growth mechanism 中文意思是什麼

growth mechanism 解釋
成長機理
  • growth : n. 1. 生長,成長,發育,發展。2. 栽培,培養。3. 生長物,產物;【醫學】瘤,贅生物。4. 【經濟學】(資本價值與收益的)預期增長。
  • mechanism : n 1 (機械)結構;機械裝置[作用];(故事的)結構。2 【哲學】機械論 (opp vitalism)。 3 【文藝】...
  1. Studies on the preparation of aragonite whisker and its growth mechanism are meaningful at theory and practice to develop traditional calcium carbonate industry, new materials and theory of crystal growth

    制備文石相碳酸鈣晶須的研究對促進我國傳統碳酸鈣產業、新材料的開發以及晶體生長理論的發展都具有重要的理論意義和實踐意義。
  2. With the plant bionomy the tree ' s growth mechanism is analysed. tree ' s growth model and data structure are builded, and the way of traversaling is advanced

    本文從植物生態學角度出發,根據樹的生長原理,建立生長模型及相應的數據結構,並提出該結構的遍歷演算法。
  3. The al matrix composites by reaction synthesis put up high mechanical behavior, well high - temperature properties and excellent wearing quality but the existent difficulties lie in that homogenizing method is not perfect, fundamental research to growth mechanism is absent and the concomitance compound come from reaction is difficult to eliminate at present

    反應合成的鋁基復合材料具有常溫力學性能高、高溫性能好和耐磨性突出的優點,而存在的主要研究難題則是整個材料均質化方法不理想、生長機制等基礎理論研究缺乏、反應伴生的化合物難以控制等。
  4. Microstructure changes and growth mechanism of hypoeutectic al - si alloy solidified at high pressure

    合金的組織變異及生長機制
  5. Presently, the nucleation and growth mechanism of diamond has n ' t been known completely. thermodynamically, the nucleation and growth of diamond at low temperature and low pressure is still considered as a paralogism

    目前金剛石的熱力學成核及生長機理尚不完全清楚,金剛石在低溫低壓下的成核和生長,仍被認為是一種熱力學的「悖論」 。
  6. Processing and growth mechanism of al - doped rutile single crystal by flame fusion method

    單晶體焰熔法生長實驗及機理
  7. Scientific computing study on growth mechanism of spinel

    尖晶石晶體生長機理的科學計算研究
  8. Using v2 & 5 and alkylamines ( cs - cao alkyl chain ) as precursor, vanadium oxide nanotubes which have an unique structure that alkylamines intercalate into layers of tubes wall affecting the layer spacing were prepared. their layers spacing ranges from 1. 25 nm to 3. 82 nm according to the length of alkyl chain. moreover, the growth mechanism of vanadium oxide nanotubes have been investigated and 3 - 2 - id model was established to interpret the vanadium oxide nanotubes growth process. potassium niobate is a functional materials which can be used as photochemical catalysts. lt is well known that the catalytic activites are affected greatly by the surface area of catalyst particles on which the reaction take place

    以系列烷基胺和五氧化二釩為原材料,通過簡單的水熱反應合成出了氧化釩納米管,這種納米管結構獨特,烷基胺作為模板劑內嵌入納米管管壁層間,成為支持納米管的骨架,並影響層間距大小,納米管管壁層間距隨著烷基胺碳鏈長度的不同在很大范圍內變化,通過採用不同碳鏈長度的烷基胺( c _ nh _ ( 2n + 1 ) nh _ 23 n 20 )作為模板,來控制氧化釩納米管的層間距,層間距可調控范圍從1 . 25nm到3 . 82nm 。
  9. Such problems as small amount of subsidy, lack of stable growth mechanism, confusion of subsidy standard etc exist in the present financial subsidy for agriculture in our country

    我國當前的財政農業補貼就存在這樣那樣的問題,如補貼總量小、穩定增長機制尚未形成、補貼標準混亂等。
  10. The thesis also thinks that the corporate adaptive growth mechanism is the key system to let the organization co - evolve with its environment. to begin from the mechanism, it sets up that the operational mechanism of adaptive growth is mixed by sense - mechanism, response - mechanism and sustainable one

    指出企業適應性成長的運作機制是企業組織適應環境並實現與環境持續協同進化的神經系統,從機制分析入手,提出組織適應性成長的運作機制是由感應機制、靈活反應機制、持續成長機制構建的一個柔性超循環系統。
  11. The growth mechanism of - sic nanowires networks is discussed

    並討論了納米線網的生長機理。
  12. Summary on the growth mechanism of crystal

    晶體生長機理的研究綜述
  13. In addition, the growth mechanism on porous silicon has been discussed in view of growth kinetics

    從晶體生長動力學角度分析了多孔硅上外延硅的生長機理。
  14. In this paper, the present situation and development of the research on growth mechanism of crystal are also discussed

    對晶體生長機理的研究現狀和發展趨勢予以了討論。
  15. Chapter five introduces the detail technics process of synthesis of carbon nanotubes by using liquid - hydrocarbon diffusion flame. chapter six discusses and analyzes the effects of every technics paramenters on the nanotubes produced by using liquid - hydrocarbon diffusion flame. chapter seven analyzes the sem and tem micro - appearances of the nanotubes produced by liquid - hydrocarbon diffusion flame and draws the conclusion of the nanotubes " cluster growth mechanism. chapter eight analyzes the sem and tem micro - appearances of the nanofibes produced by liquid - hydrocarbon diffusion flame, and considers that the growth mechanism of nanotubes and nanofibers is different

    第六章討論和分析了液態碳氫化合物燃料擴散火焰法制備碳納米管時具體各項工藝參數的影響。第七章分析了擴散火焰法制備碳納米管的sem形貌和tem形貌,歸納出碳納米管團簇生長的規律。第八章對六種基板材料在擴散火焰中制備出的碳納米纖維的sem形貌和tem形貌作了分析討論,認為擴散火焰法制備碳納米管和碳納米纖維的形成機理不同。
  16. Crystal morphology and growth mechanism of sphalerite crystallites were studied by formulating the mathematical model and calculating the stability energy of the growth units on the basis of the theoretical model that the growth units are polyhedral structure of coordinative anions

    摘要本文從負離子配位多面體生長基元模型出發,建立了閃鋅礦晶體生長基元的數學模型,通過對閃鋅礦晶體生長基元穩定能的計算,討論了閃鋅礦的結晶形態和生長機理。
  17. And considerable work has been done hi the growth behaviour in the tetrachloride solution concluding studies of crystal growth and growth kinetics. a crystal of dimensions 20mm x 20mm x 1mm was produced hi the tetrachloride solution by lowing temperature. and bcf spiral growth mechanism for the surface diffusion model was analyzed using the kinetic data

    本文以苯為溶劑溶液降溫法培養出了60mm 40mm 3mm大尺寸hhm單晶;另外探討了hhm在四氯化碳溶液中的生長行為,溶液降溫法培養出了20mm 20mm 1mm的較大尺寸單晶,並用動態循環體視顯微鏡觀察法測定了其在不同的過飽和下主要顯露晶面的法向生長速率,在較大過飽和度范圍內考察了其bcf表面擴散螺位錯生長機制。
  18. The main conclusions are summarized as follows : classical nucleation and growth mechanism only occurs near the phase boundary of the disordered phase, by which 8 " phase precipitates from supersaturated solid solution directly

    主要研究發現:只有處在無序相界附近的合金沉澱機制基本為經典形核長大,相直接從過飽和固溶體中沉澱,序列為:過飽和固溶體化學計量比相長大。
  19. The research indicates that the microscale spiral ( vortex ) growth dislocation is another important growth mechanism of pteria penguin and blister pearl from sanya, hainan province

    通過對該珍珠層的表徵與示蹤,初步證實微尺度螺旋(渦旋)生長位錯是海南三亞企鵝貝及其附殼珍珠又一重要的生長機制。
  20. Silicon nitride ( normally si3n4 ) has been widely used in such fields as micro - electronics and optoelectronics as a promising film material because of its excellent property. many researches have been made on silicon nitride, especially on preparation for it with all kinds of cvd ( chemical vapor deposition ). but the growth mechanism and kinetics of direct - nitridation in nitrogen are not investigated in detail, especially few work has been done on direct - nitridation of silicon wafer in nitrogen during heat treatment

    氮化硅( si _ 3n _ 4 )具有許多特殊的優越性能,是一種前景廣闊的薄膜材料,並已廣泛應用於微電子、光電子領域,人們對此做了大量的研究,但主要集中在用各種化學氣相沉積的薄膜制備上,對直接氮化法的機理和動力學研究較少,特別是矽片在氮氣保護的熱處理條件下的直接氮化行為研究更少,甚至對矽片在熱處理條件下能否與惰性的氮氣發生反應等問題依然存在爭論。
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