gettering 中文意思是什麼
gettering
解釋
除氣-
Test method for gettering properties of non - evaporable getter
非蒸散型吸氣劑吸氣性能測試方法 -
The influence of aluminium gettering on the multicrystalline silicon solar cell
鋁吸雜對多晶硅太陽電池的影響 -
High leakage currents and soft reverse current - voltage characteristics are some of the detrimental effects produced by the metal atoms dissolved in the silicon matrix. gettering procedures can reduce metal contamination
由於金屬雜質原子擴散並沉積在器件的有源區，會造成諸如：反向漏電流較大，反向擊穿電壓是軟擊穿等有害的影響。 -
The gettering processes usually are estimated by gettering of au to nanocavity in silicon. in this paper, the characteristics of nanocavity gettering mechanism, diffusion and distributing of aurum and ion implantation in silicon were described. in this work, many bumps on the polishing surface of the silicon, after a he + impantation in and subsequently a hot - treatment, were observed using atomic force microscope ( afm )
我們注意到，在研究氫、氦離子注入誘生微孔的吸除作用時多以對金雜質的吸除效果來對吸除工藝進行評估，因此本文對微孔吸除機理、金在硅中的擴散和分佈以及半導體中離子注入的特點進行了描述。 -
The local pt diffusion is formed by the pt gettering by the hole defection deduced by hydrogen irradiation. the irradiation energy and dose definite the axial position and dose of the local pt diffusion respectively
本課題研究提出了新型的局域鉑摻雜技術和電子輻照技術相結合的壽命控制技術，以期改善frd的綜合性能。 -
The samples that annealed at different temperatures and different cooling ways ( fast or slow ), separately, was compared. the experimental results showed that the temperature and the cooling - way of the gettering process were very important for the gettering efficiency
之後二極體分別進行退火溫度700 6hr 、 800 6hr 、 900 6hr和退火后快、慢降溫方式下j _ r值的比較，結果表明吸除熱處理摘要abstraer溫度對于吸雜效果至關重要。 -
The n / n + and p / p + epitaxial structures, which become popular with the development of coms technology, because they can avoid the latch - up and a softerror of ulsi while they combined with the intrinsic gettering ( ig ) technique
Coms工藝中普遍採用n / n ~ + 、 p / p ~ +的外延結構，這種以重摻雜矽片為襯底的外延結構與內吸雜工藝相結合，是解決集成電路中的閂鎖效應和粒子引起的軟失效的有效途徑。 -
In addition, integrated circuits and semiconductor devices are generally made with single - side polished wafers, therefore the results of this work indicate that nanocavity - gettering technique is practical in manufacture of devices. finally, the gettering uniformity is demonstrated directly on samples. the gettering results of au to oxygen intrinsic precipitation and to the nanocavity formed by helium ion implantation were compared and discussed in this paper
本文還對實驗樣品中存在的氧沉積、晶格損傷對金雜質的吸除效果，與注氦誘生微孔的吸雜效果進行了比較和討論，進一步證實了注氦誘生微孔吸除金雜質的均勻性，並加深了對微孔吸除機理的理解。 -
Standard practice for determining gettering rate, sorption capacity, and gas content of nonevaporable getters in the molecular flow region
測量分子流動區域內不揮發吸收劑的吸收速率吸收能量及氣體含量 -
Test method for gettering properties of barium flash getter
蒸散型鋇吸氣劑吸氣性能測試方法 -
Oxygen precipitates (useful for gettering) can reduce the yield strength (critical shear stress) up to fivefole.
氧沉澱（可用作吸雜）會使屈服強度（臨界剪應力）降低為五分之一。 -
Also, the ncz ( nitrogen doped silicon ), which is my laboratory research characteristic, is research focus at present because it has strong mechanical strength and advantage intrinsic gettering property
同時微氮硅單晶由於其較強的機械強度和內吸雜能力等優點是目前研究的熱點，也是我們實驗室的特色。 -
Test methods of gas absorption characteristic for non - evaporation gettering materials and products
非蒸散型吸氣材料及製品吸氣性能測試方法 -
The results of the experiments were that leakage - currents of the 77 % diodes have obviously reduced in form 0. 08 ~ 11 a / cm2 to a value smaller than 0. 032 a / cm2. therefore, the gettering efficiency and homogeneity has been demonstrated on devices. it was also concluded that, from the experiments, the cavities band for gettering on the pol ished backside of the wafer was more efficient than that on the rough side
氦微孔在雙面拋光矽片上顯示了很好的吸雜效率和均勻性， 77 %的注氦微孔二極體經過熱處理j *值從0 . 08一n州/ cm 』降到了0 . 032州/ cm 』以下: he +注入粗糙背面的二極體也有相當好的吸雜效果，但總體上要弱於拋光背面的吸雜效果;且單、雙面拋光片的人值的最大降低幅度都達三個數量級，證明了氦微孔強大的吸雜能力。 -
Thus, an optimized gettering process obtained was 800 and following a slow cooling
氦微孔吸除熱處理合適溫度條件是800 ，冷卻條件是慢降溫方式。 -
The efficiency and the homogeneity of cavities gettering were analyzed by measuring the leakage - current for the diodes in a wafer, which was thermally treated at the optimal condition, that is 700 1hr, then 800 6hr and slow cooling down
第二階段，氦微孔吸雜效果的研究。採用做有二極體的大矽片在700 lhr + 800 6hr + 』漫降溫的熱處理條件下對微孔吸雜的效率、均勻性進行實驗。 -
Recently, a new gettering technique, which cavities formed by high - dose helium - implantation and subsequent annealing at lower temperature is efficiently at gettering metal impurities, has been concentrated
近年來一種新的吸雜技術?氦微孔吸雜技術因其對金屬雜質顯著的吸除效果而備受關注。 -
Many gettering techniques have been widely studied to overcome this problem by removing metal impurities from active regions of device. one new gettering method that has recently received growing interest is the use of nanocavities resulting from helium or hydrogen implantation
所以需要減小有源區中金屬雜質的濃度，通常採用吸除的方法把金屬雜質從器件有源區吸收到有源區之外預先形成的sink （陷阱）中。 -
Metal impurities unintentionally introduced into si wafers during various device process steps are very harmful to device performances. many gettering techniques have been widely studied to overcome these problems by removing metal impurities from the active region of a device. reduction in device size and introduction of new moralization processes require more efficient gettering techniques working at lower temperatures
半導體工藝中無意引入的金屬雜質的污染會極大損害器件性能，為了將金屬雜質從器件的有源區吸除，吸雜技術被廣泛的研究，器件尺寸的不斷縮小和新的金屬化工藝的不斷出現更需要能在低溫有效吸除的技術。 -
Some previous experiments have showed that cavities had more efficient gettering than p - diffusion, mechanical damage and ion implantation. most of studies about cavities gettering are concentrated on the peculiarity of cavities gettering metal impurities intentionally into silicon wafer from the viewpoint of basic study. this technique especially applied to low - contamination process, how ever, has not been carefully studied, which should be important to the semiconductor manufacturing
而過去的工作多集中在從基礎研究的角度研究氦微孔對有意摻入金屬雜質的矽片的吸除特性，對無意引入的低濃度金屬雜質的器件吸雜效果的研究卻非常少，這方面的研究是氦微孔技術走向實際應用的必經之路。
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