high rate deposition 中文意思是什麼

high rate deposition 解釋
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  • high : adj 1 高的〈指物，形容人的身高用 tall〉；高處的；高地的。2 高級的，高等的，高位的，重要的。3 高尚...
  • rate : n 1 比率，率；速度，進度；程度；（鐘的快慢）差率。2 價格；行市，行情；估價，評價；費，費用，運費...
  • deposition : n. 1. 免職，罷免；廢位。2. 淤積[沉積]（物，作用）。3. 耶穌從十字架上放下（的畫、雕刻）。4. 寄存，委託；委託物。5. 【法律】口供，證言；口供書。
  1. The spray pyrolysis technique has a great application potential to be a method to prepare the economical tin dioxide film for its unsophisticated equipment, low - cost and high deposition rate. in this paper, antimony - doped snoa ( ato ) thin films were deposited onto soda - lime glass by the spray pyrolysis method, using metal salts snch ? 2h2o and sbcls as precursors

    噴霧熱分解法以其設備簡單、成本低、制備樣品快等優點成為一種很有應用潛力的制備sno _ 2薄膜的方法，另外噴霧熱分解法在鍍膜玻璃的工業化生產中有著廣闊的應用領域。
  2. The spray pyrolysis method has large application potency to be a method to prepare the economical thin films for its unsophisticated equipment, low - cost and high deposition rate which are great advantages if the technique is to be scaled up for industrial applications

    噴霧熱解法具有沉積溫度、速率容易控制，對基板選擇性低，所得薄膜形貌均勻緻密等特點。而且設備簡單，成本低廉，在大規模工業生產方面有很大潛力。
  3. Uniform and compact plzt and sno _ 2 ceramic targets, which diameter were 212mm and 221mm, respectively, had been successfully fabricated. ( 2 ) a rotating magnetic field rf magnetron sputtering system had been designed and set up, which showed high utilization efficiency of target, high films uniformity, and high deposition rate, etc. ( 3 ) the plzt and sno _ 2 thin films were investigated by afm, xrd, sem, and spectral photometer. the optimized processing parameters of preparing these films had been found

    並以此為基礎分別制備了緻密、均勻、平整、直徑為212mm的plzt和221mm的sno _ 2陶瓷濺射靶材; （ 2 ）為克服現有磁控濺射設備的不足，提出了一種新的磁控濺射方案，採用該方案的設備具有:靶材利用率高、鍍膜均勻、成膜速度快等特點; （ 3 ）運用afm 、 xrd 、 sem以及雙光路分光光度計等分析手段對plzt和sno _ 2薄膜的微結構和性能進行研究，找到了制備plzt電光薄膜和sno2透明電極材料的最佳工藝條件。
  4. By means of pld, it is easy to achieve ingredient homology between film and target. moreover, the deposition experiment condition is easy to control with a high deposition rate, a short deposition cycle and a wide application

    Pld是制備薄膜的最好方法之一， pld制備薄膜具有膜成分容易做到與靶成分一致，沉積條件容易控制、沉積速率高、實驗周期短、應用范圍大的特點。
  5. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  6. In the work, mid - frequency pulse magnetron sputtering is used to prepare znoral thin films used as the back reflector of the thin silicon films solar cells. the best techological condition was obtained by optimizing the preparing conditions, ( var is decided by the deposition rate, target voltage : 265v, gas pressure : 0. 6pa, the high base vacuum is expected

    本文採用中頻脈沖磁控濺射法，通過優化zno ： al薄膜的制備工藝，如靶電壓、本底真空度、工作氣壓、襯底溫度、 o _ 2 ar ，得到可用於硅薄膜太陽能電池背電極的zno ： al薄膜。
  7. Among these methods, magnetron sputtering is the most widely used technique for preparing thin films owing to its high deposition rate and good uniformity etc. in my experiment, zao films were prepared by dc magnetron sputtering in pure argon gas atmosphere using zno target mixed with al2o3 ( lwt %, 2wt %, 3wt %, 4wt % respectively ) and the films were figured by xrd, sem, xps, afm and ftir, uv photometer

    本研究課題以氧化鋅鋁靶為靶材，採用直流磁控濺射工藝在純氬氣氣氛中沉積zao薄膜。靶材中al _ 2o _ 3的摻雜比例分別為1 、 2 、 3 、 4 。用xrd 、 sem 、 xps 、 afm和紅外、紫外分光光度計等測試手段對沉積的薄膜進行了表徵。
  8. In view of its virtue of high degree of electron and ion generations, the microwave electron cyclotron resonance ( mwecr ) cvd method is expected to deposit device quality a - si : h at high deposition rate

    鑒于微波電子迴旋共振化學氣相沉積（ mwecrcvd ）系統具有電子和離子產生率高等優點，人們期望它能在較高的沉積速率下獲得器件級質量的a - si ： h薄膜。
  9. With the development of thin film science and technology, various thin film preparation techniques developed rapidly, as a result, conventional so - called filming has developed from single vacuum evaporation to many new film preparation techniques, such as ion plating, sputtering, laser deposition, cvd, pecvd, mocvd, mbe, liquid growth, microwave and mtwecr, etc., of which vacuum evaporation is the common technology for thin film preparation, because it has the distinct advantage of high quality of film deposition, good control - ability of deposition rate and high versatility

    隨著薄膜科學與技術的發展，各種薄膜制備方法得到了迅速發展，傳統的所謂鍍膜，已從單一的真空蒸發發展到包括蒸鍍、離子鍍、濺射鍍膜、化學氣相沉積（ cvd ） 、 pecvd 、 mocvd 、分子束外延（ mbe ） 、液相生長、微波法及微波電子共旋（ mwecr ）等在內的成膜技術。其中電子束蒸發技術是一種常用的薄膜制備技術，它具有成膜質量高，速率可控性好，通用性強等優點。
  10. This paper has discussed preparing diamond - like carbon films by means of micro - wave ecr plasma source ion implantation and plasma enhanced chemical vapour deposition. we use the raman spectrum, ft - ir, afm and so on to study the dlc film. the result indicates : different bias voltage, frequency and gas flow rate of psii will have impact on sp3 proportion of dlc films, we find high bias voltage, low frequency and moderate gas flow rate can prepare high sp3 proportion dlc films ; we simply illustrate the influence of bias voltage on sp3 proportion of dlc films in pecvd

    研究結果表明：在全方位離子注入技術中，不同的偏壓、頻率、氣體流量都對薄膜中sp ~ 3鍵比例有所影響，文中對具體的影響進行了分析，發現偏壓的增加、頻率的降低和適中的氣體流量可以制備出sp ~ 3鍵比例高的類金剛石膜；在等離子增強化學氣相沉積技術中，對偏壓對sp ~ 3鍵比例的影響也進行了簡單分析。
  11. Compared with different inducing methods by lots of experiments, a simple and effective inducing method is confirmed, the opimal technological conditions and formula about the soluton of electroless deposition ni - p alloy are also obtaned. the influence of different technological parameters on the deposition rate is studied. analyzed the pefformance of ni - p alloy on the differen substfates and its corresponding tricture, the result is shown tha the electroless plating nickel process can obtained the ni - p alloy film having brightuess - integrity sdse, strong binding energy and high rigidity at the temperatur about 350wt00oc, the electroless plating nickel film would trallsform from amorphous to crystal state

    本文通過大量實驗，對幾種誘發材料與過程進行分析，研究確定了簡便有效的誘發方法，以及與之相匹配的化學鍍ni - p合金溶液優化配方和工藝條件，討論了各工藝參數對鍍速的影響，並對銅及黃銅基體上得到的ni - p沉積層進行了性能和結構分析，得到外觀光亮完整、結合力強、硬度高的鍍層。
  12. On the same time, in order to gain high deposition rate and fine uniformity a - si : h films, we transformed the magnetic configuration to mirror magnetic field by

    同時為了獲得高沉積速率、大面積均勻的a - si : h薄膜，我們改變等離子體的磁場位形為磁鏡磁場。
  13. The experimental results show that dlc film could be deposited on silicon substrate rapidly and uniformly in a large area by means of ablated plasma jet generating on the target surface during hipib irradiation, the instantaneous deposition rate is as high as imm / s and the uniform deposition area covered 40 - 50 cm2

    實驗結果表明，利用hipib燒蝕等離子體在si基體上可以實現快速、大面積、均勻地沉積類金剛石薄膜，薄膜的瞬時沉積速率達到1mm s ，均勻薄膜的面積達到40 ? 50cm ~ 2 。
  14. High quality znsxse1 - x thin film grown at the optimized temperature had the smoothest surface with lowest rms value of 1. 2 nm and tem cross - sectional micrograph showing a well defined columnar structure. the dependence of substrate temperature, deposition rate and alloy composition to the structure of the film was discussed in the thesis. the developed theory named " quasi - structure area mode " can successfully explain the film growth mechanism of polycrystalline znsxse1 - x thin films deposited on ito substrate by mbe

    研究了採用mbe系統沉積zns _ xse _ （ 1 - x ）多晶薄膜的生長機理，分析了襯底溫度、沉積速率及薄膜組分對薄膜微結構的影響，提出的「類結構區域模型」可以較完整地解釋ito襯底上zns _ xse _ （ 1 - x ）多晶薄膜生長的機理。
  15. Among these methods, magnetron sputtering is the most widely used technique for preparing thin films, owing to its high deposition rate and good uniformity etc. ito films were prepared by rf and dc magnetron sputtering in pure argon gas atmosphere, using in2o3 and in target mixed with sno2 ( 10wt % ) and sn ( 7wt % ) respectively

    其中磁控濺射工藝具有沉積速率高均勻性好等優點而成為一種廣泛應用的成膜方法。本研究課題分別以氧化銦錫靶和銦錫合金靶為靶材，採用射頻磁控濺射和直流反應磁控濺射工藝在氬氣氣氛中沉積ito薄膜。靶材中sno _ 2和sn的摻雜重量比例分別為10和7 。
  16. The best process for high quality tio _ ( 2 ) thin film deposited on k9 glass by reb is studied by using orthogonal test method, the se results indicate that the best process for tio _ ( 2 ) thin film deposition is the substrate temperature of 300, the total gas press in the chamber of 2 x 10 ~ 2pa and the deposition rate of 0. 2 nm - s - 1, of which the substrate temperature has influence on the optical properties of the deposited films notably

    文中首先以tio _ 2薄膜的折射率和消光系數為研究對象，採用l9正交試驗法研究了在k9玻璃上制備高光學質量tio _ 2薄膜的最佳工藝條件。橢圓偏振儀的測試結果表明，制備tio _ 2薄膜的最佳工藝條件為：基片溫度300 ，工作真空2 10 ~ （ - 2 ） pa ，沉積速率0 . 2nm ? s ~ （ - 1 ） ，其中基片溫度對薄膜光學常數的影響最大，該結果具有較好的可重現性。
  17. We studied the effect of mirror magnetic field to deposition rate and homogeneity in large area, moreover, gained large - area homogeneous films at high deposition rate

    研究了磁鏡磁場對薄膜沉積速率及均勻性的影響，並且在實驗中得到了高沉積速率、大面積均勻的a - si : h薄膜。
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