hbt 中文意思是什麼

hbt 解釋
人乳腺腫瘤
  1. Hetero - junction bipolar transistor hbt

    異質接面雙載子晶體管
  2. Our hbt series concrete pump is a high - tech product incorporated with international advanced technology and our experience in design, production and maintenance service

    濟南恆升工程機械有限公司生產的hbt系列混凝土輸送泵是我公司根據市場需求，採用國際先進技術，集多年設計、生產，維修服務的豐富經驗而製造的新型高科技產品。
  3. For designing the microwave power amplifier formed by the chip of sige hbt more accurately, an novel method to extract chip s - parameter from s - parameter of packaged device with package is proposed

    為了更精確設計由sige異質結晶體管（ hbt ）管芯構成的微波功率放大器，本論文提出了一種新穎的從管殼封裝器件的s參數中提取出管芯s參數方法。
  4. Heterojunction bipolar transistor, hbt

    異質接面雙載子晶體管
  5. In this dissertation, sige hbt device and sige bicmos high speed operational amplifier ( op ) are designed successfully by studying sige hbt theory and sige bicmos circuit characteristics

    論文通過對sigehbt原理和sigebicmos電路特點的研究，設計出sigehbt器件和sigebicmos高速運算放大器。
  6. The technology used in the hbt production process is extremely complex ; advanced wireless semiconductor is one of only three companies in the world that possess this technology the other two are both located in the us. unlike the situation with other silicon chip products, japanese and korean manufacturers have yet to master hbt technology

    德信科技成立於2001年，主要從事ic設計，並導入生產，生產過程中除晶圓代工和封裝測試是委外處理外，其餘皆由德信科技掌握，包括行銷。
  7. A planar sige heterojunction bipolar transistor was fabricated using polysilicon emitter technology and sige base grown by molecular beam epitaxy. the sige hbt

    室溫下該晶體管的直流電流增益為30到50 ，基極開路下，收集極-發射極反向擊穿電壓
  8. Hbt lock on a heap or b - tree index

    Hbt =堆或b樹索引的鎖。
  9. 5 、 through the structural parameters of the sige hbt, associating the passive devices, the layout of the monolithic integrated circuit lna is obtained, and the technology of the circuit and the vital process process are introduced. through the analysis and the design of sige hbt, two solutions of the base

    重點是通過對sigehbt分析和研究，提出了解決基區外擴現象的兩種方案，同時在工藝上應用sigehit - kit0 . 35 mbicmos新工藝來製作平面電感、電容、電阻和有源器件。
  10. In the design of the transistor structure, the structure and performance of sige hbt are first simulated with ise tcad. then, taking into consideration the actual process [ 3 ], the optimization of the design is performed

    首先，我們利用isetcad軟體對sigehbt的結構和性能進行了模擬，並結合實際的工藝條件對器件結構進行設計[ 3 ] 。
  11. As is known to all, one of the most important characteristics of sige hbt is the strained sige base growing on the si substrate. generally, the base is required to be very thin so as not to cause the base sige crystal lattice mismatching in subsequent annealing process. also, in order not to increase the thermal noise of device, the base is always heavily doped

    眾所周知， sigehbt的主要特點之一就是在si材料襯底上生長的sige材料是應變的，為了在後續的高溫退火工藝中不發生晶格馳豫現象，通常要求器件的基區要做的很薄，同時為了不增加器件的熱噪音，通常sigehbt基區都是高摻雜的。
  12. According to the characteristics of sige hbt, such as holding high performance as gaas which can meet the demand with rf ics and having low cost because of the compatibility with si technology, sige hbt has become one of the hot fields in the world

    由於sige異質結雙極器件（ hbt ）既能像gaas器件一樣滿足rfics對高性能要求，又可以與si工藝兼容而具有低成本的優點，所以成為國內外研究的熱點課題之一。
  13. The hbt radius parameters and the hbt - parameters of single gaussian source and double gaussian source are investigated by using two - pion correlation function in hbt intensity interferometry

    摘要利用理想高斯源的兩粒子關聯函數，對單高斯源和雙高斯源的兩介子hbt關聯效應進行了研究，得出了相應的半徑參數和參數。
  14. In this thesis, the gesi hbt ' s reliability is investigated

    本文對gesihbt的可靠性問題進行研究。
  15. First of all, a new gesi hbt process flow was designed. with this technology flow, the stability, reliability and the performance of gesi hbts were improved significantly

    首先本論文提出了一種新型的gesihbt工藝流程，採用這種流程極大地改善了器件穩定性、可靠性及其性能。
  16. It has been shown that the performance of sige heterojunction bipolar transistor ( sige hbt ) in high frequency is much better than that of si bipolar junction transistor ( si bjt ), and is better than that of algaas / gaas metal semiconductor field effect transistor ( algaas / gaas mesfet ) in some aspects

    Sige異質結雙極晶體管（ sigehbt ）的高頻性能大大優于si雙極晶體管（ sibjt ） ，並在某些方面優于algaas / gaasmesfet ，所以sigehbt具有廣闊的應用前景。
  17. In the process of the circuit design, sige hbt and mos devices must be arranged properly in order to realize advantage complementarity

    在具體電路設計過程中，根據sigehbt和mos器件的特點，合理使用兩種器件以實現優勢互補。
  18. Orientation effects on ingap gaas hbt

    性能的影響
  19. Hydraulic system of concrete pump hbt

    40混凝土泵液壓系統
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