high-k 中文意思是什麼

high-k 解釋
高誘電率
  • high : adj 1 高的〈指物，形容人的身高用 tall〉；高處的；高地的。2 高級的，高等的，高位的，重要的。3 高尚...
  • k : （pl Ks K s; ks k s ）1 英語字母表第十一字母。2 K字形物體[記號]。3 一個序列中的第十一〈若 J 略去...
  1. Foodstuffs - determination of acesulfame - k, aspartame and saccharin - high performance liquid chromatographic method

    食品.醋氨基磺酸鹽k糖精和鄰磺酰苯甲酰亞胺的測定.高效液相色譜分析法
  2. An interaction between atp and high k

    博士，特聘教授，博士生導師
  3. The progress and preparation of binary compound high - k dielectric

    材料研究進展及制備
  4. Product fields : high - intensity sweetener acesulfame k, sorbates, dietary fibers carob fiber, oat fibers

    -主要生產蜂王漿茶葉等系列天然保健品，品牌「寶生園」 「生茂泰」 。
  5. K - ar age dating method is facing a serious challenge to its application due to that both ar loss and ar excess are widespread found even though it has been undergoing 50 years. in the latest few years of the 20th century, studies on k - ar geochronology have been pushing on a new step as a sign of method perfected and precision enhanced. high precision and high resolution

    Ar定年方法的完善和精度的提高為標志，把k - ar年代學研究推向了一個新高度。微區微量高精度高分辨定年，把定年時限擴展到人類歷史范疇，精細的分析技術拓寬了年代學的應用范圍，使之解決的地質問題更廣泛。
  6. The stem of helianthus tuberosus ( l. ) had the ability of containing high contents of na + and cl -, and selectively absorbed k + in high proportions seawater irrigation ; the above and tubers yields of helianthus tuberosus ( l. ) had n ' t decreased until at the 50 % proportions seawater irrigation where the yields decreased by 37 % and 32 % in contrast to freshwater - irrigated. it meant that through natural weather, reduction of yields was occurred by salinity of irrigation water but the reduction was not significant until the proportions of seawater in irrigation water were the same as 50 % or above it

    海水灌溉下，菊芋的莖部具有明顯的貯cl ~ - 、 na ~ +能力，在高濃度海水灌溉下菊芋整個植株對k ~ +具有較高的選擇吸收性；菊芋地上部和塊莖產量在30海水處理范圍內，沒有減產趨勢，在50海水灌溉下減產幅度分別為37和32 ；可見，正常自然條件下的海水灌溉，對產量的影響主要和灌溉水的濃度有關，但只有在50處理下才顯著減產，低於50產量並無差異。
  7. Group division : experiments were performed in 3 different conditions, i. e., normal 4 medium, high k * stimulated medium, and ca2 + - free medium. hippocampal slices from a same rat were then divided into 3 treatment groups : control group ? lices were oxygenated with 95 % o2 / 5 % cc > 2 and incubated at 35 ~ 36 ? for 30min ; hypoxia group ? lices were oxygenated and incubated on the same conditions as the control group, then the mixture gases change into 95 % o2 / 5 % co2 - hypoxic condition were remained for lomin ; ginkgolide b preincubation group ? lices will be preincubated at the normal oxygenated medium containing loomm ginkgolide b, 10 min later, repeated hypoxic treatment

    3實驗採用隨機區組設計，動物隨機分為三組，各組動物制備的海馬腦片分別進行三種不同介質的灌流實驗，即正常介質組、高k ~ +去極化組和無ca ~ （ 2 + ）組；各組中由同一隻動物製成的海馬腦片再隨機分到三個不同的處理組，即：正常對照組、低氧組和ginkgolideb預孵育組。
  8. Research progress in electrical properties of high - k hfo2 gate dielectric films

    2柵介質材料電學特性的研究進展
  9. Trace elements and isotopic geochemistry of the high - k calcalkaline granites in north margin of eastern part of west kunlun

    西昆侖東段北緣花崗巖微量元素及同位素地球化學
  10. The volcanic rocks evolved from low - k to high - k in composition with time and migrated spatially from north to south

    在時間上火山巖成份有從低鉀向高鉀演化的總趨勢，在空間上火山活動有由北向南遷移的趨勢。
  11. The thermal stability of high - k thin film deposited on si substrate has been studied using x - ray photoelectron spectroscopy ( xps )

    通過x射線光電子能譜對沉積在si基底上的high - k薄膜的熱穩定性進行了研究。
  12. These high - k materials degraded to silicide island at temperatures of higher than 950. these results are consistent with rta samples

    在950加熱后， high - k物質將熱降解為hfsi 。各樣品在加熱過程中的變化與其在rta處理后的結果是一致的。
  13. In order to investigate the interfacial reaction of high - k thin film on si substrate, the high - k samples were studied by xps as a function of annealing temperature

    為了考察high - k物質與si基底的界面反應，以溫度為函數，對樣品進行xps光電子譜線測定。
  14. This work is based on the preparation, characterization, and processing of high - k materials ba0. 8sro0. 2tio3 thin film capacitor was deposited using mod technique with highly controlled precursor solution

    採用封閉式迴流系統和廉價的ba和sr的醋酸鹽為前軀物成功制備了不同厚度的bst薄膜，觀察了薄膜厚度對其電學性能的影響。
  15. Compared to other commonly referenced high - k materials, hfo2 is known for its stability on silicon and process compatibility. the fabrication and electrical properties of hfo2 and hfoxny gate are carefully studied. with the study on hfo2. we can receive a few significative conclusion : 1

    結果表明，與傳統的hf清洗的si表面相比， nh _ 4f清洗的si表面與hfo _ 2具有更好的熱力學穩定性，因而可獲得更低的eot和柵泄漏電流密度； 3 ）研究了濺射氣氛和退火工藝對hfo _ 2柵介質薄膜性質的影響。
  16. These problems boost the study of high - k materials as the alternatives of sio2 gate dielectrics. among all high - k gate dielectric materials, hafnium oxide ( hfo2 ) is being extensively investigated as one of the most promising candidate materials due to its superior thermal stability with poly - si, biggish constant and reasonable band alignment. our researches focus on hfo2 dielectrics

    高k柵介質材料已經被廣泛地研究來替代sio _ 2 ，以降低柵泄漏電流和改善可靠性，其中， hfo _ 2由於其較大的介電常數、較大的禁帶寬度、與si的導帶和價帶較大的偏置、以及與si的高的熱力學穩定性等特徵，被認為是最有希望的替代sio _ 2的柵介質材料之一。
  17. Mutual impairment of atp - and high k i increase in ng 108 - 15 cells

    李勝男，女，特聘教授，博士生導師。
  18. For example, plant k content in seedling stage is usually less than 3 %, while during the period from plant transplanting to maximum tillering stage, plant k content reaches to a peak value ( more than 4 % ), high k content in this period is favorable for photosynthesis

    比如，苗期植株含鉀量通常低於3 % ，從植株移栽至最大分蘗期達到峰值（大於4 % ） ，這一階段高含鉀量有利於光合作用。
  19. In order to resolve the questions, a new high k material is developed instead of the traditional sio2 gate dielectric material to reduce the tunneling current

    目前，正在利用介電常數較大的材料來代替傳統的sio _ 2作為柵介材料，來減少隧穿電流。
  20. The computational region was composed of fluid region enclosed by stator and rotator disks, as well as inner and outer shrouds, and solid region, that is rotator disk. the main research work and results are the following : 1 ) numerical study was conducted for the flow problem inside a typical rotator - stator cavities with different turbulent models including 1 - equation model and high k - model rng k - model

    論文主要工作和結果如下： （ 1 ）針對典型的轉-靜盤腔模型進行數值研究，通過對單方程模型、高k -模型和rngk -模型獲得的計算結果進行比較以及與相關試驗數據驗證，結果表明， rngk -模型較高k -模型和單方程模型更能準確地模擬轉靜盤腔的流動。
分享友人
分享到 Line

分享到臉書