growth lattice 中文意思是什麼
growth lattice
解釋
生長格架-
Then the structure unit of hexangular lattice is found according to the principle of invariable symmetry. renormalization transformation is processed when we regard the structure unit and the growth model as graphs before and after transformation respectively. after choosing the 11 thermodynamic function fugacity as parameter, we can write out the partition functions before and after transformation and the formula of renormalization transformation
然後根據對稱性不變的原則，從整體晶格中選取結構單元，把結構單元和生長模型分別作為重整化變換前、后的圖形來進行重整化變換，選取熱力學函數易逸度為參量，寫出了重整化變換前後的配分函數和重整化變換關系式，求出了這一變換的不動點。 -
The crystallization and melting behavior of mellocene - catalized branched and linear polyethylenes of low molecular weight was studied. it was found that the crystalline lattice of branched polyethylene is larger than that of linear polyethylene because of the existence of branched chains. the melting behavior of branched polyethylene is similar to that of linear polyethylene since the branched chains can not enter the lattice. however, the crystalline behavior of low molecular weight branched polyethylene is the same as that of high molecular weight linear polyethylene, but different with that of low molecular weigh linear polyethylene. kinetics theory analysis evidenced that the transition temperature of growth regime of the branched polyethylene is about 20 lower than that of linear polyethylene with the same molecular weight. it may be attributed to the existence of short branched chains
研究了金屬茂催化的低分子量支化聚乙烯和線性聚乙烯的結晶及熔融行為，發現支化聚乙烯的結構與線性聚乙烯相同為正交結構，但晶格略有膨脹.支鏈的存在對熔融行為影響不大，兩種聚乙烯的熔點均隨結晶溫度的升高而非線性增加，表現出低分子量樣品的共同特徵.但支鏈的存在對結晶行為卻有很大的影響，主要是由於支鏈的存在降低了晶體的結晶速率從而影響結晶過程，使得低分子量的支化聚乙烯的結晶行為與高分子量線性聚乙烯的結晶行為相似而與低分子量的線性聚乙烯不同.動力學分析表明，低分子量的支化聚乙烯的結晶生長方式的轉變溫度比同等分子量的線性聚乙烯降低了約20 -
To solve the problems that follow the growth of data, we propose to build the mathematical model of distributed concept lattice by taking advantage of its qualities of solid mathematical basis and the adaptability to distributed process 2 ) the mathematical basis of concept lattice is introduced, which includes the definitions of order theory and lattice theory related to concept lattice
本文內容如下： （ 1 ）介紹了數據挖掘產生的背景，針對隨著數據量的不斷增大而產生的問題，提出利用概念格所具有的良好的數學性質和適合批處理等特點，建立分散式概念格的數學模型。 （ 2 ）介紹了概念格的數學基礎，包括與概念格模型相關的序論和格論中的一些定義。 -
Usually, gaas is employed as substrate for the growth of wide band - gap ii - vi semiconductors due to their similarities in lattice constant. however, as a mature semiconductor material, si has serves electronics greatly
以往的寬帶-族半導體都是以gaas為襯底材料的，這就造成了寬帶-族半導體光電子材料與si基微電子技術的分離。 -
A lattice kinetic monte carlo model for nano - crystal growth
納米晶粒生長的動力學蒙特卡羅模型 -
The effect of lattice mismatch on the nucleation process of heteroepitaxial growth of ultrathin film
晶格失配對異質外延超薄膜生長中成核特性的影響 -
Main research contents and achievements of this thesis is as follows : l. this paper carries through particular test and analysis to the basic physical - chemical properties of gaojiawang palygorskite, an environmental mineral fibre, by xay, ir, tem, sem etc. this paper has also discoursed upon the development appliance research status in quo and directions of palygorskite. 2. according to the preceding surface modification research achievements to nonmetal mineral materials, the author combines the self characteristics of palygorskite such as the ratio of length and diameter, typical nano - rank particle diameter, big ratio surface area, well - developed crystal growth imperfection and lattice defect etc. the author also designs organising modification ortho - experimentation of palygorskite by adopting iso - propyl alcohol as thinner of wd - 51 and ndz - 401, and acquires the best craft parameters and craft conditions for gaojiawang palygorskite original ore organising modification, namely : wd - 51 concentration 1. 6 % ( wt % ), modification temperature 120 ?, and modification time 60 mins ; ndz - 401 concentration 2. 0 % ( wt % ), c modification temperature 120, modification time 80 mins
在前人對非金屬礦物材料表面改性的基礎上，結合環境礦物纖維?坡縷石自身的特點（如：長徑比、典型的納米粒徑、大比表面積、發育的晶體生長缺陷和晶格缺陷等） ，通過對坡縷石有機化改性設計正交試驗，採用（ ch _ 3 ） _ 2choh作為稀釋劑，獲得了採用wd - 51和ndz - 401對高家窪坡縷石原礦進行有機化改性的最佳工藝參數和工藝條件，分別為： wd - 51的濃度為1 . 6 （ wt ） ，改性溫度為120 ，改性時間為60min ； ndz - 401的濃度為2 . 0 （ wt ） ，改性溫度為120 ，改性時間為80min 。 -
The theoretical calculation and explanation of strain behavior during heteroepitaxy of oxides thin films : when the lattice mismatch is relative small ( for example, batio _ 3 / srtio _ 3 with a lattice mismatch of 2. 18 % ), the growth mode of thin films is layer - by - layer, and the critical thickness and strain relaxation can be calculated or estimated by matthews - blakeslee expressions ; when the lattice mismatch is large ( for example mgo / srtio _ 3 with lattice mismatch of 8 % ), the strain relaxation process can be explained by theory of coherent strained islands
氧化物薄膜異質外延應變行為的理論預測和解釋。對于晶格失配較小的外延體系（如batio3 / srtio _ 3 2 . 18 % ） ，薄膜以層狀方式進行生長，臨界厚度和應變釋放過程可以用經典的matthews - blakeslee公式進行預測;對于晶格失配較大的體系（如mgo / srtio _ 3 8 % ） ，薄膜以島狀方式進行生長，應變釋放過程可以由彈性應變島的理論體系進行解釋。 -
The heteroepitaxial growth of 3c - sic on si substrate not only unfurls the maturity of si process, but also incarnates the excellence of 3c - sic, so that it become for long researchful direction. due to the large lattice parameter mismatch ( ~ 20 % ) and the large thermal expansion coefficient mismatch ( ~ 8 % ), however, the 3c - sic / si study is very difficult
然而，由於3c - sic與si之間存在較大的晶格失配度（約20 % ）和熱膨脹系數差異（約8 % ） ，因此， 3c - sic / si異質外延薄膜的制備非常困難，仍存在許多技術問題需要克服。 -
It possess many of the physical properties such as high atomic number ( z ), large enough band gap, high resistivity, relatively low leakage currents, and high intrinsic mobility - lifetime ( ut ) product, which are required for room - temperature nuclear radiation detectors. so it is widely used in nuclear medical imaging system, space engineering, and astrophysics, environmental monitoring, and so on. in addition, it is the best substrate for lattice matched epitaxial growth of hg1 - xcdxte ( mct ) thin films and solar cells
用單晶czt製成的探測器可在室溫下工作，工作溫度范圍寬（ - 20 40 ） ，能量探測范圍寬（ 10kev 6mev ） ，對x射線、射線能量解析度高，在x射線、射線成像、天體物理研究、工業探測、安全檢測、核輻射探測、核廢料監控、 x射線熒光分析（ xrf ） 、 x射線斷層掃描和核醫學等方面有重要用途。 -
Over coming lattice and orientation mismatch, direct wafer bonding allows fabricating of structures and devices which can ? get through hetero - epitaxial growth
利用鍵合技術可以集成晶格或晶向失配的材料，製造傳統外延生長技術不能製造的結構和器件。 -
Off - lattice kinetic monte carlo simulation of initial stage of tin film growth
薄膜生長過程中孔洞填充的蒙特卡羅模擬
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