hbn 中文意思是什麼
hbn
解釋
罕步-
3 we for the first time prepared hbn - cbn mixed films with the hot filament assisted ecr cvd system
3首次利用熱絲輔助ecrcvd系統制備了hbn七bn混合薄膜。 -
Target material was hexagonal boron nitride ( hbn ) and working gas was pure argon
用射頻濺射法在si襯底上制備立方氮化硼，靶材為hbn ， 。工作氣體為氬氣。 -
Here, we ' d like to re - emphasize the importance of participating ge health by numbers ( hbn ) program, which will bring you a healthy lifestyle
在此，我們將再次強調ge健康數字項目的重要性，倡導健康的生活方式。 -
Boron nitride ( bn ) thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system, with hexagonal boron nitride ( hbn ) target and working gas of argon ( or mixture of nitrogen and argon )
使用射頻濺射（ rf ）系統，靶材為燒結的六角氮化硼（ hbn ） ，工作氣體為氬氣（或氬氣和氮氣的混合氣） ，在硅襯底上沉積氮化硼薄膜。 -
The results show that at a given substrate temperature, there is a compressive stress threshold, below which cbn phase is thermodynamically stable and p above which hexagonal bn ( hbn ) phase is thermodynamically stable
結果表明，在給定的襯底溫度下，存在一個壓應力閾值，壓應力低於此值時立方相是熱力學穩定相，壓應力高於此值時，六角相是熱力學穩定相。 -
As hbn program has promoted, there are several factors contributing to healthy lifestyle : like exercise regularly, healthy eating, weight control, reducing cholesterol level, handling stress, quit smoking, and watch the alcohol, etc
正如健康數字項目所倡導的，健康的生活方式包括：適當的運動，良好的飲食習慣，控制體重，降低膽固醇水平，能應對各方面壓力的良好的心理調節能力，戒煙，飲酒適度等等。 -
2 studying of the properties of cbn thin films afm showed that cbn thin film delaminated from substrate obviously. basing xps, we calculate the nib ratio to be 0. 90 that is closing to unity, and the thickness of hbn layer on cbn layer that is about 0. 80 nm
根據x射線光電子能譜，計算得到立方氮化硼薄膜中的n和b的原子數比為0 . 90 ，接近理想化學配比1 ；立方氮化硼薄膜頂層的六角氮化硼的厚度約為0 . 80nm 。 -
A ) the orientation of hbn on si ( 100 ) was dominated intrinsically by the crystalline habit and the lattice mismatch between the substrate and films. the former was dominated by the periodical bond chain ( pbc ) theory, while the latter was in relation with the stress and strain
A ） hbn在si （ 100 ）表面的取向受hbn自身結晶習性和它與襯底間的晶格匹配關系的控制，前者是受周期性鍵鏈（ pbc ）理論控制，後者與應力和應變有一定關系。 -
1 successively depositing cbn thin films on si substrates which reaches international advanced level, the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied. boron nitride ( bn ) films were deposited on ( 100 ) - oriented p - type silicon substrate ( 8i sqcm ) with rf sputtering system. the target was hexagonal boron nitride ( hbn ) of 4n purity, and the working gas was the mixture of nitrogen and argon
研究了襯底負偏壓和射頻功率對制備立方氮化硼薄膜的影響立方氮化硼薄膜沉積在p型si （ 100 ） （ 8 15 cm ）襯底上，靶材為h - bn靶（純度達99 . 99 ） ，濺射氣體為氬氣和氮氣混合而成，制樣過程中，襯底加直流負偏壓。
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