hot electron injection 中文意思是什麼

hot electron injection 解釋
熱電子注入
  • hot : adj 1 熱的 （opp cold）。2 （味道）刺激性的，辣的，辛辣的；【打獵】野獸的氣味強烈的；（色彩）強烈...
  • electron : n. 【物理學】電子。 the electron beam 電子束。 the electron theory 電子（學）說。
  • injection : n. 1. 注射。2. 注射劑，注射液，針藥，灌腸（藥）。3. 充滿，注滿。4. 【醫學】充血。5. 【機械工程】噴射。6. 【宇宙空間技術】（衛星等的）入軌，射入軌道，射入軌道的時間[地點]。
  1. The positive charge assisted tunneling current can be greatly reduced by using appropriate substrate hot electron injection technique

    利用襯底熱電子注入技術，正電荷輔助隧穿電流可被大大的減弱。
  2. The first step is the creation of trap centers in ultra - thin gate oxides by hot electron injection, and the second step is oxides breakdown induced by hole trapping

    首先注入的熱電子在超薄柵氧化層中產生陷阱中心，然後空穴陷入陷阱導致超薄柵氧擊穿。
  3. The correlation between the calculated electron energy in the oxide and the electric field in the silicon substrate indicates that the difference between hot electron injection and the fn tunneling can be explained in terms of the average electron energy in the oxide

    通過計算注入到氧化層中的電子能量和硅襯底的電場的關系表明，熱電子注入和fn隧穿的不同可以用氧化層中電子的平均能量來解釋。
  4. A novel flash memory, which uses the source induced band - to - band tunneling hot electron ( sibe ) injection to perform programming, and a pmos selected divided bit - line nor ( pnor ) array architecture are originally introduced in this dissertation

    本論文首次提出了一種採用源極誘導帶帶隧穿熱電子注入（ sourceinducedband - to - bandtunnelinghotelectroninjection ）進行編程操作的新型快閃存儲器技術和一種pmos選擇分裂位線nor （ pmosselecteddividedbit - linenor ）快閃存貯陣列結構。
  5. The author ' s main contributions are outlined as following : first, the roles of hot electron and hole in dielectric breakdown of ultra - thin gate oxides have been quantitatively investigated by separately controlling the amounts of hot electron and hot hole injection using substrate hot hole ( shh ) injection method. the changes of threshold voltage have been discussed under different stress conditions

    主要研究結果如下：首先，利用襯底熱空穴（ shh ）注入技術分別控制注入到超薄柵氧化層中的熱電子和空穴的數量，定量研究了熱電子和空穴注入對超薄柵氧化層擊穿的影響，討論了不同應力條件下的閾值電壓變化。
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