heavily-doped 中文意思是什麼

heavily-doped 解釋
重摻雜的
  • heavily : adv. 1. 重重地，沉重地。2. 緩慢地；遲鈍地。3. 猛烈地，厲害地。4. 沮喪地，灰溜溜地。5. 沉悶地；〈古語〉悲傷地。6. 暴虐地。
  • doped : 摻雜的摻了添加劑的
  1. Exciton - phonon coupling of nn3 center in heavily nitrogen doped gap

    3束縛激子與聲子的耦合
  2. The dependence of oxygen precipitation and induced - defects in heavily as - doped silicon on heat treatment process was studied by annealing and ig process, chemical etching, scanning electron micrograph ( sem ) and transmission electron microscopy ( tem ). a developed ig technique was suggested and the mechanism of the influence of as on oxygen precipitation formation in heavily as - doped silicon was discussed

    本文通過化學腐蝕、光學顯微鏡、掃描電鏡（ sem ） 、透射電境（ tem ）等分析技術，對重摻砷硅單晶在單步退火工藝和內吸雜退火工藝中氧沉澱及誘生缺陷的形態，形核與熱處理溫度、時間的關系等進行了研究。
  3. Then, the effect of heavily doped boron on ig of czochralski silicon was also investigated. it is found that no dz ( denuded zones ) were observed in the hb samples subjected to high one - step temperature, ramping annealing respectively. for conventional high - low - high three - step ig annealing, the dz becomes narrower and bmd density is higher in hb samples than that in lb samples, as a result of hb enhancing oxygen precipitation

    結果顯示，單步高溫熱處理時重摻硼樣品不能形成潔凈區；降溫退火中，降溫速度較為緩慢（ 3 / min ）時能生成一定量的氧沉澱，但沒有潔凈區形成；普通高?低?高三步熱處理過程中，形成明顯的潔凈區，但相對輕摻樣品而言，潔凈區較窄，氧沉澱密度明顯偏高，說明重摻硼樣品吸雜能力強。
  4. The nucleation temperature of oxygen precipitation is about 750 c in lightly doped czsi, while the nucleation in heavily as - doped si occurred at a higher temperature ( 750 - 900 c )

    普通直拉硅氧沉澱在低溫750形核，重摻as硅單晶形核溫度較高，在750 - 900之間。
  5. It is assumed that as enhances the out - diffusion of oxygen atoms near the surface of si wafers. ig effect is also gained in heavily b -, p - and sb - doped si wafers respectively

    在該吸除工藝下，重摻b 、 p 、 sb矽片表面也形成了不同寬度的清潔區，體內出現了較高密度的氧沉澱。
  6. The abrupt heterojunction diode is composed of a 1 m thick heavily doped n - type sic layer and a 0. 4 m thick lightly doped p - type sic1 - xgex layer with varied composition ratios

    在這個異質結中， n型重摻雜3c - sic層的厚度為1 m ， p型輕摻雜sicge層厚度為0 . 4 m ，二者之間形成突變異質結。
  7. In the experiment we also observed negative differential resistance characteristics of gesi hbts with heavily doped base at high collector - emitter voltage and high current. a new interpretation to this phenomenon was given. this

    在實驗中我們還觀察到，在高vce和大電流下，重摻雜基區gesihbt出現負阻現象，我們對這一現象進行了新的解釋，認為這是由熱電負反饋導致的。
  8. But there are still several problems concerning the stability and reproducibility of device fabrication. the heavily born doped p - type diamond films synthesized by hot filament chemical vapor deposition with b ( ch3 ) 3 as boron source substituted the metal electrode aluminum

    本文還利用熱燈絲化學汽相沉積（ hfcvd ）法，採用硼酸三甲酯b （ ch3 ） 3為硼源制備了重摻雜p型金剛石膜，作為lppp / alq異質結增強型發光器的電極。
  9. The crystal phase of as - deposited znte ( znte : cu ) films depends on the cu concentration in znte. znte films with un - doped cu and low cu doped ( 2. 98 % ) show cubic phases with preferred orientation of ( 111 ). heavily cu - doped films exhibit a mixture of cubic and hexagonal phases

    剛沉積的znte （ znte ： cu ）薄膜的晶相結構取決于薄膜中的摻銅濃度，未摻銅和低摻銅（ 2 . 98 ）的薄膜為立方相，重摻銅（ 9 . 9 ）出現六方相和立方相的混合相。
  10. Effects of germanium on oxygen precipitation in heavily boron - doped czochralski silicon

    鍺對重摻硼直拉硅中氧沉澱的影響
  11. Heavily as - doped silicon substrates are adopted by many device manufactories because of higher as - doping density. therefore, quantitative determination of oxygen precipitation and induced - defects in heavily as - doped silicon is important to the realization of ig

    重摻砷硅襯底片正日益受到器件廠家的青睞，所以研究重摻砷硅單晶中的氧沉澱及誘生缺陷對實現重摻襯底的內吸除有重大意義。
  12. For the substrate of heavily boron doped wafer, it has been proved that oxygen concentration is increased and oxygen precipitation is enhanced by hb ( heavily boron - doping ) during crystal growth, which is beneficial for ig and therefore improve the yield of ulsi

    另一方面，在相同的晶體生長條件下，重摻硼硅單晶氧含量升高，氧沉澱被增強，能形成有效吸雜點，提高矽片機械強度，抑制void缺陷，有利於提高ulsi的成品率。
  13. As is known to all, one of the most important characteristics of sige hbt is the strained sige base growing on the si substrate. generally, the base is required to be very thin so as not to cause the base sige crystal lattice mismatching in subsequent annealing process. also, in order not to increase the thermal noise of device, the base is always heavily doped

    眾所周知， sigehbt的主要特點之一就是在si材料襯底上生長的sige材料是應變的，為了在後續的高溫退火工藝中不發生晶格馳豫現象，通常要求器件的基區要做的很薄，同時為了不增加器件的熱噪音，通常sigehbt基區都是高摻雜的。
分享友人
分享到 Line

分享到臉書