grain boundary 中文意思是什麼

grain boundary 解釋
金屬晶體之四邊
  • grain : n 1 穀物，糧食〈英國叫 corn〉; 谷類植物。2 穀粒，籽粒。3 （沙、金、鹽等的）粒，顆粒，晶粒。4 些微...
  • boundary : n 邊界，疆界，限界 （between）;（球場）邊線；界標；界限，范圍，分野。 aboundary dispute 邊界糾紛...
  1. The complex electrical properties of dunite were measured over the frequency range from 0. 1 - 106hz, at 1 - 3 gpa and 1282 - 1544k, and at the fo2 of mo - moo2. complex plane plots show separate effects of grain interior and grain boundary conductivity

    對顆粒邊界的電導率研究表明，顆粒邊界的電導率高於顆粒內部的電導率，總電導率則小於顆粒內部和顆粒邊界的電導率，顆粒邊界並沒有增強總電導率。
  2. Grain boundary reoxidation of barium titanate ceramics doped with lanthanum

    摻鑭鈦酸鋇陶瓷晶界的再氧化
  3. But the grain growth, grain semiconduction and grain boundary insulation were influenced by many factors, such as the type and contents of dopants, sintering temperature and so on. therefore, in this thesis the effect of the restore sintering temperature, the oxygenize temperature, the donor and acceptor dopant on the dielectric and varistor properties of devices were studied. with sem, the microstructure of srtio3 - based double function ceramic was analyzed

    而晶粒生長、晶粒半導化和晶界絕緣化受到多種因素的影響，諸如雜質的種類和含量、燒成溫度等，因此本論文研究了還原燒成溫度、中溫氧化溫度、施主和受主摻雜等對srtio _ 3基陶瓷的壓敏和介電性能的影響，並藉助于sem分析對srtio _ 3基雙功能陶瓷的微觀結構進行了分析。
  4. Based on these experiments, it may be claimed that there is segregation of sn to grain boundaries in 0. 15 % c steel during cooling from a high solution treatment temperature. this segregation reduces grain boundary cohesion, which results in low hot ductility and intergranular fracture

    通過試驗和計算得出: sn在0 . 1swt . % c鋼中發生非平衡晶界偏聚的臨界時間為1245左右，臨界冷卻速率大約為8 / s ，與試驗結果基本一致。
  5. The measuring of low - temperature specific heat is an important and effective method to study the structure of electronic states, the atomic vibration of lattice, phase transition and structure of grain boundary

    低溫比熱測量是研究固體的電子能態結構、原子點陣振動狀態、相變、界面結構等信息的重要的且很有效的手段之一。
  6. The grain boundary fracture behavior in ni - base bicrystals

    鎳基雙晶體晶界斷裂特性研究
  7. Shielding effect at ni - base bicrystals grain boundary

    一種鎳基雙晶材料疲勞裂紋擴展效應
  8. Stress distribution near grain boundary in anisotropic bicrystals and tricrystals

    各向異性雙晶和三晶體晶界附近應力場分析
  9. Here the conductance, carrier concentration and hall mobility ect parameters of er doped cdte films have been given. using seto model, we calculate the grain - boundary barrier of er doped cdte films and analyze the varing dose influence on the grain - boundary resistance

    討論了不同er離子注入量對硅基底上沉積的cdte薄膜結構和光電性能的影響，並具體給出了摻雜cdte多晶薄膜的電導、載流子濃度及遷移率等參數值。
  10. The microstructure in this system shows randomly oriented fine plate - shaped grains with multi - layered structure. the fine grains randomly oriented ( strong grain boundary scattering ) and pores in these sintered samples could decrease the electrical conductivity. however, on the other hand, the fine grains randomly oriented and pores could lead to a dramatic decrease in the thermal conductivity

    燒結樣品的顯微結構由具有多層片狀結構的顆粒組成，材料的顯微結構直接影響到材料的電導率和熱導率，細小顆粒和氣孔的存在會引起電導率的降低，同時也能降低材料的熱導率，優化材料顯微結構是提高材料的熱電性能的關鍵步驟。
  11. All main ways of metal strengthening including grain refining strengthening, dislocation strengthening, grain boundary and substructure strengthening, second phase strengthening, solid solution strengthening, as well as trip strengthening and so on, have totally found expression in the adi

    金屬強化的幾種主要方式：細晶強化，位錯強化，晶界與亞結構強化，第二相強化，固溶強化，細晶強化以及trip強化等都在等溫淬火球鐵中得到了體現。
  12. So re oxides has two form existence, one is concentrate on the matrix equiaxial crystal grain boundary as a micron particles and the other is distributed in matrix crystal dispersively as the nanometer particles compared the electron emission performance of mo - la2o3, mo - ; la2o3 - y2o3 and mo - la2c > 3 - sc2o3 cathode, the mo - la2o3 - sc2c > 3 cathode show excellent electron emission character

    上述研究表明不論是在稀土?鉬陰極還是在稀土?鎢電極中，稀土氧化物的存在形式有兩種，一種是微米級的顆粒偏聚于晶界處，另外一種是彌散分佈於基體晶粒的納米小顆粒。
  13. Stress distribution near cavity on grain boundary

    多晶體材料晶界孔洞應力場分析
  14. Recent studies of grain boundary internal friction

    晶界內耗的研究
  15. Applications of grain boundary design in polycrystalline metals

    晶界設計在多晶體金屬材料中的應用
  16. Effects of strain of grain boundary migration in nanocrystalline copper

    應變對納米銅晶界遷移的影響
  17. The electronic - ceramic capacitive - type sensor for coi is based on the nanometer and semiconductor theories. according to the mechanism of the gas surface absorbing actions and the mechanism of grain boundary effect of semiconductors, the capacitance of the sensor can be changed with the variation of co2 concentration

    Co _ 2氣敏陶瓷電容型傳感器將納米理論和半導化理論引入了傳感器的研製過程中，這種傳感器通過氣體表面吸附，及在半導體介質的晶界層產生的晶界效應，使得不同濃度co _ 2氣體產生不同的電容值。
  18. With carbon content increasing, the carbide network on the fertile grain boundary sprouting and propagating. the fracture mode has been changed from cleavage to along boundary and the intergranular corrosion induced by solution chromium decreasing

    隨碳含量提高，晶界上碳化物萌發、擴展呈網狀，鑄件脆斷由解理斷裂發展為沿晶斷裂，同時鐵素體不銹鋼晶間腐蝕傾向增大。
  19. The micromorpholgy and grain boundary microstructure of the material were studied with sem and tem and the grain boundary phase composition were analyzed with eds and x - ray the mechanical properties, micromorpholgy microstructure of grain boundary and phase composition of al2o3 composite ceramics were systematically studied, the effect of additives, the relationship between microstructure and mechanical strength, the sintering mechanism of the material and influence factors of the structure and properties of al2o3 composite ceramics were discussed respectively

    系統研究了氧化鋁陶瓷的力學性能、微觀形貌、晶界顯微結構，並討論了各添加組分的作用、材料顯微結構與力學性能的關系以及材料的燒結機理和影響材料結構與性能的影響因素。本論文探討了氧化鋁基復相陶瓷的強韌化機理，實驗表明al _ 2o _ 3 - ticn體系主要是微裂紋韌化。
  20. The crystal grain boundary of v2o5 films was melted and disappeared as increasing the deposition temperature, and the crystalline v2o5 films can be obtained by deposition at > 300. these films showed excellent cathode and anodic electrochromic performance at different wavelength region

    而襯底溫度升高促進薄膜晶體顆粒長大、熔結，晶粒邊界消失，在較高襯底溫度（ 300 400 ） ，得到連續的結晶性能良好的v _ 2o _ 5薄膜。
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