high-density current 中文意思是什麼
high-density current
解釋
高密度流-
The method of obtaining high concentration of na2feo4 solution by quick electrolysis mainly contains four aspects : adoption of either a diaphragm or an ionic membrane electrolytic cell in which a thin anodic cell lying between the two cathodes, ( 2 ) using an iron anode that has larger specific surface area, ( 3 ) keeping suitable concentration of naoh in the anodic cell, adoption of lower current density and higher electrolyzing speed. the practical technique parameters follow a s below : the naoh solution of 14 - 16mol / l, the temperature of 303 - 308k, the surface anodic current density of 300a / m2, the unit electrolyzing speed of efficiency larger than 6. 0a / l
快速電解獲取高濃度na _ 2feo _ 4溶液的方法，主要包括四個方面：採用兩陰極室夾一厚度較小的陽極室的隔膜（或離子膜）電解槽；使用比表面積較大的鐵網陽極；保持陽極室中有適宜濃度的濃naoh溶液；採用較低的電流密度和較高的電解速度。具體工藝參數是： 14 16mol / lnaoh溶液、溫度303 308k 、表觀陽極電流密度300a m ~ 2 、有效單位電解速度6 . 0a / l 。 -
In this article, the fundamental principle and current research of optical data storage including cd and dvd, three - dimensional optical data storage and near - field high - density optical data storage are summarized. a two - dimensional finite difference time domain program for analysis of solid immersion lens system is compiled
本論文概述了已產業化的以cd和dvd為代表的光盤存儲技術和在開發中的高密度光存儲技術（主要包括三維光數據存儲技術及近場光學超高密度光存儲技術）的原理及研究現狀。 -
The high - power semiconductor quantum well ( qw ) laser is a kind of luminescence device with superior performance, it has longe - lived, low threshold current density, high efficiency, high luminosity and excellent monochromatic, coherence, directionality, etc. the high - power semiconductor laser is widely applied to the fields, such as military, industrial machining, communication, information processing, medical treatment, etc. the material ' s epitaxy is the foundation of the whole laser ' s fabricating, and it has important influence on the optics and electricity performance about the laser
大功率半導體量子阱激光器是一種性能優越的發光器件，具有壽命長、閾值電流密度低、效率高、亮度高以及良好的單色性、相干性、方向性等特點，廣泛應用於軍事、工業加工、通信及信息處理、醫療保健等領域。材料的外延生長是整個激光器器件製作的基礎，對器件的光學和電學性能有著重要的影響，生長不出優質的材料體系，獲得高性能的器件就無從談起，因此，材料的外延生長便成為了整個半導體激光器製作過程之中的重中之重。 -
Based on the two ctd data sets from the cruise of the summertime in 2000 and wintertime in 2001 in bohai sea and the collected historic observed thermohaline data, we analyse systemically the distributional characteristics of temperature, salinity and density in wintertime and summertime in the bohai sea and the results reveal that the current hydrologic characteristics of the bohai sea have some obvious variances relative to the previous research results. in summer there are three low - temperature centers in the middle - layer and underlayer of the middle parts of the bohai strait, liaodong bay - mouth and bohai bay - mouth, but there is a uniform high - temperature center in the middle part of the bohai sea. in winter the isotherms extend westward and northward to the bohai sea from the warm core of the bohai strait and a cold - water tongue off the qinhuangdao spreads southeastward out, so the saddle - like isotherm pattern is formed in the middle part of the bohai sea
利用2000年夏季和2001年冬季渤海兩次ctd資料和以前收集的渤海溫鹽調查資料，分析了渤海冬、夏季溫鹽密度的分佈特徵，結果表明，渤海現有的水文特徵與以往研究結果相比發生了明顯的變異：夏季在渤海海峽、遼東灣口和渤海灣口中部中、下層存在三個低溫中心，在渤海中部則出現一個上下均勻一致的高溫中心；冬季等溫線以渤海海峽暖中心向西和向北兩個方向伸入渤海，而從秦皇島外海有一冷水舌向東南方向伸展，在渤海中部海域形成「馬鞍狀」等溫線結構。 -
The ingaas / gaas strained quantum well lasers are able to work with extremely low threshold current density, high characteristic temperature and high cod limit, which make ld lasers achieve higher output power and longer ufe. therefore, ingaas / gaas strained quartum wellstructures can be used for the fabrication of high power semiconductor lasers
Ingaas / gaas應變量子阱激光器具有級低的閾值電流密度、較高的特性溫度和較高的光學災變損傷閾值，這使得激光器具有更高的輸出功率和更長的壽命。因此ingaas / gaas應變量子阱結構可以用於大功率半導體激光器的制備。 -
Water dielectric pulse power modulator has been widely applied because of its merits of high energy storage density, compactness, and capability to drive low impedance high power microwave sources. research for multi - pulse operation of high power spark gap switch with high current and comprehending its physical properties are the basis to study multi - pulse operation or repetitive operation of water dielectric pulse power modulator
水介質脈沖功率調制器具有儲能密度高，結構緊湊、與低阻抗微波源較好匹配的特點，因此得到廣泛的應用，但是受到高功率、大電流氣體開關的絕緣恢復的影響，水介質等低阻抗脈沖功率調制器的重復頻率運行或多脈沖運行受到較大的限制。 -
The model allows for a reduction in density on the tamar site, showing that the main 20 story high - rise can be removed and replaced with open space. this answers the call by many to preserve government hill by accommodating the various departments and bureaus of government at the current central government office site and murray building
這模型可減低添馬艦地區密度，移走二十層高的建築物，讓該地方有更廣闊的空間，這亦回應了一些倡議保留政府總部人士的訴求，讓各政府部門繼續沿用美利大廈的辦公室及政府總部。 -
We can obtain the trap density by measuring the change of gate voltage of mos capacitance under constant current stress and the change of high frequency c - v curve before and after the stress
該方法根據電荷陷落的動態平衡方程，測量恆流應力下mos電容的柵電壓變化曲線和應力前後的高頻cn曲線變化求解陷階密度。 -
The salinity distribution characteristics are the high - salinity in the bohai bay and the low - salinity in the boahi strait. the density distribution shows that there is a large cyclonic density circulation in bohai sea and it is likely to exist some density current gyre in the middle part of the bohai sea. in winter the saddle - like pattern of the bohai sea temperature and salinity shows that the circulation structure is much complexer than the previous research results
密度分佈表明：夏季渤海灣口已經由以前的低密度中心變為現在的高密度中心，相應的環流結構也必會發生大的變化；夏季渤海中部會存在一個反氣旋式的密度環流，並在局部可能存在多個密度流渦環；冬季渤海「馬鞍狀」溫鹽結構反映其密度環流結構要比以往研究結果復雜得多。 -
Pic simulations are performed to determine gap scaling in a high density pegs. comparisons of simulation results with simply theory results and experiment results, indicate that the pegs gap is always equal to the critical gap for magnetic insulted electron flow. it is important to note that, the vacuum electron flow to the anode causes current loss and the
另外，根據模擬結果還得到了兩個重要結論：電流損失是由真空漂移電子的出現所造成的，電流損失的大小與負載阻抗成近似正比關系；負載阻抗等於peos的流阻抗時，負載獲得功率最大。 -
In order to make investigators know about the current research state of preparation of the carbon / graphite materials with high density and strength from mesocarbon microbeads, and direct the research, development and production, in this review, the influence of preparaed mesocarbon microbeads from various raw materials and methods of preparation, ball diameter of carbosphere, preoxidation temperature and time, moulding pressure and time, heat treatment temperature and heating rate, holding time on the mechanical properties and microscopic structure of carbon / graphite product were discussed by us
摘要為了對中間相炭微球制備高密高強炭石墨材料的研究現狀有所了解，並且對實驗和實際生產起到指導作用，本文通過參閱大量中外文獻，討論了不同原料及制備方法制得的中間相炭微球、炭微球的球徑、預氧化溫度及時間、成型壓力及時間、熱處理溫度及升溫速率、保溫時間對炭石墨製品的力學性能及微觀結構的影響。 -
Due to their high aspect ratios and small tip radii of curvature, carbon nanotubes possess marvelous electron field emission properties, viz. low turn - on voltage ( e0 ) and large emission current density ( je ), and have good potential for using as materials in electron emitters of flat panel display
由於奈米碳管具有極高的縱橫比與極小的尖端曲率半徑，因此奈米碳管有著超乎常態的電子場發射特性，低的場發射起始電壓與大的場發射電流密度，使其為電子場發射平面顯示器的良好材料。 -
The gap formation process, in the last stages of conduction phase of high density ( 1015 / cm3 ) pegs, is examined by pic simulation. in simulations, evolution plots of plasma and current streamline are used to analyze the mechanism of gap formation
利用粒子模擬程序，對高密度（ 10 ~ （ 15 ） cm ~ 3 ） peos導通電流最後階段真空鞘層的形成過程進行了模擬研究。 -
Films of the cnx nanotube were produced by thermal decomposition on fe - coated si substrates, and their low field emission properties have been investigated. a high - emission current density of 1. 28ma / cm2 for an applied field of 2. 54v / u m was achieved, implying cnx nanotubes have better electron field emitter properties than the films of carbon tubes and bcn tubes do under same experiment conditions
860熱解乙二胺，在沉積有鐵催化劑的矽片上生長出cn _ x納米管薄膜，並進行了低場致電子發射特性測試，外加電場2 . 54v / m時，發射電流達到1 . 28ma / cm ~ 2 ，比相同實驗條件下制備出的碳管、硼碳氮管薄膜的場致電子發射性能優越。 -
Fault current limiters would be installed in transmission and distribution systems, especially for electric utilities and large energy users in high - growth, high density areas
故障電流限制器等將被安裝在輸電及配電系統中，尤其是要安裝在高增長性，高密度區的電力單位和能源大戶。 -
Magneto - electronics lies in the area of current scientific interest in condensed matter physics and material sciences, due to abundant physical conceptions and applied potentials. it is a base of magnetic devices with high density and sensitivity. recently, non - volatile magnetic computer memory ( mram ) is expected to have a large economic impact, and has been significantly focused on its experimenatal research
目前，非揮發性磁存儲記憶器件?磁存儲器magneticrandomaccessmemory （ mram ）的研究和開發已成為自旋電子學研究的主要應用目標；而在室溫和低磁場下，具有足夠大的磁電阻（ mr ）效應成為實現mram器件應用的前提。 -
The high density resisitivity method through electrode power supply, surveys electric current and voltage, gathers apparent resistivity data
摘要高密度電法通過電極供電、測量電流和電壓，採集視電阻率數據。 -
Holographic data storage is a subject of considerable current and commercial interest. volume holographic storage ( vhs ) has attracted interest because of its potential in high - density and fast parallel readout. photorefractive crystals ( e. g.,
體全息存儲是一種高速并行讀取的信息存儲技術，在海量信息存儲、光學相關圖像庫的建立、光學濾波器等方面取得了較大的進展。 -
According to basic theories for distributing regular of electric field about surface single spot current source and high density resistivity prospecting method in this paper. put forward an installation which use one current electrode or dipole current electrodes and the others prospecting at the same time to realize high density resistivity method by office date processing, such as wenner pole - dipole a, wenner pole - dipole b, wenner alpha, wenner beta, wenner gamma and pole - pole array
摘要運用地面點電流源電場的分佈規律和高密度電阻率法的基本思想，提出了分別利用單極供電、偶極子供電，其餘電極同時測量，通過室內數據整理實現高密度電阻率法的溫納對稱四機、溫納偶極、溫納微分、溫納三極a 、溫極三極b和二極等裝置。 -
Barium strontium titanate ( bst ) film has been investigated extensively for the application in the high density dynamic random access memories ( drams ). one of the most crucial electrical parameters of these films has been the leakage current level of dram cells
鈦酸鍶鋇（ ba _ （ 1 - x ） sr _ xtio _ 3或bst ）以其高介電常數、低損耗，介電響應快、疲勞強度大等優點，在下一代動態隨機存儲器（ dram ）上的應用前景非常廣闊，是近年來人們研究的熱點。
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