （pl gases ）1 氣，氣體，氣態 〈cf fluid; solid〉 2 可燃氣，煤氣，沼氣；【礦物】瓦斯。3 【軍事...
  • deposition : n. 1. 免職，罷免；廢位。2. 淤積[沉積]（物，作用）。3. 耶穌從十字架上放下（的畫、雕刻）。4. 寄存，委託；委託物。5. 【法律】口供，證言；口供書。
  1. Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate

    在jgp560c型超高真空多功能磁控濺射鍍膜機上，採用直流磁控濺射法在cdznte晶體上制備出cu ag合金薄膜，揭示了氣體流量、直流濺射功率、勵磁電源功率、工作氣壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明濺射功率對沉積速率的影響最大，隨濺射功率的增大沉積速率快速增大。
  2. In this investigation, gas barrier property of pet has been improved by plasma enhanced chemical vapor deposition ( pecvd ) and plasma immersion ion implantation ( piii ) technologies

    本文通過等離子體化學氣相沉積（ pecvd ）和等離體浸沒離子注入（ piii ）技術在聚酯材料表面制備了阻隔碳膜來提高氣體阻隔性能。
  3. In this paper, the gas phase dissociation process during the diamond film growth from electron - assisted chemical vapor deposition ( eacvd ) by considering ch4 / h2 mixture gas as source gas had been studied by using monte - carlo computer simulation method. the eacvd gas phase dynamics model was built firstly and the low temperature deposition process was also discussed

    本工作採用蒙特卡羅（ monte - carlo ）計算機模擬的方法，對以ch _ 4 h _ 2為源氣體的電子助進化學氣相沉積（ eacvd ）金剛石薄膜中的氣相分解過程進行了研究，初步建立了eacvd氣相動力學模型，並討論了eacvd中的低溫沉積過程。
  4. The material balance equation for common gas reservoir takes no account of the sulfur deposition, hence it is hard used to completely describe the production performance of gas reservoir with high content of h2s

    常規氣藏物質平衡方程沒有考慮硫沉積現象，因此不能用以完整地描述高含硫氣藏的開發動態。
  5. This paper deduces the material balance equation with high content of h2s considering the sulfur deposition, and provides tile material balance equation for the constant volume gas reservoir with high content of h2s

    在考慮硫沉積的基礎上，推導了高含硫氣藏的物質平衡方程，針對定容氣藏的情況，得到了定容高含硫氣藏的物質平衡方程。
  6. Mikrouna ' s products mainly include super purified glove box and gas purification system, vacuum deposition system and led / hid lighting production line, which have been exported to europe, north america and asia

    米開羅那產品主要包括超級凈化手套箱和氣體凈化系統、真空鍍膜系統、特種燈（ led / hid燈）生產線等，目前已出口到歐洲、北美洲及亞洲各國。
  7. By the design of microwave electric field mode and microwave mode converter ( mmc ), the thesis participated in equipping an domestic microwave plasma chemical vapor deposition ( mpcvd ) equipment with a quartz glass window and water - cooled stainless steel resonant chamber in 2450mhz / 5 kw, introduced the basic machineries and functions of the sub - systems, including microwave system, gas - route system, vacuum system, detecting system and safeguard system

    論文通過微波場型和模式轉換器的設計，參與建立了一套2 . 45ghz 5kw帶有石英玻璃窗、水冷卻不銹鋼諧振腔的微波等離子體化學氣相沉積（ mpcvd ）系統（ mpcvd - 4型） 。論述了包括微波系統、氣路系統、真空系統、檢測系統和保障系統等結構的組成及基本功能。
  8. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  9. In the work, mid - frequency pulse magnetron sputtering is used to prepare znoral thin films used as the back reflector of the thin silicon films solar cells. the best techological condition was obtained by optimizing the preparing conditions, ( var is decided by the deposition rate, target voltage : 265v, gas pressure : 0. 6pa, the high base vacuum is expected

    本文採用中頻脈沖磁控濺射法，通過優化zno ： al薄膜的制備工藝，如靶電壓、本底真空度、工作氣壓、襯底溫度、 o _ 2 ar ，得到可用於硅薄膜太陽能電池背電極的zno ： al薄膜。
  10. Among these methods, magnetron sputtering is the most widely used technique for preparing thin films owing to its high deposition rate and good uniformity etc. in my experiment, zao films were prepared by dc magnetron sputtering in pure argon gas atmosphere using zno target mixed with al2o3 ( lwt %, 2wt %, 3wt %, 4wt % respectively ) and the films were figured by xrd, sem, xps, afm and ftir, uv photometer

    本研究課題以氧化鋅鋁靶為靶材，採用直流磁控濺射工藝在純氬氣氣氛中沉積zao薄膜。靶材中al _ 2o _ 3的摻雜比例分別為1 、 2 、 3 、 4 。用xrd 、 sem 、 xps 、 afm和紅外、紫外分光光度計等測試手段對沉積的薄膜進行了表徵。
  11. The conclusions are drawn as following : 1. regularity of fabrication in aluminum matrix composite ring - shaped performs with large dimensions and effects of parameters were investigated, based on the novel crucible movable spray deposition technology and equipment. the optimal parameters are that the diameter of the delivery tube is 3. 8mm, spray gas pressure is 0. 8mpa, spray height is 200mm, and transferring pressure of sic is 0. 5mpa

    通過系統的實驗研究得到如下結論: 1 .基於新型的移動坩堝自動化控制噴射沉積環坯制備技術及裝置，研究了大尺寸鋁基復合材料環坯的制備規律，討論了噴射沉積工藝參數對沉積坯形成過程的影響，得到了最佳工藝參數:導流管直徑d = 3 . 8mm ，霧化氣體壓力p = 0 . 8mpa ，噴射高度h = 200mm ， sic顆粒輸送壓力p送= 0 . 5mpa 。
  12. In the experiments, two series of catalysts were synthesized by co - deposition and sol - gel methods each. the composition of both waterproof and gas diffusion layer and catalysis layer were optimized by the orthogonal test. meanwhile, quasi - steady cathode polarization curves, x - ray diffraction ( xrd ), scanning electronic microscope ( sem ) were used to analyst the relationship between the microstructure and the performance of air electrode

    實驗採用共沉澱法和溶膠凝膠法合成了兩類催化劑;對防水透氣層和催化層進行了正交試驗優化;同時，還採用測準穩態極化曲線， x射線衍射（ xrd ） 、掃描電子顯微鏡（ sem ）等分析測試手段，對空氣擴散電極催化材料、空氣擴散電極界面結構與性能的關系等作了較深入的研究。
  13. In this thesis, the history, structure. preparation method and basic properties of nano - composite materials and photoluminescence of nanocrystalline silicon have been summarized. research of the novel antireflecting energy saving coating glass has also been presented. the si / sic composite films are prepared with siht and ? 2 ^ 4 as the source gas by atmosphere pressure chemical vapor deposition ( apcvd )

    本論文全面介紹了納米材料，特別是納米鑲嵌復合材料的發展概況、特性、常用的制備方法、常見的幾種硅系納米材料以及有關納米硅材料的發光，並對新型無光污染節能鍍膜玻璃的研製和發展作了概述。
  14. In the experiments, the polypyrrole gas sensor was prepared on screen - printed electrodes by cvd ( chemical vapor deposition ). the effect of the electrochemistry undoping and doping on the characteristic of the gas sensor was studied

    實驗採用化學氣相沉積的方式在絲網印刷電極上沉積聚吡咯氣敏膜用於氣體的檢測，並研究了電化學去摻雜?摻雜對傳感器氣敏特性的影響。
  15. The main process parameters include hydrogen content in the gas sources, hydrogen plasma catalyst pretreatment, substrate bias, deposition temperature and plasma flow guiding

    主要之製程參數包括氣源中之氫氣含量、氫電漿前處理、基材偏壓、沉積溫度以及電漿導流板之施加。
  16. This paper has discussed preparing diamond - like carbon films by means of micro - wave ecr plasma source ion implantation and plasma enhanced chemical vapour deposition. we use the raman spectrum, ft - ir, afm and so on to study the dlc film. the result indicates : different bias voltage, frequency and gas flow rate of psii will have impact on sp3 proportion of dlc films, we find high bias voltage, low frequency and moderate gas flow rate can prepare high sp3 proportion dlc films ; we simply illustrate the influence of bias voltage on sp3 proportion of dlc films in pecvd

    研究結果表明：在全方位離子注入技術中，不同的偏壓、頻率、氣體流量都對薄膜中sp ~ 3鍵比例有所影響，文中對具體的影響進行了分析，發現偏壓的增加、頻率的降低和適中的氣體流量可以制備出sp ~ 3鍵比例高的類金剛石膜；在等離子增強化學氣相沉積技術中，對偏壓對sp ~ 3鍵比例的影響也進行了簡單分析。
  17. Sige simox ; 3. sige smart - cut and behavior of sige / si he terostructure implanted with hydrogen. sige film preparation : sige films were grown on silicon substrate using solid source molecular beam epitaxy ( ssmbe ), gas - solid source molecular beam epitaxy ( gsmbe ) and ultra high vacuum chemical vapor deposition ( uhvcvd ) technologies

    Sige薄膜生長方面：在熟悉各種薄膜外延技術的基礎上，採用了近年來發展較為成熟的固態源分子束外延（ ssmbe ） 、氣-固態源分子束外延（ gsmbe ） 、超高真空化學氣相淀積（ uhvcvd ）三種sige薄膜外延技術，在硅（ 100 ）襯底上外延生長了sige薄膜。
  18. ( 2 ) diamond - like carbon films could be fabricated by plasma enhanced chemical vapor deposition method too, the surface morphology of the films was good, but the films had very big internal stress, which could be decreased by adding proper nitrogen gas in work chamber

    （ 2 ）用等離子體增強化學氣象沉積技術也能制備類金剛石膜。優點是用這種方法制備的薄膜表面形貌得到了一定的改善，但內應力較大，通過加入適量的氮氣可以改善一些。
  19. In this paper, we employ the plasma enhanced chemical vapor deposition ( pecvd ) to prepare high quality zno thin film at low temperature using a zinc organic source ( zn ( c2h5 ) 2 ) and carbon dioxide ( co2 ) gas mixtures. the effect of the substrate temperature and annealing temperature on the quality of zno thin films was studied in detail

    為了在低溫下制備高質量的氧化鋅薄膜，我們採用金屬有機源和二氧化碳氣源，首次利用等離子體增強化學氣相沉積的技術在低溫下制備了高質量的氧化鋅薄膜，確定了生長高質量氧化鋅薄膜的優化條件；研究了不同的襯底溫度和退火溫度對氧化鋅納米薄膜質量的影響。
  20. In order to otain high quality zno thin films, we, for the first time, employ the plasma enhanced chemical vapor deposition ( pecvd ) to prepare high quality zno thin film at low temperature using a zinc organic source ( zn ( c2h5 ) 2 ) and carbon dioxide ( co2 ) gas mixtures. the effects of the growing condiction and the native oxide layer of si substrate on the quality of zno thin films was studied in detail. to prepare p - zno and overcome the dufficulty of reverse due to the interaction between the n atomic, we obtain high qulaity p - zno by a easy way of thermal zn3n2

    為了在低溫下制備高質量的氧化鋅薄膜，我們採用金屬有機源和二氧化碳氣源，首次利用等離子體增強化學氣相沉積的技術在低溫下制備了高質量的氧化鋅薄膜，系統地研究了生長條件以及襯底表面氧化層對薄膜質量的影響，確定了生長高質量氧化鋅薄膜的優化條件；為獲得p - zno材料，克服在zno中摻n雜質間相互作用影響摻雜效率不易獲得p - zno的困難，我們通過熱氧化zn3n2的方法制備了p - zno ，獲得了一系列研究結果： 1 、詳細研究了氣體流速比，襯底溫度和射頻功率實驗參數對氧化鋅薄膜特性的影響。
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