high frequency amplification 中文意思是什麼

high frequency amplification 解釋
高頻放大
  • high : adj 1 高的〈指物，形容人的身高用 tall〉；高處的；高地的。2 高級的，高等的，高位的，重要的。3 高尚...
  • frequency : n. 1. 屢次，頻仍，頻繁。2. （脈搏等的）次數，出現率；頻度；【物理學】頻率，周率。
  • amplification : n. 1. 擴大；擴充。2. 【電學】增幅，放大（率）。3. （聲明等的）補充材料。
  1. ( 2 ) the lateral deformation is effectively limited by reinforced earth layers and the settlement becomes small. @ the lateral deformation is enlarged on soft foundations, and the settlement becomes large. @ the reinforced earth layers on soft foundations behaves extension. the response behaviors of high sand - gravel embankment are indicated as the following : ? he amplification factor of earthquake acceleration varies with reinforced earth structure. ( 2 ) the basic frequency of the original embankments in different reinforcement conditions is about 0. 76hz. ? the amplitude of dynamic deformation appears small and the dynamic stability is safe

    研究表明：加筋土體能有效地限制路堤的側向位移發展，減小沉降變形量；軟基路堤的側向位移較大，將顯著地增大路堤的沉降變形；軟基上加筋土墊層中產生的拉應力最大；加筋砂礫土路堤在振動荷載作用下動變形反應較小，具有良好地動力穩定性。
  2. After analyzing the noise in the high frequency carrier channel and computing the parameter of channel, we solved the kernel problems of coupling and matched impedance. separate designing the power, power amplification, port, transceiver and other circuits, we fitted together all circuits become the whole lonworks node circuit, and then triumphantly debugged it

    經過對高頻載波通道的干擾特性分析和線路參數的計算，解決了耦合和阻抗匹配等核心問題，並對電源、功放、介面、收發器等部分電路分別設計，最後形成了完整的lonworks節點硬體電路，並調試成功。
  3. Blank detail specification - case - rated bipolar transistors for high frequency amplification ; german version en 150007 : 1991

    空白詳細規范.高頻放大額定功率雙極晶體管
  4. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1162

    電子元器件詳細規范. 3da1162型硅npn高頻放大管殼額定的雙極型晶體管
  5. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1722

    電子元器件詳細規范. 3da1722型硅npn高頻放大管殼額定的雙極型晶體管
  6. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da 2688

    電子元器件詳細規范. 3da2688型硅npn高頻放大管殼額定的雙極型晶體管
  7. Specification for harmonized system of quality assessment for electronic components - blank detail specification : case - rated bipolar transistors for high frequency amplification

    電子元器件質量評定協調體系規范.空白詳細規范.高頻放大用管殼額定雙極晶體管
  8. Semiconductor devices ; discrete devices ; part 7 : bipolar transistors ; section 4 : blank detail specification for case - rated bipolar transistors for high - frequency amplification

    半導體器件.分立器件.第7部分:雙極晶體管.第4節:高頻放大雙極晶體管的空白詳細規范
  9. Semiconductor devices - discrete devices. part 7 : bipolar transistors. section four - blank detail specification for case - rated bipolar transistors for high - frequency amplification

    半導體器件分立器件第7部分:雙極型晶體管第四篇高頻放大管殼額定雙極型晶體管空白詳細規范
  10. Specification for harmonized system of quality assessment for electronic components - blank detail specification : ambient - rated bipolar transistors for low and high frequency amplification

    電子元器件用質量評估協調體系規范.空白詳細規范.低頻與高頻放大用額定周圍環境的雙極晶體管
  11. Semiconductor devices ; discrete devices ; part 7 : bipolar transistors ; section one : blank detail specification for ambient - rated bipolar transistors for low and high - frequency amplification

    半導體器件.分立器件.第7部分:雙極性晶體管.第1節:低頻和高頻放大用的額定環境晶體管的空白詳細規范
  12. The shearing layer is carried by the jet and the eddy is formed because of the instability and selective amplification of shearing layer which will propagate to the downstream. as the eddy impacts the impinging wall, a wave of pressure disturbance with certain frequency is induced. this wave then propagates to the upstream with high speed, and results in the overlap and amplification of the waves when the frequencies of them are close with each other

    當前噴嘴流束中的不穩定擾動波在穿過腔內的剪切層時，剪切層對其有選擇放大作用，形成渦環結構，剪切流動中渦環與碰撞壁撞擊，在碰撞區域產生壓力擾動波並向上游反射，在上游剪切層分離處誘發新的擾動的產生，當新擾動與原擾動匹配時，射流上游就被不斷地受到周期性激勵，腔內就產生流體自激振蕩並在後噴嘴出口形成脈沖射流。
  13. Impact will allow you to hear the high frequency speech cues that traditional amplification does not

    「移頻」可以使您聽到並辨別傳統助聽器無法使您聽到的高頻語言聲。
  14. This thesis mainly describes a tesing and consoling kit based on ni " s special virtual instrument software development kit - labwindows / cvi, aming at traditional testing device " s limitation such as high cost of hardware, complexity of construct, singleness of function etc. the tesing and consoling kit can condition the signal intermixed with interfere noise and deal with the collected datum through common signal conditioning ( amplification, isolation multiplex filtering ) -, software calibration digital filtering etc to analyse signal in time and frequency domain

    本文針對傳統測量設備硬體成本高、構造復雜、重用性差、功能單一等方面的問題，著重探討了利用ni的labwindows cvi這一虛擬儀器開發軟體構建的測控平臺，通過通用信號調理（如放大、隔離、多路轉換、模擬濾波等） 、軟體校正、數字濾波等方法對混雜有干擾的信號進行調理及採集后的數據進行處理，然後進行時域或頻域的分析。
  15. Semiconductor devices - discrete devices. part 7 : bipolar transistors. section one - blank detail specification for ambient - rated bipolar transistors for low and high frequency amplification

    半導體器件分立器件第7部分:雙極型晶體管第一篇高低頻放大環境額定的雙極型晶體管空白詳細規范
  16. Specification for harmonized system of quality assessment for electronic components - semiconductor discrete devices - blank detail specification - ambient - rated bipolar transistors for low and high - frequency amplification

    電子元器件質量評估的協調體系.半導體分立器件.空白詳細規范.低頻和高頻放大用環境溫度額定雙極晶體管
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