gas doping 中文意思是什麼

gas doping 解釋
氣體摻雜
  • gas : n (pl gases )1 氣,氣體,氣態 〈cf fluid; solid〉 2 可燃氣,煤氣,沼氣;【礦物】瓦斯。3 【軍事...
  • doping : 半導體中的攙雜質
  1. The hydropilicity and photocatalysis of the samples were studied. the effects of the substrate temperature, carrier gas flux, o2 flux and n doping level on the microstructure, composition and properties of the films have been studied synthetically

    文章系統研究了基板溫度、載氣流量、 o _ 2流量和n摻雜量等工藝參數對tio _ 2薄膜微結構、組成和性能的影響。
  2. In the experiments, the polypyrrole gas sensor was prepared on screen - printed electrodes by cvd ( chemical vapor deposition ). the effect of the electrochemistry undoping and doping on the characteristic of the gas sensor was studied

    實驗採用化學氣相沉積的方式在絲網印刷電極上沉積聚吡咯氣敏膜用於氣體的檢測,並研究了電化學去摻雜?摻雜對傳感器氣敏特性的影響。
  3. Meanwhile, the structural stability of delithiated cathode materials is also improved by ti doping. it results in the suppression of thermal decomposition reaction of delithiated cathode material, which will produce heat and oxygen gas as the fuse of electrolyte decomposition and combustion reaction. hence, thermal stability of delithiated cathode material is also enhanced by ti doping

    同時,欽的摻雜增強了電極材料在脫鏗狀態下的結構穩定性,抑制了電極材料自身熱分解反應的發生,阻止了氧氣和熱量的釋放,減少或延遲了電解液的分解或燃燒反應,從而提高了電極材料的熱穩定性。
  4. It is concluded that for cvd method the cubic phase content and adhesion are highly effected by the crystal lattice mismatch between c - bn and substrate materials, however, for sputter method the crystal lattice mismatch between c - bn and substrate materials affects the quality of c - bn thin films very little. 5 n - type doping of bn thin films and preparing of bn ( n - type ) / si ( p - type ) heterojunctions adding s into the mixture of argon and nitrogen used as working gas, we sputtered 1ibn target to deposit bn thin films so as to study the n - type doping of bn thin films, and bn ( n - type ) / si ( p - type ) heterojunctions were prepared

    5實現了氮化硼薄膜的n型摻雜,成功制備出bn型)乃…型)異質結並且首次系統研究了其卜v和cv特性我們用射頻濺射法濺射六角氨化硼靶,在工作氣體氮和氮中混入s ,沉積氮化硼薄膜,以研究氮化硼薄膜的n型摻雜,並得到bnh型)侶i …型)異質結。
  5. Influence of polarizations and doping in algan barrier on the two - dimensional electron - gas in algan gan heterostruture

    異質結構中極化與勢壘層摻雜對二維電子氣的影響
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