hydrogen film 中文意思是什麼
hydrogen film
解釋
氫膜-
The zircondri filin wtut rirconia wa prepared and the removing technology of the zirconia on the zirconium sdrices was obtalned. the methods of chemistry and magnetron sputtring plating were used in order to platc a palladium film, which is characteristic of self catalysis for hydrogen and the sole h - permselectivity on the clean rirconium sdrices prepared by the methods of electrochemitw and ( or ) high temperatur vacuum hydrgenization, which was firstly studied. the plating tedrilogy was obained and the surface modified zirconium membran was prepared
在利用電化學法和真空高溫除氧加氫法去除了鋯表面氧化膜的基礎上，分別採用化學法、磁控濺射法兩種鍍膜技術在其表面上鍍上了一層對氫具有自催化分解、唯一選擇滲透性的金屬鈀膜，首次獲得了鋯基材膜表面上鍍鈀的制備工藝，成功制備了鋯表面改性選擇滲氫膜。 -
The design and implementation of hydrogen sensors using evanescent field fiber is introduced in this thesis. the research work mainly includes the hydrogen sensing principle of pd film, the principle of surface plasmon resonance, study of highly steady laser light, fabrication of the tapered fiber and etched fiber, the deposition of pd film, the encapsulation of sensor and the experimental results ( including the design of the set - up ) and the discussions
本論文主要圍繞實現漸逝場型光纖氫氣傳感器，開展了以下一些相關的技術性研究:鈀的氫敏感原理、表面等離子共振原理、穩定化光源的研究、拉錐型光纖和腐蝕型光纖的製作、薄膜的生長、傳感頭的封裝和傳感系統的實驗及結果分析。 -
It comprises the study of the thin film for the hydrogen sensing and the deposition technique, a surface plasmon resonance, the field distribution around the optical fiber, analysis of the power of evanescent field, the measurement approach and the data processing etc. the hydrogen sensors using evanescent field fiber is of complex technics and high sensitive
其中涉及了氫敏感膜的研究及其生長工藝、光在光波導的傳輸模式分析、光纖中漸逝場的能量分析、光學表面等離子共振技術、氫氣傳感器的檢測技術等。漸逝場型光纖氫氣傳感器是一款工藝要求非常高，靈敏度高，穩定性強，可以進行復用的新穎的光學氫氣傳感器。 -
A hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. after annealing, vo2 film with tcr ( temperature coefficient of resistance ) as high as 4 % was obtained. the bombardment of ar + could break v - o bond of v2o5 molecule in deposited film and implanted h + resulting in the deoxidization of v2o5, so the vo2 thin film could be prepared by proper control of the dose of ar + / h + implantation
利用離子束增強沉積設備，在ar ~ +離子束對v _ 2o _ 5靶濺射沉積的同時，用氬、氫混合束對沉積膜作高劑量的離子束轟擊，使得被氬離子轟擊后斷鍵的氧化釩分子，再被注入氫降價，然後經適當的退火，成功地制備了熱電阻溫度系數高達4的vo _ 2薄膜（國外報道值為2 - 3 ） ，並研製了單元懸空結構探測器和8 1 ， 16 1線性陣列。 -
Furthermore, they offer a number of advantages compared to the predominant ito films nowadays : ( i ) cheap and abundant raw materials ; ( ii ) nontoxicity ; ( iii ) good stability in hydrogen plasma, which is of significance for applications related to amorphous silicon solar cell. so the study on zao film is becoming fashionable
而zno ： al （ zao ）薄膜由於具有優良的光電特性而成為ito薄膜的潛在替代材料，且它還具有原材料來源豐富、成本低廉、無毒以及在氫等離子體中具有較好的穩定性等優點，是目前研究的熱點薄膜材料之一。 -
However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down
通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0 -
The oxide film of zirconium on the sdses conceals its high hydrogen permeability because of its self passive effect with oxygcn, which limits its application as high h - permse1ective membran
1幾個納米厚的氧化鋯膜掩蓋了其本體的滲氫性能，使其在作為高選擇滲氫膜的應用上受到限制。 -
So we applied low temperature techniques to manufacture the sense film of qcm sensors. at low temperature and low pressure, with n - butylamine as the carbon source material, and with dry hydrogen as the carrying gas, we applied r. f. glow discharge plasma to preparation the working film for the qcm sensors
在「實驗與分析」一章中較為詳細地闡述了採用等離子體化學氣相淀積的方法，以正丁胺作為碳源物質，通過射頻輝光放電在低溫低壓條件下制得了正丁胺等離子體淀積膜。 -
To hydrogenated amorphous silicon ( a - si : h ), however, it has much less defects than non - hydrogenated a - si, for the sake of much hydrogen which eliminate the defects by making a bond with non - connected si bond. with these virtue, a - si : h accord with device quality. the films of a - si : h have widely used in solar cell, film transistor and flat display
對于氫化非晶硅（ a - si : h ） ，由於氫通過無連接端的硅原子鍵合來消除缺陷，使得氫化非晶硅的缺陷密度比未氫化的非晶硅大大降低了，從而使氫化非晶硅符合器件級質量材料的要求。 -
Appointing to the characteristic and operating condition of hydrogen compressor, the carrying capacity, the leakage and the film thickness of the dry gas seal are calculated by the theory of narrow groove
針對氫氣壓縮機的特點和具體的操作條件，利用窄槽理論對所設計的干氣密封進行了承載力、泄漏量及膜厚的計算。 -
Both hydrogen plasma and sinx thin film can effectively enhance the short circuit current density of mono and poly silicon solar cells, which cause the improvement of the absolute transfer efficiency about 0. 5 % ~ 2. 9 %. depositing sinx thin film followed by hydrogen plasma treatment will result in better passivation effect. the thickness of sinx thin film will decrease and the refractive index will increase after annealing
經過薄膜後退火處理發現，氮化硅薄膜經熱處理后厚度降低，折射率升高，但溫度達到1000oc時折射率急劇降低；沉積氨化硅薄膜后400oc退火可以促進氫擴散，提高鈍化效果；超過400oc后氫開始逸失，晶體硅材料中的少子壽命急劇下降； rtp （快速熱處理）處理所導致氫的逸失比常規退火處理顯著。 -
The ci ~ - c : h film was prepared by the means of plasma assistance chemical vapor deposition with hydrocarbon n - butylamine ( ch3ch2ch2ch2nh2 ) as carbon source. the material of carbon source was carried into chemical vapor deposition chamber under pure hydrogen
採用等離子體輔助化學氣相沉積方法，以碳氫化合物正丁胺（ ch _ 3ch _ 2ch _ 2ch _ 2nh _ 2 ）作為碳源物質，用高純氫氣作為載氣，將碳源物質攜帶進入反應室。 -
A special clamp for etching optical fiber and depositing pd film on the fiber is designed. designed a encapsulation set of the characteristics that is dampproof, shake and eroding resisted. the experimental set - up for hydrogen sensing includes the light source, gas cell, mass flow controller, stainless steel helical tubing and the detector, etc. the experimental results are also discussed
本文還設計了一套光纖腐蝕用夾具、光纖封裝加熱夾具和一套光纖濺射鍍膜實驗夾具;設計並製作了一套具有防潮、抗震和抗腐蝕功效的光纖傳感頭封裝裝置;設計了一套由激光器、反應混合氣室、光功率計、質子流量計和流量控制器等組成的氫氣定標實驗裝置並對實驗數據進行了分析與處理。 -
The solution to the problem of hydrogen contained in the film was initially proposed for pecvd technique. meanwhile, the adoption of substrate bias assisted deposition further eliminated the impurity o in the film
首次解決了採用pecvd法低溫制備? sic薄膜中的含氫問題；同時，採用偏壓輔助的技術，進一步解決了薄膜中的含氧問題。 -
The response mechanism of the film to organic vapors was discussed primarily. it is thought that the film reacted with molecule of carboxyl acid vapors through both the basicity hydrogen - bond of amino - group and the acid hydrogen - bond of carboxyl acid molecule
認為摻胺碳膜通過胺基團的堿性氫鍵同梭酸類物質蒸氣分子的酸性氫鍵相互作用而使蒸氣分子在薄膜表現產生吸附引起轉換器產生相應響應。 -
Sige simox ; 3. sige smart - cut and behavior of sige / si he terostructure implanted with hydrogen. sige film preparation : sige films were grown on silicon substrate using solid source molecular beam epitaxy ( ssmbe ), gas - solid source molecular beam epitaxy ( gsmbe ) and ultra high vacuum chemical vapor deposition ( uhvcvd ) technologies
Sige薄膜生長方面：在熟悉各種薄膜外延技術的基礎上，採用了近年來發展較為成熟的固態源分子束外延（ ssmbe ） 、氣-固態源分子束外延（ gsmbe ） 、超高真空化學氣相淀積（ uhvcvd ）三種sige薄膜外延技術，在硅（ 100 ）襯底上外延生長了sige薄膜。 -
The result indicated that the deposition reaction of amino - group doping was a kind of hydrogen escaping reaction, whose film was made from carbon, hydrogen and nitrogen
結果果表明本實驗中摻胺碳膜沉積反應為脫氫反應。薄膜由碳、氫、氮三種元素所組成。 -
Furthermore, the response properties of the film to hydrogen ( hi ) ion was also studied
文章對摻胺碳膜對氫離子響應特性進行了研究。 -
If the quantity of sr is over some value ( 0. 02 % - 0. 04 % ), the melt will absorb hydrogen, and result in the formation of cavities. we think the reason is that the dissociated sr destroyed the compact oxide film of the melt
Sr的加入量過多（ 0 . 02 0 . 04 ）后，反而出現吸氣現象，導致形成孔洞缺陷，我們認為這是游離態sr破壞了al - si合金的緻密氧化膜所致。
分享友人