grown film 中文意思是什麼

grown film 解釋
生長膜
  • grown : adj. 1. 已成長的,成熟的。2. 被…長滿的。
  • film : n 1 薄層,薄膜;薄霧,輕煙;細絲狀的東西。2 【攝影】感光乳劑,照相軟片,電影膠片;影片。3 〈 pl ...
  1. Moke and fmr studies were performed on single crystalline fe ultathin films epitaxially grown on iii - v semiconductor gaas substrate with thickness 4. 1 - 33 monolayer ( ml ). a theoretical mode for fitting fmr experimental data was established. the results demonstrated the structures and reproduced the evolution of the magnetic properties of ultrathin films with various thickness from the state of superparamagnetic nano - cluster through coexistence of two magnetic phases to continuous film, especially the change of magnetic crystalline anisotropy from unixial to cubic

    1 - 33原子層厚度( monolayer ,簡稱ml )的fe單晶超薄膜進行了鐵磁共振( fmr )和磁光研究,建立了理論模型對鐵磁共振實驗結果進行了模擬,重現了不同厚度的超薄膜,從納米團簇到兩相共存的過度階段直至連續薄膜結構與磁性的變化,特別是磁各向異性從單軸各向異性向立方各向異性轉變的演化過程。
  2. Besides, the growth of gasb expitaxy film was monitored by reflection high energy electron diffraction ( rheed ). the rheed images and intesity oscillation are collected by computer system. it showed that the gasb film prepared in 400 was amorphous and it became monocrystalline when the temperature rose to 500. atomic force microscope ( afm ) was applied to analyse the surface morphology of the films which were grown in diffrent growth rates or substrate temperature. the analysis were compared to simulation results. the experiment results indicated it was easy to form clusters when the rate of growth is high or

    此外,本文通過反射式高能電子衍射( rheed )監測了gasb外延薄膜的生長,利用rheed強度振蕩的計算機採集系統實現了rheed圖像和rheed強度振蕩的實時監測。實驗發現在400生長的gasb薄膜為非晶態,溫度升高到500薄膜轉變為單晶。利用原子力顯微鏡對不同生長速率和襯底溫度生長的gasb薄膜的表面形貌進行觀察分析,並與模擬結果進行比較。
  3. It is desirable to develop a routine method for determining the depth profile of the ge concentration in a grown film

    這就需要發展一種決定在生長薄膜中鍺濃度縱向分佈的常規方法。
  4. Growth rates of between 0. 25 and 1. 3μm/min were reported with the c axis of hexagonal zno grown on(0112)-oriented al2o3 lying in the plane of the film

    據報道,在(0112)取向的Al2O3襯底上生長C軸位於薄膜平面上的六角晶體ZnO的情形中,其生長速率在025mmin和13mmin之間。
  5. The films have a smooth and glossy surface. the result of xrd shows that the film demonstrates good properties of integrity, epitaxial - like grown and no other impure phase

    所得薄膜表面平整、光滑且厚度均勻,經xrd測量,結構完整,無其它雜相,基本為外延生長。
  6. The bst thin film grown on porous silicon substrate has been investigated for the first time. experiment results indicate that the porosity of porous silic

    探索碩究了用脈沖檄光沉積的方法在多孔硅襯底上制備bst薄膜。
  7. The diamond film is grown using a hot filament chemical vapor deposition, basing on the diamond micro - grits on silicon substrates

    實驗中外延金剛石薄膜採用熱絲cvd法生長,生長於事先電泳沉積在硅襯底的金剛石微粒上。
  8. A ) si thin film with sub - micro thickness was epitaxial grown on heavy - doped si substrate by ultra high vacuum chemical vapor deposition ( uhv - cvd )

    A )利用超高真空化學氣相沉積( uhv - cvd )技術在重摻si襯底上生長高晶體質量的亞微米級薄硅外延片。
  9. Incorporated in 2004, shenzhen toonring animation film co., ltd. is a member of shenzhen film television & animation industry association, as well as a civil - run animation enterprise having grown up locally in shenzhen integrating original creation and cartoon brand operation

    深圳市唐人動畫影業有限公司,成立於2004年,深圳市影視動畫行業協會會員,公司總部位於深圳市繁榮商業中心的福田區,在上海設有銷售分公司。
  10. Results show that the empty and porous balls of tio2 were grown on the surface of fine tourmaline particles dispersing in the tio2 film based on the copper net, under the effect of the nature electric field of fine tourmaline particles

    用溶膠?凝膠技術在紫銅網表面成功生長電氣石tio _ 2復合薄膜,該復合膜中電氣石微粒表面形成了tio _ 2空心球簇結構和tio _ 2層狀微粒簇結構。
  11. After transport property measurements, it is found that there is 80k deference between the two cusp temperatures in resistivity - temperature curves ( tm - i ) of the two films grown on srtio ( 001 } and ndgao ( 110 ). at the same time, the resistivity of the film on srtio ( 001 } is 50 times higher than that of the film on ndgao ( 110 )

    分別生長于srtio大00 )及ndgao人110 )上,並分別介紹其性質,對各自電阻,磁阻變化進行了解釋;然後對比二者輸運性質之間的各種差異(金屬絕緣體轉變點的電阻率分別為13和0
  12. Aluminum film was grown on modified fluorinated polymer composite films by rf magnetron sputtering

    摘要採用射頻磁控濺射技術在改性氟塑料表面沉積鋁層,制備了金屬氟化高聚物復合薄膜。
  13. For solution with certain compositons, it behaved as the growing temperature tg. when tg. is too high, the film was hard to grown or did n ' t grow well

    而對于確定r值的熔液,則主要表現為過冷度的選取,也即生長溫度的選取。
  14. The diamond film is grown on the horizontal power diodes as their heat sink

    將金剛石薄膜應用於功率二極體(橫向)的熱沉。
  15. ( 4 ) taking bamoo4 thin film as an example, the processing conditions and the formation mechanisms of molybdate and tungstate thin films by electrochemical technique, and the optimum processing conditions of the two kinds of as - grown thin films above - mentioned were obtained

    ( 4 )以bal討oq為例,首次系統全面的研究了電化學制備鋁酸鹽、鎢酸鹽薄膜的工藝剎牛及其電化學咸次莫機制,得出了電化學制備上述兩大系列薄膜的優化工藝路線。
  16. The excellent field emission characteristic of the low temperature grown p - sic film was experimentally and theoretically pursued with well result

    在對卜sic場電子進行理論研究基礎上,比較測量的結果,表明低溫b七薄膜具有優異的場電子發射特性。
  17. The bzt thin film has good properties in high frequency. the essential principle, technology process and advantages of the ba ( zr0. 3ti0. 7 ) o3 ( bzt ) ferroelectric thin films grown on pt / ti / sio2 / si substrates and quartz substrates by sol - gel process are introduced. the heat - treatment technology was fixed according to the dsc - tg measurement, afm ( atomic force microscope ) and fe - sem ( field emission - scanning electrical microscope )

    我們通過在pt / ti / sio2 / si襯底和石英襯底上制備ba ( zr0 . 3ti0 . 7 ) o3鐵電薄膜,了解了溶膠-凝膠法( sol - gel )制備薄膜的基本原理、工藝過程及工藝特點;並對所制得的ba ( zr0 . 3ti0 . 7 ) o3薄膜的前驅體溶液和干凝膠進行了差熱與熱失重( dsc - tg )分析,確定了溶膠在熱處理各個階段的反應情況。
  18. Also shown by afm images are the regular features of crystals and ordered crystal domains for the film grown on 200 substrates, the morphologies indicate a phase transition, which is clearly confirmed by contrast between ( 0, 0 ) and ( 0, 1 ) absorption features and the bathoshift of ( 0, 0 ) absorption peak corresponding to the temperature of the substrate

    Afm圖像同時顯示,在200的襯底上生長的薄膜具有規則的晶體外型和有序排列的微疇,說明存在結晶轉變。 f - ptcdi薄膜的吸收光譜的( 0 , 0 )和( 0 , 1 )性狀的強度對比與紅移程度隨襯底溫度的變化清晰地表現出150到200之間存在一個相變, dsc測試說明該轉變是從低有序到高有序度的轉變。
  19. In the end thin film ybig was grown onto substrate ybilg. then the structure and component of these films were measured and anaslysed by the measurements such as xrd, sem, epma, etc

    Ybiig 、 ybig系列石榴石薄膜的生長、測試結果表明,晶格失配度對lpe外延成功與否起重要作用。
  20. The xrd results show that the sputtered lcmo film grains are grown epitaxially, when the lattice mismatch between film and substrate is small. the lcmo thin films grown on sto substrates show an in - plane tensile stress

    Xrd的研究結果表明,當基片與lcmo薄膜間的晶格失配度較小時,薄膜和基片具有一致的晶格取向,薄膜具有較好的外延結構特徵。
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