grain boundaries 中文意思是什麼

grain boundaries 解釋
晶界
  • grain : n 1 穀物，糧食〈英國叫 corn〉; 谷類植物。2 穀粒，籽粒。3 （沙、金、鹽等的）粒，顆粒，晶粒。4 些微...
  • boundaries : 邊界
  1. Beryllium powders with the same particle size and various contents of beo were prepared by pre - sintering - acid washing processes initiatively and the influence of beo alone on o mys of beryllium was observed and some new results have been obtained - compared with the content of beo, the distribution of beo in beryllium has more critical influence on mys ; finely dispersed beo along the grain boundaries and in the matrix results in the dispersion strengthening of beryllium matrix and thereby the higher mys value ; on the contrary, the coarser beo particles clustering on the grain boundaries results in negative influence on o mys

    開創性地用預燒結? ?酸洗工藝制備了相同粒度、不同beo含量的鈹粉，從而開展了beo含量單獨對鈹材_ （ mys ）影響的研究，得出一些新的結果：與beo含量相比， beo在鈹中的分佈狀態對_ （ mys ）的影響更大。沿晶界、晶內彌散分佈的較細小beo對基體鈹有彌散強化作用，使_ （ mys ）即較高；如果beo較粗大地成簇狀聚集在晶界，反而對_ （ mys ）有不良的影響。
  2. Impurities tend to segregate at grain boundaries.

    雜質常常在晶粒間界偏析。
  3. Two area defects are twins and grain boundaries.

    有兩種面積缺陷，即孿生和晶粒間界。
  4. This etchant can show different defects, such as dislocations, grain boundaries, twins, te - rich inclusions and precipitates etc., on different planes

    這種腐蝕劑能顯示不同晶面上的多種缺陷，如位錯、晶界、富te相等。
  5. This roughness occurs on a small scale, involving grain boundaries and failure surfaces.

    小規模的粗糙度涉及到顆粒邊緣和破壞表面。
  6. Based on these experiments, it may be claimed that there is segregation of sn to grain boundaries in 0. 15 % c steel during cooling from a high solution treatment temperature. this segregation reduces grain boundary cohesion, which results in low hot ductility and intergranular fracture

    通過試驗和計算得出: sn在0 . 1swt . % c鋼中發生非平衡晶界偏聚的臨界時間為1245左右，臨界冷卻速率大約為8 / s ，與試驗結果基本一致。
  7. Owing to the extremely small dimensions, nanometer materials are structurally characterized by a large volume fraction of grain boundaries or interphase boundaries, which exhibit some unique structural characteristics and novel properties with respect to the conventional coarsegrained polycrystalline materials

    由於納米粉體材料尺度極小，使之表面原子數、表面能急劇增加，產生了宏觀物體所不具有的表面效應、小尺寸效應、量子效應及宏觀量子隧道效應等新的性能。
  8. ( 3 ) solid solution with good solid solution ability were acquired by solid soluting treatment for 25 min at 540 c, 560 c and 580 c, respectively, after that water quenching was carried on. in the case of 580 c, the coarseness of the precipitation at grain boundaries did not happen, equi - part 120 did not emerge at the intersection of three grains, these suggest that over sintering did not happen

    6013合金實驗熱軋板材經固溶處理後於180時效4小時達到峰值硬度； （ 3 ） 540 、 560 、和580固溶處理25min 、水淬，得到了固溶充分的固溶體， 580的情況下晶界析出相未粗化、三晶粒交界處的角度未出現等分的120 ，表明未發生過燒。
  9. The shorter the interval between the two pulses of the current wave, the fewer strikes the varistors can endure. at the same time, the dc ljima changes fast - slowly - fast alone with the experiment continuing. microstructual disorder, such as variations in the height of the electrostatic potential at grain boundaries and electrode protrusions into the zinc oxide varistors, causes substantial temperature rise in a microscopic region around the defect and is the source for failure

    雷電的多重閃擊對雷電過電壓保護器件的影響更加嚴重，本文首次採用不同間歇時間雙脈沖電流沖擊對氧化鋅電阻進行了多次試驗，試驗表明：氧化鋅電阻在雙脈沖電流沖擊下更容易出現老化破壞現象，間歇時間越短，電阻能耐受的沖擊次數越少；此外，直流u _ （ 1ma ）值隨沖擊次數的增加具有快一慢一快的下降過程。
  10. Often the vortex pinning can be increased by making the individual crystallites ( or grains ) of the material smaller, thus increasing the surface area associated with grain boundaries, where vortices get pinned

    這是因為晶粒邊界面積的比例，會隨著晶粒的縮小而增加，而渦流就是固定在晶粒邊界上。
  11. The presence of small amount of liquid at grain boundaries tends to form thin viscous layer which surrounds the finer grains. intergranular fracture may occur at the grain boundaries between two fine grains not covered by viscous phases. the high ductility achieved at low strain rates is generally attributed to dislocation glide - creep accommodation mechanisms

    原始晶界上產生少量液相，形成薄的固液共存粘性層並包圍細化的晶粒，沿晶斷裂主要發生在無粘性層的細晶粒間；而在較低應變速率下，三叉晶界位錯攀援?蠕變協調機制鬆弛晶界滑移產生的應力集中，晶界上產生較多液相，有利於晶界滑移進行。
  12. Among them, 3 plates always lies in the grain boundaries. following the initial region, single p phase region and in2tes phase region are formed in order

    在晶錠末端形成in _ 2te _ 3單相區，該相區晶界處有te夾雜相。
  13. Bulk crystals of cd1 - xznxte with high quality are very difficult to obtain. commercial cd1 - xznxte crystals usually contain defects such as twins, sub - grain boundaries, dislocations, and te precipitates. these defects will seriously deteriorate the optical and electrical properties of the crystals

    為了提高晶體性能、減少或消除晶體缺陷，尤其是te沉澱和te夾雜，必須將cd _ （ 1 - x ） zn _ xte晶體在一定的溫度和氣氛條件下進行退火處理。
  14. Above analysis can provide instructions for grain boundary design and controlling in grain boundary engineering. dynamics intergranular fracture process is modeled with considerations of grain boundaries damage

    通過考慮晶界損傷，進一步對拉伸試樣破壞單元的動態沿晶斷裂過程進行了數值模擬分析。
  15. The essential effects of grain boundaries on signal transmission is that the resistivity from grain boundary is much more than that from grain inside, and the evidence of grain boundaries on signal transmission is resistance, capacitance and inductance characteristic of grain boundaries

    晶界的電阻率大於晶界兩側晶粒的電阻率是晶界影響線材傳輸性能的本質，晶界的電阻、電容以及電感特性是晶界對線材傳輸性能影響的具體表現形式。
  16. The electronic properties of hg _ ( 1 - x ) mn _ ( x ) te are dominated by defects, including native point defects ( vacancies, interstitials, antisites, and complexes ), extended defects ( all types of dislocations, grain boundaries, precipitates, melt spots, etc. ), and undesired impurities

    Hg _ （ 1 - x ） mn _ xte晶體的電學性能受缺陷的影響很大。晶體的缺陷主要有：原生點缺陷（空位、間隙原子、反位原子和復合體） 、擴散缺陷（各種位錯、晶界、沉澱相、低熔點相等）以及一些雜質。
  17. Effect of ionic vacancies on potential barrier at grain boundaries in batio

    鈦酸鋇陶瓷離子缺位對晶界勢壘的影響
  18. Defects such as extended dislocations, pile - ups of dislocation and grain boundaries ( twin boundaries ) were also investigated

    塗層中存在擴展位錯、位錯塞積列、 （孿）晶界等晶體缺陷。
  19. The distribution or the morphology of grain boundaries, dislocations and precipitates in crystalline silicon were observed by scanning infrared microscopy ( sirm ), and much useful information was obtained

    通過紅外掃描儀觀察晶體矽中的晶界、位錯和不同金屬沉澱的分佈和形貌，並分析其相關信息。
  20. In the theoretical simulation on the behavior of single helium atom in aluminum, the varieties of energy data including the formation, migration, binding, and dissociation energies for single helium atom at the interstitial, vacancy, grain boundary, and dislocation sites in aluminum lattice were calculated, based on the density functional theories, general gradient approximation and pseudopotential plane wave method. results showed that the most fittable sites for containing helium atoms inside the cell are vacancies. but in the view of the whole lattice, grain boundaries are the best

    計算結果表明，晶內he原子擇優佔位區是空位，而在整個晶體范圍，最有利於容納he原子的區域是晶界，位錯容納he原子的能力次於晶界和空位；在fcc -鋁的間隙位中， he原子優先充填四面體間隙位；晶內間隙he原子是可動的，通過間隙he原子的運動，可在晶內聚集，或被空位、晶界、位錯等缺陷束縛。
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