high random access 中文意思是什麼
high random access
解釋
高速隨機存取-
High speed dynamic random access memory, hsdram
高速動態隨機存取記 -
Barium strontium titanate ( bst ) shows high dielectric constant and low dissipation factor and holds great promise for wide applications in dynamic random access memory ( dram ), transducer and infrared detector
鈦酸鍶鋇( bst )薄膜具有較高的介電常數和較低的介質損耗,在動態隨機存儲器( dram ) 、傳感器、探測器等方面應用前景廣闊。 -
In the large family of semiconductor technology, static random access memory ( sram ) attracts much attention because of its broad applications. sram has become an indispensable member of semiconductor memory family due to its low power consumption and high - speed performance
在隨機存取存儲器中,除了動態存儲器( dram )外,靜態存儲器( sram )由於其自身的低功耗和高速的優勢而成為半導體存儲器中不可或缺的一類重要產品。 -
Optical code division multiple access ( ocdma ) technology possess the characteristics of combating interference, high frequency efficiency, security, and simply network protocol, random access, so it is competitive to apply ocdma to wireless optical access network
光碼分多址( ocdma )技術具有的抗干擾能力強、頻率利用率高、保密性好、網路協議簡單、支持隨機接入等優點,將其應用到無線光接入網中,不僅具有cdma技術的優點又保持了無線光通信的優點,實現二者優勢互補。 -
Cache memory is constructed with high - speed static random access memory ( sram ), managed in a unit called cache line
當cache中保存著cpu要讀寫的數據時, cpu直接訪問cache 。 -
Barium strontium titanate ( bst ) film has been investigated extensively for the application in the high density dynamic random access memories ( drams ). one of the most crucial electrical parameters of these films has been the leakage current level of dram cells
鈦酸鍶鋇( ba _ ( 1 - x ) sr _ xtio _ 3或bst )以其高介電常數、低損耗,介電響應快、疲勞強度大等優點,在下一代動態隨機存儲器( dram )上的應用前景非常廣闊,是近年來人們研究的熱點。
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