gmr 中文意思是什麼

gmr 解釋
粗粒微粒比
  1. More recently, the perovskite manganite compounds, a1 - xbxmno3 have received much attention because of their gigantic magnetoresistance ( gmr ) and charge ordering properties

    近幾年來，這類鈣鈦礦型結構的氧化物材料因為其具有的巨磁電阻效應受到了更多的關注。
  2. The drives rely on a spintronic effect, giant magnetoresistance ( gmr ), to read such dense data

    這種硬碟是利用一種巨磁阻的自旋電子效應來讀取這些高密度的資料。
  3. Most, if not all, of the magnetic disk drives used in today ' s computers employ gmr read - head sensors to detect the magnetic bits of stored information

    現在，絕大多數電腦里的磁碟機，是用gmr的讀取頭來偵測儲存資訊的磁位元。
  4. ( 3 ) the most principal factors that influence the supersonic atomization process include the flow ratio of the gas - liquid metal ( gmr ) value, the flow of atomizing of gas and the range of the inverse vortex taper. the more of the value of three factors, the more advantage they are for the atomization and the more fine the powders are. ( 4 ) the produced powders are the best in efficient atomization efficiency, particle diameter, particle shape and dispersion when the solder alloy is zhl63a, atomizing medium is n2, the protrusion h = 6. 0mm, atomizing gas pressure p = 100mpa, over - heat temperature t = 167 ( t = 350 )

    研究結果表明： （ 1 ）超音速霧化器的氣體流場在導液管下端形成一個倒渦流錐，在二維空間上呈軸對稱的雙峰分佈，負壓形成於這個倒渦流錐內； （ 2 ）修正後的霧化氣體速度公式可以滿足超音速霧化的要求； （ 3 ）影響超音速霧化工藝最根本的因素有氣液質量流率比（ gmr ）的大小、霧化氣體流量和倒渦流錐范圍，三個因素的值越大，對形成細粉越有利； （ 4 ）在焊錫合金為zhl63a ，霧化介質微n _ 2 ，導液管突出高度取h = 6 . 0mm ，霧化氣體壓力取p = 1 . 0mpa ，合金過熱度取t = 167 （ t = 350 ）時，所制得的粉末在有效霧化率、顆粒球形度、粒度及其離散度三個方面綜合性能最好。
  5. The phase structure of different cu - fe thin films were studied by using grazing incidence x - ray analysis ( gixa ). the texture and residual stress of different cu - fe thin films were measured by scan of x - ray diffraction ( xrd ) and 2 scan with different. the thicknesses of different thin films were characterized by means of small angle x - ray scattering ( saxs ) technique. by using atomic force microscope ( afm ) measured surface roughness of thin films. the component of different thin film was characterized by energy disperse spectrum ( eds ) and x - ray fluorescence ( xrf ). the magnetic properties of cu - fe thin films were measured by means of vibrating sample magnetometer ( vsm ). in addition, the giant magnetoresistance ( gmr ) effects of different films were also measured. the original resistance of the film fabricated by a direction - current magnetron sputtering system is directly affected by bias voltage

    利用掠入射x射線分析（ gixa ）技術對不同cu - fe薄膜的相結構進行了研究;利用xrd掃描及不同角度的2掃描對薄膜進行了結晶織構及殘余應力分析;運用小角x射線散射（ saxs ）技術測量了薄膜的厚度;採用原子力顯微鏡（ afm ）觀察了薄膜的表面形貌;運用能量損失譜（ eds ）及x射線熒光光譜（ xrf ）對薄膜進行了成分標定;使用振動樣品磁強計測量了不同cu - fe過飽和固溶體薄膜的磁性能;最後利用自製的磁阻性能測試設備測量了真空磁場熱處理前後不同薄膜的巨磁阻值。
  6. 5, we got the temperature property of spin - valve gmr

    5 ，得到了自旋閥gmr的溫度特性結果。
  7. This paper studies the angular sensing properties of a typical spin - valve gmr chip with the help of some basic theories in magnetic electronics and experiment

    本文結合磁電子學的基本理論和實驗研究了一種自旋閥gmr晶元的角度傳感特性。
  8. 6, we got the data of noise and magnetic lag in spin - valve gmr and also gives some resolutions in applications. the results show that the spin - valve gmr chip will has a better output waveform when it ' s filtered

    6 ，得到了自旋閥gmr的噪聲和磁滯特性數據，提出了一些解決的方法，實驗表明對自旋閥晶元組成的橋路初始輸出進行濾波可以得到較好的輸出波形。
  9. Gmr property of these materials finds potential applications in the field of magnetic sensors, in memory applications and in prototype disc drives employing read - head technology

    巨磁電阻材料在磁傳感器、磁記錄和可讀磁頭方面有很廣闊的應用前景。
  10. Spin - valve gmr is a member of gmr materials. it ' s not sensitive in a typical magnetic field intensity but it ' s very sensitive with the direction of magnetic field, and so it ' s useful in angular sensors

    自旋閥gmr是gmr巨磁阻材料的一種，它在一定的磁場范圍內對外磁場的大小不敏感，但對外磁場的方向很敏感，因而在開發角度傳感器上有一定的應用價值。
  11. 2, design a structure makes the liner output higher to 160mv with a liner input about 150 in bridge of spin - valve gmr. in comparison of some typical mr angular sensors it ' s output make a great progress

    2 ，設計了一種結構使自旋閥gmr晶元組成的橋路輸出電壓信號線性區達到約150 ，輸出幅度達到了160mv ；相比一些典型的磁阻非接觸式角度傳感器，量程獲得了可觀的擴展。
  12. Gmr effect is also discoveried in guanular film 、 tunneling junction resistance and spin valve. the

    但在這幾種巨磁電阻效應中，要數隧道結巨磁電阻效應最引人注目。
  13. We only need consider electron as carrier of electric charge in former electron transporting process, but in gmr effect, electron not only is the carrier of electric charge, but also has spin

    在以往的電子輸運過程中，人們僅需要考慮電子作為電荷的載體，但在巨磁電阻效應中，電子不僅是電荷的載體，而且具有自旋。
  14. Within the framework of the latter one, the gmr dependence on temperature and volume - fraction is discussed in the paper, with consideration of different kinds of magnetic entities

    本文採取了后一條途徑，具體考慮多種磁組分形態對巨磁阻效應的影響，詳細討論了巨磁阻的溫度效應和濃度效應。
  15. There are mainly two ways of theoretic study on gmr in magnetic granular alloys. one is to extended the quantum or quasi - classical treatments of gmr in multilayers to the one in magnetic granular systems. the other is a phenomenological method which adopes effective medium approxiation ( ema ) and two - channel model directly

    顆粒復合膜中巨磁阻效應理論研究主要有兩條途徑：一條是將多層膜中巨磁阻效應的量子方法和半經典方法推廣到顆粒復合體系，另一條是直接利用有效介質理論和雙通道模型的唯象方法。
  16. The gmr effect has became a international researching hotspot after the discovery of gmr effect of fe / cr multilayers. people found that multilayers formed by ferromagnetic metal of transition family and nonmagnetic metal or by alloy film and nonmagnetic metal will take on gmr effect. the value of gmr of co / cu multilayers is the biggest which can reach 65 % under room temperature

    繼fe / cr多層膜巨磁電阻效應發現以後，巨磁電阻效應已成為國際研究的熱點，人們發現過渡族鐵磁金屬或合金薄膜與非磁性金屬構成多層膜后均可呈現巨磁電阻效應，其中以co / cu多層膜的gmr值最高，室溫巨磁電阻效應可達65 % 。
  17. Gmr material is a new kind of magnetoresistance materials. it ' s very valuable in sensor applications with its high sensitivity and good temperature property

    Gmr巨磁阻材料是一種新型的磁阻材料，它的靈敏度很高，溫度系數較小，易於集成。
  18. The effect of anneal on the gmr of co ion implantation discontinuous multilayer films is greater than that of without ion implantation films

    退火對離子注入后的非連續多層膜gmr效應的影響比未注入離子的非連續多層膜gmr效應的影響顯著。
  19. Gmr head technology - increased areal density and improved performance

    大型磁阻磁頭gmr head技術-增加磁錄密度及改善性能
  20. Spin tropism relative to regional magnetization vector will affect its transporting property. the discovery of gmr effect pioneered the new subject which is called magnetoelectronics

    自旋相對于局域磁化矢量的取向將影響其輸運性質，巨磁電阻效應的發現開辟了磁電子學這一新的學科和研究領域。
分享友人
分享到 Line

分享到臉書