homogeneous perturbation 中文意思是什麼

homogeneous perturbation 解釋
均勻擾動
  • homogeneous : adj. 1. 同種的，同質的，同性的，相似的。2. 純一的，均質的；均勻的。3. 【數學】齊性的，齊次的。adv. -ly ,-ness n.
  • perturbation : n. 1. 慌張，動搖；混亂。2. 狼狽，不安，焦慮。3. 引起不安[混亂]的事物；引起動搖的原因。4. 【天文學】攝動；【物理學】微擾。adj. -al
  1. Thirdly, we obtain multiplicity of solutions for resonant non - homogeneous boundary perturbations from symmetric problem without parameter by a new perturbation method introduced by bolle in reference [ 4 ], applied in references [ 5 ] [ 6 ] and extend in reference [ 7 ]. references [ 5 ] [ 6 ] have considered some exceptive case while the section consider general case

    再次，利用bolle在文獻[ 4 ]中提出的、被應用於文獻[ 5 ] [ 6 ]以及在文獻[ 7 ]中被推廣的一種新的擾動方法得到問題即不帶參數的對稱共振非齊次邊值擾動問題的多重解，在文獻[ 5 ] [ 6 ]中討論了非線性項為摘要幾種特殊情形的情況，此部分討論非線性項為一般情形的情況
  2. Anechoic coatings " efficiency is getted from its front and back many layer ' s transfer loss compared. first, absorptive characteristic of homogeneous material is analyzed thoroughly. then wkb perturbation means are used to calculate absorption coefficient of the impedance transition structure in this paper

    本論文首先對均勻材料的吸聲特性做了深入的分析，並詳細討論了wkb微擾攝動法，利用wkb方法計算阻抗過渡結構的吸聲系數。
  3. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  4. In order to simplify the perturbation equation, we assume that the system is homogeneous in equilibrium state and poisson ' s equation describes only the relation between the perturbed density and potential function

    為了簡化方程，假定平衡時的系統是均勻的， poisson方程只建立擾動后的密度和勢函數之間的聯系。
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