gate dielectric 中文意思是什麼

gate dielectric 解釋
柵極絕緣層
  • gate : n 1 大門，扉，籬笆門，門扇。2 閘門；城門；洞門；隘口，峽道。3 【冶金】澆注道，澆口，切口；【無線...
  • dielectric : adj. 非傳導性的，絕緣的，介電的。n. 電介質，電介體，絕緣體。
  1. Research progress in electrical properties of high - k hfo2 gate dielectric films

    2柵介質材料電學特性的研究進展
  2. These problems boost the study of high - k materials as the alternatives of sio2 gate dielectrics. among all high - k gate dielectric materials, hafnium oxide ( hfo2 ) is being extensively investigated as one of the most promising candidate materials due to its superior thermal stability with poly - si, biggish constant and reasonable band alignment. our researches focus on hfo2 dielectrics

    高k柵介質材料已經被廣泛地研究來替代sio _ 2 ，以降低柵泄漏電流和改善可靠性，其中， hfo _ 2由於其較大的介電常數、較大的禁帶寬度、與si的導帶和價帶較大的偏置、以及與si的高的熱力學穩定性等特徵，被認為是最有希望的替代sio _ 2的柵介質材料之一。
  3. The la2o3 material was paid attention because of its good gate dielectric properties, but there are a lot of properties are under research, the most important property is thermal stability. to improve the situation the author has made the following research and achieved beneficial results

    La _ 2o _ 3是一種新型的高介電常數的柵介材料，它的優良性能引起了微電子界的注意，但它的很多特性還有待于研究，其中最重要的是它的熱穩定性和隧道電流。
  4. This dissertation investigates the breakdown theory and reliability characterization methods of the time dependent dielectric breakdown ( tddb ) for the ultra - thin gate oxide, and the hot - carrier effect ( hce ) in deep sub - micron mosfet ' s

    本文對超薄柵氧化層經時擊穿（ tddb ）擊穿機理和可靠性表徵方法以及深亞微米mos器件熱載流子效應（ hce ）進行了系統研究。
  5. The author ' s main contributions are outlined as following : first, the roles of hot electron and hole in dielectric breakdown of ultra - thin gate oxides have been quantitatively investigated by separately controlling the amounts of hot electron and hot hole injection using substrate hot hole ( shh ) injection method. the changes of threshold voltage have been discussed under different stress conditions

    主要研究結果如下：首先，利用襯底熱空穴（ shh ）注入技術分別控制注入到超薄柵氧化層中的熱電子和空穴的數量，定量研究了熱電子和空穴注入對超薄柵氧化層擊穿的影響，討論了不同應力條件下的閾值電壓變化。
  6. Solving process of trap density and extracting of correlative parameters in thin gate dielectric

    薄柵介質陷阱密度的求解和相關參數的提取
  7. In order to resolve the questions, a new high k material is developed instead of the traditional sio2 gate dielectric material to reduce the tunneling current

    目前，正在利用介電常數較大的材料來代替傳統的sio _ 2作為柵介材料，來減少隧穿電流。
  8. The multi - layer model algorithm not only calculates the thickness of gate dielectric but also validates whether the model is proper. it has high practical merit to analyze the structure of gate dielectric

    這種演算法和軟體的實現對于mos柵介質層的結構分析有很高的實用價值，對于微電子器件的結構研究有一定的推動作用。
  9. Since metal - oxide - semiconductor ( mos ) device appeared, integration of integrated circuit ( ic ) expands as moore law. meanwhile the dimension of device scales down, the thickness of sio2 gate dielectric shrinks as the same law. but as the thickness of sio2 gate dielectric reaches at isa, the gate current rises very quickly and reaches at 1 10a / cm2

    自從金屬-氧化物-半導體（ mos ）器件出現以來，集成電路的集成度按照摩爾定律增加，相應地，器件的物理尺寸按照等比縮小的原則不斷縮小， sio _ 2作為柵介質的厚度不斷縮小，特徵尺寸在0 . 1 m以下的集成電路要求sio _ 2柵介質的厚度小於1 . 7nm 。
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