growth nucleation 中文意思是什麼

growth nucleation 解釋
生長核形成
  • growth : n. 1. 生長，成長，發育，發展。2. 栽培，培養。3. 生長物，產物；【醫學】瘤，贅生物。4. 【經濟學】（資本價值與收益的）預期增長。
  • nucleation : n. 【物、化】成核（現象）；晶核過程，核子作用；集結；人工降雨作用。
  1. Various chemical strategies have been introduced to the system to affect the dynamics of reaction, and thus, to adjust the nucleation and growth process. by using appropriate complexing agents as controlling reagents and adjusting the reaction temperature, both morphologies ( nanorods and fractals ) and structural phases ( zinc blende or wurtzite structures ) of cdse nanocrystals can be easily controlled. a precipitate slow - release controlled method was designed in the synthesis of manganese selenides

    在化學調控合成思想的指導下，運用已取得的調控合成的成功經驗，利用mnseo3沉澱緩釋放出mn2 +源和硒源，在調節反應溫度的基礎上，于同一反應體系成功地合成了mnse2和mnse的立方體和球形微米晶，實現了產物組成和維度的調控，並對它們的磁行為進行了研究。
  2. Through the study of the example of shaxi porphyry body in anhui province, the authors first figured out the storage time of plagioclase phenocrysts, then calculated the nucleation rate and growth rate of the crystals and, on such a basis, established the thermal model for cooling of the hypabyssal magmatic system

    本文試圖通過對安徽沙溪斑巖體進行實例研究，先求出斜長石斑晶的存儲時間，再算得晶體成核速率和生長速率，進而建立起淺成巖漿體系冷卻的熱模型。
  3. On the basis of optoelectronic dynamics and nucleation and growth model, we simulated photosensitive process by the following steps : the creation of optoelectrons, carriers " transmission and decay, until the formation of latent image. in our simulation code, monte carlo method was adopted in order to simplify the algorithm

    本工作以光電子動力學理論為依據，利用成核生長（ nucleation & growth ）理論模型，並在此基礎上採用montecarlo方法，模擬了光電子的產生、遷移、衰減、直到形成潛影中心為止的感光過程。
  4. Presently, the nucleation and growth mechanism of diamond has n ' t been known completely. thermodynamically, the nucleation and growth of diamond at low temperature and low pressure is still considered as a paralogism

    目前金剛石的熱力學成核及生長機理尚不完全清楚，金剛石在低溫低壓下的成核和生長，仍被認為是一種熱力學的「悖論」 。
  5. Driving force of acicular ferrite nucleation and growth in weld metal of microalloyed steel

    微合金鋼焊縫組織中針狀鐵素體形核與長大驅動力
  6. The results show that the deposition of nickel on the substrate do not undergo upd process, but undergoes nucleation process. in the experimental conditions, the electrocrystallization of nickel follows the mechanism of three dimensional progressive nucleation and growth

    結果表明，鎳在該基體上的沉積沒有經歷upd過程，鎳的電沉積經歷了晶核形成過程，在所研究的外加電位范圍內，其電結晶按連續成核和三維生長方式進行，外加電位對晶體生長具有顯著的影響。
  7. According to the i - t curves of potential step, it was revealed that electrocrystallization of ni - w - b alloy on glassy carbon followed the mechanism of instantaneous nucleation and three dimensional growth with diffusion controlled. the crystal nucleus number on the surface of electrode raised by the increase of over potential

    根據電位階躍的i t曲線分析得知，在玻摘要碳電極上ni wb合金電結晶過程遵從擴散控制瞬時成核三維成長模式進行，且隨著過電位的增加，電極表面上晶核數增多。
  8. The nucleation and growth of calcium oxalate ( caoxa ) crystals in liposome solutions was investigated using laser light scattering spectroscopy and transmission electron microscopy ( tem )

    採用激光散射儀和透射掃描電子顯微鏡分別研究了卵黃卵磷脂（ pc ）囊泡的粒徑和囊泡中生長的草酸鈣晶體的粒徑大小。
  9. The investigation results show that fly ash particles serve as nucleation sites for the growth of the hydration products and the quality of fly ash does not affects the microstructure of concrete much

    研究結果表明：粉煤灰顆粒充當水化物的中心質，摻加粉煤灰使混凝土層狀形貌得以改善，孔隙下降，不同品質粉煤灰對早期水化物的生成有明顯的影響。
  10. The mechanisms of diamond nucleation and growth are discussed, and it is believed that the continued ion bombardment during the deposition process is a key factor for the growth of nanocrystalline diamond film using ch4 and h2

    探討了金剛石的核化機制和納米金剛石的形成機制，認為沉積過程中的持續的離子轟擊是ch _ 4和h _ 2體系制備納米金剛石薄膜的關鍵。
  11. With the thermodynamic theories and techniques, it is relatively easy to determine the phase equilibrium data with enough accuracy, however there still exist much more difficulties in crystallization kinetics study even for a simple binary system. that is the reason that nucleation and crystal growth rate are generally represented in form of the empirical expressions. the crystallization kinetic is important for crystallizer design, process control and optimization, and it is strongly depended upon the accurate characterization of process information concerning with multiphase flows and the further disclose of its mechanisms with suitable mathematical models

    熱力學理論和方法已足以獲得準確的相平衡關系；然而即使對于簡單的二元物系的結晶過程，晶核形成和晶體生長動力學的研究仍面臨許多困難，通常採用經驗模型表述，而動力學參數的準確性和可靠性是結晶器放大設計、過程式控制制與優化的關鍵，因此多相流信息的準確表徵、結晶機理的進一步揭示及建立起與之相適應的數學模型有著十分重要的學術研究和實際應用價值。
  12. The study showed that the effect of surface tension induced by the nanosize curvature of critical nuclei could drive metastable phase region of diamond nucleation in carbon diagram into stable phase region, consequently, for both of homogenous and heterogeneous nucleation processes, diamond nucleation would be prior to graphite nucleation in competing growth of diamond and graphite upon chemical vapor deposition ( cvd )

    研究表明，建立在碳的平衡相圖基礎上，在納米尺寸的金剛石臨界核的曲率誘導下的表面張力效應將金剛石成核的亞穩相區推進到穩定相區，因此無論對于金剛石的均勻氣相成核還是異質成核，在金剛石和石墨的競爭生長中，金剛石成核均優先於石墨成核。
  13. Substrate negative bias voltage deeply impacts the nucleation and growth of cbn. there is a threshold value of bias voltage for depositing cbn

    襯底負偏壓對立方氮化硼的成核和生長有十分重要的影響，存在偏壓閾值，低於該值不能產生立方氮化硼。
  14. Polycrystalline diamond films with preferred orientation by adopting assisted - bias hfcvd technique are prepared, and the mechanisms of the nucleation and growth of the films are studied. in addition, application of the film to the heat sink of power electron device is discussed

    採用輔助偏壓熱絲cvd技術，制備擇優生長的多晶金剛石薄膜，研究了金剛石薄膜的成核及生長機理，並將其應用於功率電子器件的熱沉。
  15. It ' s well - known that nucleation consisted of homogeneous nucleation and heterogeneous nucleation. the organic matrix used as the template to induce inorganic crystal growth and simulate the biomineralization is actually to promote heterogeneous nucleation and inhabit homogeneous nucleation. urinary stone is a kind of product of unusual biomineralization

    眾所周知，結晶過程中的成核有均相成核和非均相成核兩種可能，利用有機基質做模板，誘導無機晶體生長，模擬生物體內的礦化過程實際是促進非均相成核而抑制均相成核。
  16. By increasing the h2 dilution ratio, it is found that atomic hydrogen can selectively etch amorphous phase and stabilize crystalline phase. from the study on the distance from substrate to catalyzer, choosing a proper distance can ensure the gas fully decomposed, while a relatively low substrate temperature can cause the nanocrystalline particles to lose mobility and keep their sizes. the pre - carbonization process can enhance the nucleation density and make the growth of high quality nanocrystalline p - sic films much easier

    實驗結果表明：隨著工作氣壓的減小，薄膜的晶粒尺寸有所減小；通過提高氫氣稀釋度，利用原子氫在成膜過程中起的刻蝕作用，可以穩定結晶相併去除雜相；選擇適當的熱絲距離能保證反應氣體充分分解，又使襯底具有較高的過冷度，是形成納米薄膜的重要條件；採用分步碳化法可以提高形核密度，有利於獲得高質量的納米- sic薄膜；襯底施加負偏壓可以明顯提高襯底表面的基團的活性，因負偏壓產生的離子轟擊還能造成高的表面缺陷密度，形成更多的形核位置。
  17. The effect of lattice mismatch on the nucleation process of heteroepitaxial growth of ultrathin film

    晶格失配對異質外延超薄膜生長中成核特性的影響
  18. In this paper, concentrated sulfuric acid and titanium dioxide are used to prepare the tios04 solution that test later required under long time heat. the influences of reaction time and reaction temperature to yield of tioso4 are discussed. in the experiment of preparing tio2 powder, reaction temperature, ph values, material ratio, operation way, velocity of feed, calcining heat and time are researched by the principle of nucleation and growth in thermodynamics and kinetics

    在制備tio _ 2粉體實驗中，根據成核生長的熱力學和動力學原理，深入分析了沉澱反應時環境的溫度、 ph值、反應物配比、操作方式、加料速度等因素對ti （ oh ） _ 4粒度的影響，以及焙燒溫度和保溫時間等因素對制得的納米tio _ 2粉體性能的影響，得出了制備銳鈦型納米tio _ 2粉體的優化工藝條件。
  19. The precipitation sequence is. - supersaturated solid solution - stoicheometric " phase - growth. with the increase of the composition there is more characteristic of non - classical nucleation and growth, and the order parameter values of critical ordered nucleus decrease. the precipitation sequence is : supersaturated solid solution - nonstoicheometric ordered phase - stoicheometric " phase - growth

    隨濃度增加，大部分亞穩區合金沉澱非經典形核長大的特徵增強，有序相臨界晶核序參數分佈曲線降低，且分佈更加平緩，沉澱序列為：過飽和固溶體非化學計量比有序相化學計量比相長大，非化學計量比有序相併非熱力學意義上的亞穩相，研究工作明確了這一點。
  20. Abstract : based on the ahievement of epitaxial growth in several perovskite oxide films, we discuss the importance of substrate temperature ( ts ) and substrate material in the epitaxial growth of perovskite oxide thin films. influences of ts on growth orientation and epitaxial threshold temperature were observed. the results indicate that during the growth of the oxide films the phase formation and growth dynamics should be taken into consideration. the threshold temperature for epitaxial growth depends on the substrate materials. this demonstrates the influence of substrate material on the initial nucleation and epitaxial growth

    文摘:在成功地外延生長超導、鐵電、鐵磁等多種性質的鈣鈦礦結構氧化物薄膜的基礎上，討論影響氧化物薄膜外延生長的一些因素.考慮到相形成和薄膜生長動力學，在利用脈沖激光淀積法外延生長氧化物薄膜中襯底溫度是十分重要的工藝參數.襯底溫度對成相和生長薄膜的取向都有影響.考慮到薄膜是首先在襯底表面成核、成相併生長.因此襯底材料晶格的影響是不容忽視的.觀察到襯底材料對薄膜外延生長溫度的影響.在適當的工藝條件下，利用低溫三步法工藝制備得到有很強織構的外延薄膜.這突出表明界面層的相互作用對鈣鈦礦結構薄膜的取向有著相當大的影響
分享友人
分享到 Line

分享到臉書