grid capacitance 中文意思是什麼

grid capacitance 解釋
柵極電容
  • grid : n 1 格子，格柵。2 （蓄電池的）鉛板。3 【無線電】柵級。4 鐵道網；【電學】電力網；〈英國〉（全國）...
  • capacitance : n. 【電學】電容；電容器。
  1. With the use of finite method we have developed computer simulation software for vacuum microtriodes with wedge - shaped and cone - shaped cathode on the basis of stduying deeply the field emission theory of vacuum microelectronics. the software included field section, grid point numbering, and the calculation of electric currents, transconductance and cathode capacitance, moreover, it can simulate the properties of vacuum microeletronic with variant structures and sizes. the relationship was studied and simulated among electic properties and device structures, sizes and cathode materials etc. the optimized design of vacuum microtiode was proposed

    本文在深入研究真空微電子器件場致發射理論的基礎上，根據圓錐形、楔形陰極真空微電子三極體的不同特點，分別建立了物理和數學模型，在考慮空間電荷密度影響的前提下，以有限元法為基礎採用迭代的方法計算出真空微電子三極體內的電勢分佈情況，繪制出了等勢線、電子軌跡線，並得到了器件電學性能隨幾何參數的變化情況。
  2. This article introduces briefly the process of design and characteristic of structure of db930 tube and discusses the main problems of technology and technique which was met during the manufacture and the measures having been adopted are emphatically. it discusses the solve measures in following six aspects : the filament current is too large, carbon deposits during the carbonizing of cathode, the capacitance between the first grid and the second grid is too large, transpiring happens inside the tube, the insulation resistance between the electrodes is too lower when the filament is on and the ability of bearing high voltage is too lower

    本文簡略地介紹了db930的設計過程及其結構特點，重點論述了在試制過程中遇到的主要工藝技術問題及解決問題的措施，圍繞解決燈絲電流大、陰極碳化時積碳、一柵和二柵之間的電容大、管內蒸散、熱態時極間絕緣低、耐高壓的能力差等六個方面的問題進行了論述。
  3. Grid filament capacitance

    柵極燈絲電容
  4. It is believed that p - si tft will be the main type in the future panel display. among the process of manufacture p - si tft, the source and drain will have the superposition with grid for the reason of machine ’ s alignment error. the superposition will bring superposition capacitance and it will badly cut down the electric performance

    在制備多晶硅tft時，由於機器的套準誤差會在柵極與源、漏極之間產生重疊部分，這樣就造成了柵源、柵漏之間的交疊電容，交疊電容的存在嚴重影響了多晶硅tft的性能，而利用自對準工藝制備的多晶硅tft則避免了交疊電容的產生。
  5. Capacitance extraction for power grid of high speed integrated circuits

    高速集成電路電源網路的電容參數提取
  6. Grid input capacitance

    柵極輸入電容
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