grain plane 中文意思是什麼
grain plane
解釋
分離面-
The complex electrical properties of dunite were measured over the frequency range from 0. 1 - 106hz, at 1 - 3 gpa and 1282 - 1544k, and at the fo2 of mo - moo2. complex plane plots show separate effects of grain interior and grain boundary conductivity
對顆粒邊界的電導率研究表明，顆粒邊界的電導率高於顆粒內部的電導率，總電導率則小於顆粒內部和顆粒邊界的電導率，顆粒邊界並沒有增強總電導率。 -
Sem results show tin films appear compact and plane in different n2 partial pressure, and there is no big crystal grain appearance on the surface of tin films. tem and afm results tin films have the column structure, and the surfaces of the films are accumulated by crystal grain. in the second part of the thesis the effect of heat treatment processing on the optical properties and structure of the tin films is studied
Tem測試結果顯示，薄膜表面是由tin晶體顆粒堆積在一起，呈柱狀結構afm測試結果表明， tin薄膜呈柱狀結構；在氮氣分壓較小時， tin薄膜表面比較平整，顆粒細小；隨著氮氣分壓的增加， tin薄膜表面顆粒逐漸增大；相同氮氣分壓下，氬氣分壓較小時制備的tin薄膜較為緻密。 -
In the theoretical simulation on the behavior of single helium atom in aluminum, the varieties of energy data including the formation, migration, binding, and dissociation energies for single helium atom at the interstitial, vacancy, grain boundary, and dislocation sites in aluminum lattice were calculated, based on the density functional theories, general gradient approximation and pseudopotential plane wave method. results showed that the most fittable sites for containing helium atoms inside the cell are vacancies. but in the view of the whole lattice, grain boundaries are the best
計算結果表明，晶內he原子擇優佔位區是空位，而在整個晶體范圍，最有利於容納he原子的區域是晶界，位錯容納he原子的能力次於晶界和空位；在fcc -鋁的間隙位中， he原子優先充填四面體間隙位；晶內間隙he原子是可動的，通過間隙he原子的運動，可在晶內聚集，或被空位、晶界、位錯等缺陷束縛。 -
First, total resistance is derived by summing different resistance components. the relationship between resistance of still plane bed and energy slope has been proposed from the similarity between sediment incipient motion and still bed resistance. and this relationship can be used in computing grain resistance
一是從不同的床面阻力單元出發，利用泥沙起動與定床阻力之間的相似性研究了靜平整床面的阻力，建立了靜平整床面阻力與能坡之間的關系式，並將此式用於沙粒阻力的計算。 -
In contrast, the lcmo thin films grown on lao substrates show an in - plane compressive stress. the afm images suggest that at the annealing temperature range between 650 and 750, with the annealing temperature increase, the grain sizes increase, the rms increase
沉積在sto基片上的lcmo薄膜在面內方向受張應力作用，垂直方向上的晶格常數相對縮小，沉積于lao基片上的lcmo薄膜在面內方向受壓應力作用，垂直方向上的晶格常數相對增大。
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