heterojunction 中文意思是什麼

heterojunction 解釋
半導體異質結構
  1. In this book we also discuss nonlasing heterojunction diodes.

    本書也討論了非激光型的異質結發光二極體。
  2. However, in our nation, the research on gan - based microelectronic devices is in the early stage, and a great deal of vestigation is still needed to perform on separative processes of gan devices. due to the lack of algan / gan heterojunction materials in the country, a few researches on algan / gan were made, and the investigation on schottky rectifiers is much less

    在國內， gan基微電子器件的研究剛開始起步，制備gan分立器件的工藝尚處于探索研究階段，特別是受algan gan二維電子氣材料來源的限制，國內algan gan基的場效應晶體管的研究開展得較少，關于肖特基整流二極體的研究更少。
  3. Effect of spin - orbit coupling on the transport properties in ferromagnet semiconductor insulator heterojunction

    絕緣體多層膜結構中隧穿性質的影響
  4. At this time, the field of semiconductor lasers is dominated by heterojunction devices.

    目前，在半導體激光器領域中，異質結激光器已佔居支配地位。
  5. The abrupt heterojunction diode is composed of a 1 m thick heavily doped n - type sic layer and a 0. 4 m thick lightly doped p - type sic1 - xgex layer with varied composition ratios

    在這個異質結中， n型重摻雜3c - sic層的厚度為1 m ， p型輕摻雜sicge層厚度為0 . 4 m ，二者之間形成突變異質結。
  6. Heterojunction bipolar transistor, hbt

    異質接面雙載子晶體管
  7. Optimized layers design for algan gan ingan symmetrical separate confinement heterojunction multi - quantum well laser diode

    對稱分別限制多量子阱激光器的優化設計
  8. Finally, the photovoltaic characteristics of polyaniline are also investigated. the voltage - current curve, the relationship of light intensity and open voltage and short current and stability of polyaniline heterojunction solar cells are tested, the various effect factors on polyaniline heterojunction are discussed as well, and some result that are never reported in published paper have been acquired

    利用聚苯胺和復合材料與n型硅制備出了有機p - n異質結太陽電池，對電池的伏安特性、開路電壓、短路電流和穩定性進行了測試，對電池的機理進行了初步探討，分析了影響聚苯胺p - n異質結電池特性的各種因素。
  9. Lppp thin films were prepared by spin coating from a solution of lppp in toluene and alq was formed by vapor deposition. different configuration devices with lppp single - layer, lppp micocavity and lppp / alq heterojunction were fabricated

    利用lppp甲苯溶液旋塗制備lppp薄膜，真空蒸鍍法制備alq膜和電極，分別製作了lppp單層無腔、 lppp單層微腔、增強型lppp / alq異質結結構的有機電致發光器。
  10. Photocatalytic activity and mechanism of heterojunction thin films

    異質結型光催化膜的活性及其機理研究
  11. Photoelectric characteristics of sicge / sic heterojunction diode were simulated using medici tools, and the simulation results are presented and discussed in this paper

    在本文中，通過使用二維器件模擬軟體medici ，對sicge sic異質結的光電特性進行了模擬。
  12. Studies of photovoltage property about heterojunction composite film with 1, 4 - bis ( ferrocene ) thiophene and sno2 nanoparticles in this paper, we successfully fabricated a novel heterojunction composite film composed of 1, 4 - bis ( ferrocene ) thiophene and sno2 nanoparticles. the morphology andmicrostructure have been investigated by afm and xrd. their optical and photovoltage properties were also studied using uv spectra and surface photovoltage spectra ( sps )

    用afm和xrd分別表徵了納米二氧化錫和異質結的成膜特性以及二氧化錫的物相結構；用紫外可見吸收光譜和表面光電壓譜（ surfacephotovoltagespectra ， sps ）對其光吸收和光伏性質進行了研究，發現復合膜異質結在紫外可見光區（ 300 550nm ）有很好的光伏性能，相對于單一薄膜材料的光伏響應范圍有一定程度的拓展，而且響應強度也有較大提高。
  13. A planar sige heterojunction bipolar transistor was fabricated using polysilicon emitter technology and sige base grown by molecular beam epitaxy. the sige hbt

    室溫下該晶體管的直流電流增益為30到50 ，基極開路下，收集極-發射極反向擊穿電壓
  14. 13. 5 ghz ft sige heterojunction bipolar transistor fabricated by planar technology

    Ft為13 . 5ghz的平面結構sige異質結雙極晶體管的研製
  15. Direct gap - indirect gap transformation of znse and znse gaas heterojunction structures under hydrostatic pressure

    異質結構中壓力導致的直接禁帶向間接禁帶的轉變
  16. Recently, the interaction between saw and the 2deg in the gaas / alxga1 - xas heterojunction has attracted more and more scientists " attentions

    近年來，表面聲波（ saw ）通過壓電效應與gaas / alxga1 - xas異質結中二維電子氣（ 2deg ）的相互作用受到越來越多的關注。
  17. It has been shown that the performance of sige heterojunction bipolar transistor ( sige hbt ) in high frequency is much better than that of si bipolar junction transistor ( si bjt ), and is better than that of algaas / gaas metal semiconductor field effect transistor ( algaas / gaas mesfet ) in some aspects

    Sige異質結雙極晶體管（ sigehbt ）的高頻性能大大優于si雙極晶體管（ sibjt ） ，並在某些方面優于algaas / gaasmesfet ，所以sigehbt具有廣闊的應用前景。
  18. As there is some difficulty to manufacture the graded heterojunction, we put forward that it can use double layer abrupt heteojunction to take the place of the graded heterojunction

    由於漸變異質結在實現上存在一定的困難，因此我們提出了用雙層突變異質結擬合漸變異質結。
  19. Appling p - n graded heterojunction instead of abrupt one is studied deeply in theory, and the conclusion is that it will enhance the current injection ratio, decrease the built - in voltage, improve the quality of the crystal and it will not affect the confinement to the hole

    在理論上提出在hb - led器件的dh結構中使用p - n結的漸變異質結替代現行的p - n突變異質結。分析採用異質結漸變方式將增加hb - led的電流注入比，減小內建電勢，改善晶體質量，並且不影響p - n結對空穴的限制。
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