gate beam 中文意思是什麼

gate beam 解釋
橫肋梁
  • gate : n 1 大門,扉,籬笆門,門扇。2 閘門;城門;洞門;隘口,峽道。3 【冶金】澆注道,澆口,切口;【無線...
  • beam : n 1 梁,棟梁,桁條;(船的)橫梁。2 船幅;(動物、人的)體幅。3 (秤)桿,杠桿,(織機的)卷軸,...
  1. Auto parts : fuel injection system ( valve follower, plunger piston and fuel injection needle, etc. ), power train ( gear, rolling bearing etc. ), piston parts ( packing ring, gudgeon pin etc. ), cam shaft parts ( pin, bush, oscillation beam and some hydraulic components etc. ), others ( gate lock, accouterment etc. )

    汽車零部件:燃料噴射系統(氣門挺桿) 、柱塞、噴油針等) 、動力傳動系統(齒輪、滾動軸承等) 、活塞部件(活塞環、活塞銷等) 、凸輪軸部件(銷、襯套、搖臂及部分液壓元件等)和其他部件(如門鎖、內飾等) 。
  2. Two numerating methods are used in traditional structural design of gate chamber. first, considering the gate frusta to be fastened on the weir body, it is calculated as plane stress problem independently. then applying the results ( moment and vertical force ) on the bottom of gate frusta as concentrating load on the weir body, and the weir body is viewed as a elastic foundation beam or plate and unilateral stress analysis was performed

    傳統閘室結構計算有兩種計算方法,其一是將閘墩視為固端于堰體上,單獨進行閘墩平面受力計算,再將閘墩下部的計算結果(彎矩和垂直力)作為集中荷載作用於堰體上,堰體作為彈性地基梁或板進行片面應力計算。
  3. There are many lifting equipments with thousands of varieties and specifications, such as l series of electric single beam cranes and manual single beam cranes, q series of electric bridge - style cranes, m series of gate - style cranes, qt series of tower cranes, and h series of electric hoist cranes, which are widely used in the industries of metallurgy, machine, mine, railway, port, oil, chemical industry, construction and so on

    集團的主要產品有l系列電動系梁起重機及手動單梁起重機, q系列電動橋式起重機, m系列門式起重機, qt系列塔式起重機, h系列電動葫蘆及其它形式的起重機械共有千個品種規格,廣泛應用於冶金、機械、礦山、鐵路、港口、石油、化工建築等行業。
  4. Ccd ), light signals from the object is covered by relay scattering when laser beam penetrates through the atmosphere. so the technique of range gate has been used in such system

    當激光通過大氣時,瑞利散射將使得ccd器件接收到的目標回波信號淹沒在噪聲信號之中,因此系統中採用了距離選通技術。
  5. By studying and using conventional 1c process in combination with electron beam lithography ( ebl ), reactive ion etching ( rie ) and lift - off process, several efficient results are produced : semiconductor and metal nano - structures are fabricated ; the matching problem of photolithography and electron beam lithography is well solved ; the process efficiency is improved ; the process is offered for the controlled fabrication of nano - structures by repetitious process testing ; several nano - structures such as si quantum wires, si quantum dots, double quantum dot structures and tri - wire metal gate are firstly fabricated by using ebl and rie processes

    研究利用常規的硅集成電路工藝技術結合電子束光刻,反應離子刻蝕和剝離等技術制備半導體和金屬納米結構,很好地解決了普通光刻與電子束光刻的匹配問題,提高了加工效率,經過多次的工藝實驗,摸索出一套制備納米結構的工藝方法,首次用電子束光刻,反應離子刻蝕和剝離等技術制備出了多種納米結構(硅量子線、量子點,雙量子點和三叉指狀的金屬柵結構) 。
  6. Internal field generated by contact potential of gate electrode and substrate is considered to be responsible for the enhancement of c - v hysteresis. we first incorporate e - beam evaporation of hf with post thermal oxidation to fabricate hfo2 for the application of gate dielectrics

    硅化物主要是由沉積過微溯博士裕文搏要程中hf和出的互擴散引起的,而熱氧化可以將其轉化成具有較高介電常數的硅氧化物hfxsiyo 。
分享友人