gate temperature 中文意思是什麼

gate temperature 解釋
片門溫度
  • gate : n 1 大門,扉,籬笆門,門扇。2 閘門;城門;洞門;隘口,峽道。3 【冶金】澆注道,澆口,切口;【無線...
  • temperature : n. 1. 溫度,氣溫。2. 體溫。3. 〈口語〉發燒,高燒。
  1. Sluice gate of double disk is controlled by electric - hydraulic handspike ; plc will compare sand temperature on outlet according to pre - designed value and inner sand temperature of double disk ; and then it adjusts close time of sluice gate, controls residence time of hot sand in double disk ; therefore, it can control sand temperature of outlet and make it reach required value.

    雙盤的卸砂門由電液推桿控制, plc根據預設的出口砂溫與實測的雙盤內砂溫進行對比,而調整卸砂門的關閉時間,控制熱砂在雙盤內的停留時間,進而控制雙盤出口砂溫使其達到要求。
  2. A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed

    提出了一個價帶附近的界面態分佈模型,用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線;分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響;論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性,分別模擬了室溫下和300時sicpmos器件的輸出特性,分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。
  3. Ensure safety inusing the instrument, it is installed with unbalanced unit, gate lid, overspeed and overtemperature protection device. and colding & heating dual control temperature unit can meet the need of component blood ' s separating temperature

    設有不平衡、超速、超溫、門蓋等多種保護、確保儀器安全使用,製冷加熱雙路控溫滿足了成分血液分離溫度。
  4. Due to special reason, our reefer cargo did not reach the setting temperature. please allow below cargo to gate - in terminal

    我司以下出口冷箱因故溫度達不到設定點。請先予以進港。
  5. Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically

    在此基礎上,對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究,著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移( vth和vit 、 vot )與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。
  6. It can call the police at the moment danger, and provide identity and detecting and monitor of temperature and humidity, and control action of gate - lock, air - conditions and other appliance

    具有對住宅各要害部位進行多種監測報警服務功能,集防盜、防劫、防火、防水、防燃氣泄漏等功能於一體,一遇不測即刻自動報警;提供門禁身份識別及溫濕度檢測和顯示,同時可控制門鎖動作,空調等家用電器。
  7. Cz40 series of gate valve, high temperature, high pressured chrome - molybdenum steel heavy - caliber valve which are mainly researched by him attain the state - level new product separately, first prize of city level advanced technology award, second prize of provincial level advanced technology award

    作為主研人員研製的cz40系列閘閥、高溫、高壓鉻鉬鋼大口徑閥門分別獲國家級新產品,市級科技進步一等獎,省級科技進步二等獎。
  8. Electronic units are applied to this device and poleless power regulating method is employed to control heating units, therefore the water temperature near the gate is prevented from being affected by the temperature change of surroundings and ice - free temperature is maintained all the time

    該裝置利用電力電子元件,採用無極調功的形式控制加熱元件,使閘門附近的水溫不受環境溫度變化的影響,始終保持在不凍的溫度。
  9. The emphases of our research works are as follows : under ultra - low temperature ( about 0. 236k ) conditions, how the frequency and power of the saw and the source drain voltage influence the acoustic current ; and the relationship between the source drain current and the split - gate voltage ; and how to find the cut off voltage of the quasi - 1d electron channel ; and also the frequency character of the idt in the saw parts

    研究的重點為,在甚低溫( 0 . 236k )下,通過實驗研究表面聲波的頻率和功率,源漏偏壓等因素對聲電電流的影響;研究準一維電子通道中不同源漏電流與分裂門負偏壓的關系,以找到分裂門的鉗斷點電壓;以及研究聲表面器件叉指換能器的頻率特性等。
  10. High temperature pressure power station gate valves

    高溫高壓電站閘閥
  11. Discharge - sand gate offers double disk cooling system creditable condition for low temperature ; when sand temperature is very high, it can change the way of discharge - sand gate into intermittent type : put rating sand to double disk and spray water for falling temperature until temperature falls designed range ; open the discharge - sand gate and discharge sand ; and then takes anther cycle ; this type has good effect after real testing, which is the effective way for exerting cooling function of double disk

    卸砂門這種控制方式給雙盤冷卻系統的可靠降溫提供了條件,當型砂溫度較高時可將卸砂門改成間歇式的,先將雙盤內加入給定的砂量,噴水后直到溫度降到給定的范圍后,卸砂門打開將砂子卸出,然後進行下一循環,這一方式經實際運行驗證效果良好,是充分發揮雙盤冷卻作用的有效途徑。
  12. Problems about fabrication of sige - oi substrate, low - temperature gate oxidation and source / drain ion implantation are discussed after considering technology level and reported articles

    然後用二維模擬軟體medici模擬,得到器件的閾值電壓約為- 0 . 1v ,泄漏電流很小。
  13. Technical specification of hihg temperature high pressure globe stop valves and gate valves for power station

    電站高溫高壓截止閥閘閥技術條件
  14. Nanjing century tower is the symbolic building on kazi gate square. it is a kind of typical pylon - cable - arch structure on which all substructures are connected one another, combine into the whole, resist the forces from dead load, earthquake, wind, temperature together. however, the pylon belongs to oblique towering structure ; the arch flexible arch structure ; the cable special suspended cable structure

    南京世紀塔是南京卡子門廣場的標志性建築,該標志物是典型的高柔塔-索-拱結構,結構體系內各子結構相互連接,組合成一個整體,共同承受自重、地震、風、溫度的作用。
  15. The melt velocity far from the gate was found to be higher than that near the gate during the compression stage contrary to that of conventional injection molding ( cim ) resulting in different part residual stress and melt temperature distribution

    在壓縮階段離膠口較遠的熔膠速度會比離膠口較近的熔膠速度來的快,這種現象與傳統射出成型是相反的,也因此導致殘餘應力與熔膠溫度的分佈與傳統不同。
  16. 4. investigation are made into preparations of thin gate - oxides for strained si channel mosfet ’ s using pecvd at 300 and low - temperature ( 700 ? 800 ) thermal oxidation, respectively

    4 .分別對300 c下採用等離子體增強化學氣相淀積( pecvd )和700 ~ 800 c下採用熱氧化技術制備sigehmos器件柵介質薄膜進行了研究。
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