gate oxide 中文意思是什麼

gate oxide 解釋
門氧化物
  • gate : n 1 大門，扉，籬笆門，門扇。2 閘門；城門；洞門；隘口，峽道。3 【冶金】澆注道，澆口，切口；【無線...
  • oxide : n. 【化學】氧化物。 antimony oxide 銻白，氧化銻。 deuterium oxide 重水，氧化氘。 mercuric oxide 氧化汞。 nitric oxide 一氧化一氮。
  1. This voltage creates a field across the gate oxide, which causes the adjacent p substrate to invert to n-type.

    這一電壓在柵極氧化物層上產生一個電場，它導致毗鄰的P型襯底轉變成N型。
  2. These problems boost the study of high - k materials as the alternatives of sio2 gate dielectrics. among all high - k gate dielectric materials, hafnium oxide ( hfo2 ) is being extensively investigated as one of the most promising candidate materials due to its superior thermal stability with poly - si, biggish constant and reasonable band alignment. our researches focus on hfo2 dielectrics

    高k柵介質材料已經被廣泛地研究來替代sio _ 2 ，以降低柵泄漏電流和改善可靠性，其中， hfo _ 2由於其較大的介電常數、較大的禁帶寬度、與si的導帶和價帶較大的偏置、以及與si的高的熱力學穩定性等特徵，被認為是最有希望的替代sio _ 2的柵介質材料之一。
  3. With the continued scaling - down of mosfet, the ultra - thin gate oxide causes some serious problems of devices. the ultra - thin sio2 dielectrics cause significant leakage current, consequently increases standby power of device. meanwhile, the reliability of gate dielectrics is also degraded

    當mosfet器件按比例縮小到70nm尺寸以下時，傳統的sio _ 2柵介質的厚度將需要在1 . 5nm以下，如此薄的sio _ 2層產生的柵泄漏電流會由於顯著的量子直接隧穿效應而變得不可接受，器件可靠性也成為一個嚴重的問題。
  4. A new hot - carrier - induced tddb model of ultra - thin gate oxide is reported in this dissertation

    本文提出了一個全新的熱載流子增強的超薄柵氧化層經時擊穿模型。
  5. Secondly, the transient characteristics of fn tunneling and hot hole ( hh ) stress induced leakage current ( silc ) in ultra - thin gate oxide are investigated respectively in this dissertation

    其次，本文分別研究了fn隧穿應力和熱空穴（ hh ）應力導致的超薄柵氧化層漏電流瞬態特性。
  6. A detailed theory analysis is made and a two - step breakdown model of ultra - thin gate oxide is presented

    對上述實驗現象進行了詳細的理論分析，提出了超薄柵氧化層經時擊穿分兩步。
  7. Hot hole injection experiments reveal that the lifetime of ultra - thin gate oxide is not simply determined by the total number of injected hole

    熱空穴注入的實驗結果表明超薄柵氧化層的擊穿不僅由注入的空穴數量決定。
  8. The first important thin film from the thermal oxide group is the gate oxide layer under which a conducting channel can be formed between the souce and the drain

    第一個重要的來自熱氧化組薄膜是柵氧化層，在它之下，源和漏之間就能形成導電通道。
  9. The emphasis is about the metal line reliability, contact reliability, gate oxide integrity, and hot carrier injection in test. based on the test datum, the reliability of 1. 0 m process on single failure mechanisms is evaluated, and all the test structures are explained

    測試內容上著重介紹了金屬化完整性測試、氧化層完整性測試、連接完整性測試和熱載流子注入測試，根據測試數據，對1 . 0 m工藝線單一失效機理的可靠性進行了評價，對不同測試結構的作用進行了說明。
  10. Tddb and hce always take place simultaneously under device operation conditions. hot - carrier enhanced tddb effect of ultra - thin gate oxide is investigated by using substrate hot - carrier injection technique

    在通常的工作條件下，氧化層的經時擊穿和熱載流子效應總是同時存在的。
  11. This dissertation investigates the breakdown theory and reliability characterization methods of the time dependent dielectric breakdown ( tddb ) for the ultra - thin gate oxide, and the hot - carrier effect ( hce ) in deep sub - micron mosfet ' s

    本文對超薄柵氧化層經時擊穿（ tddb ）擊穿機理和可靠性表徵方法以及深亞微米mos器件熱載流子效應（ hce ）進行了系統研究。
  12. The calculational result by exact solution shows that the substrate inject current is larger than gate inject current in the same condition. the influence of the thickness of sio2 and la2o3 on the tunneling current is given to compare much different thickness of sio2 and la2o3 tunneling current on the same equivalent oxide thickness ( eot ) condition

    在等效氧化層厚度相同的情況下，比較了幾種不同的sio _ 2層厚度和la _ 2o _ 3層厚度結構的隧穿電流的大小，給出了sio _ 2層厚度和la _ 2o _ 3層厚度對隧穿電流的影響。
  13. With taking advantage of the model of two - stage h + process of interface trap formation and the role that f play in radiation hardness in gate - oxide. the above - mentioned result is deeply analyzed

    藉助界面態建立的h ~ +兩步模型和f在柵氧化層中對抗輻照加固所起的作用對上述結果進行了深入的分析。
  14. This voltage creates a field across the gate oxide, which causes the adjacent p substrate to invert to n - type

    這一電壓在柵極氧化物層上產生一個電場，它導致毗鄰的p型襯底轉變成n型。
  15. The results show that charge to breakdown qbd depends not only on the gate oxide quality but also on the voltage stress, current density and the gate oxide area

    結果表明：相關擊穿電荷q _ （ bd ）除了與氧化層質量有關外，還與電壓應力和電流密度以及柵氧化層面積有關。
  16. Since metal - oxide - semiconductor ( mos ) device appeared, integration of integrated circuit ( ic ) expands as moore law. meanwhile the dimension of device scales down, the thickness of sio2 gate dielectric shrinks as the same law. but as the thickness of sio2 gate dielectric reaches at isa, the gate current rises very quickly and reaches at 1 10a / cm2

    自從金屬-氧化物-半導體（ mos ）器件出現以來，集成電路的集成度按照摩爾定律增加，相應地，器件的物理尺寸按照等比縮小的原則不斷縮小， sio _ 2作為柵介質的厚度不斷縮小，特徵尺寸在0 . 1 m以下的集成電路要求sio _ 2柵介質的厚度小於1 . 7nm 。
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