hall coefficient 中文意思是什麼

hall coefficient 解釋
哈耳系數
  • hall : n 1 〈常作 H 〉（政治團體、工會等的）本部，總部，辦公大樓。2 會館，會場，會堂；展覽廳；娛樂場。3 ...
  • coefficient : adj. 共同作用的。n. 1. 共同作用；協同因素。2. 【數，物】系數，率；程度。
  1. Brings forward the basic network cell model of symmetrical blast vault and asymmetric blast vault. then studies and analyses airflow in vault of main voltage switchyard hall of xiluodu hydropower station which is far cry and large numbers of airflow conflux, brings forward concept of “ virtual embranchment ” and corresponding basic network cell model, regresses calculate expressions of flux uniformity coefficient and impedance of “ virtual embranchment ” of vault of main voltage switchyard hall of xiluodu hydropower station

    而後又採用cfd數值模擬的方法對溪洛渡水電站主變洞排風拱頂這種多股氣流匯流的長距離通道內的氣流流動進行了分析，提出了「虛擬分支」的概念和相應的網路基元模型，並回歸得到了溪洛渡水電站主變洞排風拱頂各個排風「虛擬分支」風量均勻系數以及阻抗的計算公式。
  2. A theoretical research of hall coefficient in the normal state of bi

    正常態霍爾系數的理論分析
  3. Extrinsic semiconductor single crystals - measurement of hall mobility and hall coefficient

    非本徵半導體單晶霍爾遷移率和霍爾系數測量方法
  4. A theoretical research of hall coefficient in the normal state of bi2sr2cacu2o8

    Bi2sr2cacu2o8正常態霍爾系數的理論分析
  5. And got the results consistent with the experiments. it is argued that the successive deepening of pseudogap with decreasing temperature leads to that hall coefficient attains to a positive maximum at the temperature a little higher than

    正常態霍爾系數的溫度行為，得到與實驗相符的結果。指出贗隙隨溫度降低的不斷加深導致了霍爾系數在比
  6. We measured the samples " electrical properties ( square resistance, square carrier concentration, carrier mobility and hall coefficient ) at room temperature by hall measurement. the experimental results revealed that all the samples are p - type, with increasing the annealing temperature, the carrier mobility increased and the square carrier concentration decreased. these changes in electrical properties are explained by a decrease in the number of mn acceptors because of the forming of mnas phase and the resuming of lattice defects during annealing

    所有樣品均為p型導電類型；發現在650到850溫度范圍內，隨著退火溫度的升高，樣品的方塊載流子濃度呈下降趨勢，而載流子遷移率呈上升趨勢；這是由於在退火過程中，隨著退火溫度的升高，有更多的mn參與mnas相的形成，使得以替位受主形式存在的mn減少，並且晶格缺陷得到恢復所致。
  7. Test method for resistivity and hall coefficient in insb single crystals

    銻化銦單晶電阻率及霍耳系數的測試方法
  8. Hall coefficient depends on electronic concentration and the relative values of empty hole concentrations and their migration rate in the semiconductor

    而霍耳系數取決於半導體材料中電子濃度和空穴濃度的相對大小及其遷移率之比。
  9. Semiconductor materials was laid on the base, and the corresponding electrode was lead to. the semiconductor material has selective adsorption to the gas that changes the electronic concentration which also raises hall coefficient, corresponding changes the export of hall electromotive force, so the gas sensors which is based on hall effect was made

    當我們把半導體材料塗敷到基片上，並引出相應的電極，由於氣敏材料對個別氣體有選擇的吸附特性從而改變了材料中的電子濃度，也就引起了霍耳系數的相應變化，輸出的霍耳電動勢也跟著變化，就製成了基於霍耳效應的氣敏傳感器。
  10. In the hall effect, hall electromotive force is not only related to the current density, magnetic field and the distance of the poles, but also to hall coefficient directly

    據知，霍耳效應中輸出的霍耳電動勢除了跟輸入的電流強度、磁場強度及輸出電極的間距有關外，還與霍耳系數成正比。
  11. The semiconductor material has selective adsorption to the gas that changes the electronic concentration which also raises hail coefficient corresponding changes in the export of hall electromotive force

    這種新型傳感器不僅可以根據需要輸出幾毫伏至幾十毫伏甚至幾百毫伏的直流電壓，而且具有其它半導體傳感器所沒有的優點無需另外加熱。
  12. Test methods for measuring resistivity and hall coefficient and determining hall mobility in single - crystal semiconductors

    測量單晶半導體的電阻率霍爾系數及霍爾遷移率的試驗方法
  13. The work theory, structure, work state and control of linear motor is analyzed. the use and rebuilding of servo controller and variable frequency adjustable speed of permanent magnet synchronous motor ( pmsm ) is presented. the theory and use of hall sensor is introduced. the obtainment approach of transform matrix coefficient is given

    分析了作為驅動裝置的直線電機的工作原理、結構、工作狀態以及對它的控制。對控制器的使用和改造以及同步電機的變頻調速作了闡述。對位置傳感器（霍爾傳感器）的原理和使用做了說明。
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