hydrogen plasma 中文意思是什麼
hydrogen plasma
解釋
氫等離子體-
Changes in ca2 + influx across the plasma membrane in guard cells of vicia faba by aba - induced hydrogen peroxide generation were performed by patch clamp
引起的內向cj離于通道電流的加大。我們的結果表明， aba誘導蠶豆氣孔關閉可能是通過h 。 o 。 -
During ion source operating, alternating axial magnetic field and azimuthal electric field in discharge tube ionize hydrogen gas purified by hot palladium pipe, and form plasma, hi fifties year, research reports studied on rf ion source are numerous however most of them are concerned about application, and research reports relevant to discharge theory or experiment model are unfrequent
離子源工作時，放電空間交變的軸向磁場和渦漩電場激發放電管中經鈀管純化后通入的氫氣電離，形成等離子體。 50多年來，關于高頻離子源的研究報告很多，但是，這些研究主要都集中在應用研究方面，有關高頻無極環形放電離子源的理論與實驗模型研究不是很多。 -
The performances of multicrystalline silicon solar cells were improved after porous silicon heavy phosphorous diffusion passivation and low frequency plasma hydrogen passivation
通過多孔硅重磷擴散鈍化及低頻等離子體氫鈍化等多晶硅太陽電池晶界鈍化，改善了太陽電池性能。 -
Abstract : some plasma sources in plasma microwave devices have been introduced and analyzed in this paper, the design and its driving circuit of a compact hydrogen plasma gun have been discussed in detail
文摘:介紹和分析了幾種等離子體微波器件中等離子體源，重點討論了緊湊型氫等離子體槍的設計及其驅動電路。 -
The method of preparing the uniform coating, the techniques of thermal bonding and hydrogen plasma treatment was investigated experimentally. the optimum coating method and technological parameters was summarized
重點探索了塗覆金剛石納米塗層的方法、實現金剛石與金屬鈦的熱粘接工藝以及氫等離子體處理的工藝參數，篩選出了在本實驗系統中的最佳方法和工藝條件。 -
Al - doped zno ( azo ) thin films are emerging as an alternative potential candidate for ito ( sn - doped in2o3 ) films recently not only because of their comparable optical and electrical properties ( high optical transparency in the visible range, infrared reflectance and low d. c. resistivity ) to ito films, but also because of their higher thermal and chemical stability under the exposure to hydrogen plasma than ito
Al摻雜的zno薄膜，由於具有與ito （ in _ 2o _ 3中適量摻雜sn ）薄膜相比擬的對可見光的高透過率和高電導，又因其在氫等離子體中的高穩定性等優點，已成為替代ito透明導電薄膜的研究熱點。 -
Furthermore, they offer a number of advantages compared to the predominant ito films nowadays : ( i ) cheap and abundant raw materials ; ( ii ) nontoxicity ; ( iii ) good stability in hydrogen plasma, which is of significance for applications related to amorphous silicon solar cell. so the study on zao film is becoming fashionable
而zno ： al （ zao ）薄膜由於具有優良的光電特性而成為ito薄膜的潛在替代材料，且它還具有原材料來源豐富、成本低廉、無毒以及在氫等離子體中具有較好的穩定性等優點，是目前研究的熱點薄膜材料之一。 -
However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down
通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0 -
In recent years, al - doped zno ( azo ) thin films has become a hot issue of transparent conductive thin films field and preferred materials instead of ito films not only because of their comparable optical and electrical properties ( high optical transparency in the visible range, low electrical resistivity ) to ito films, but also because of their lower price and higher thermal and chemical stability under the exposure to hydrogen plasma than ito
近年來，由於al摻雜的zno薄膜（ azo ）具有與ito薄膜相比擬的光電性能（可見光區高透射率和低電阻率） ，又因其價格較低以及在氫等離子體中的高穩定性等優點，已經成為替代昂貴的ito薄膜的首選材料和當前透明導電薄膜領域的研究熱點之一。 -
Plasma characteristics of a rf ion source are investigated by emission spectroscopy. the spatiotemporal spectral line intensities of the first three atomic lines in hydrogen bahner series ( = 656. 28, 486. 13, 434. 05nm ) of rf ion source plasma, are measured with calibrated optical multichannel analyzer ( oma ). some plasma parameters, including electron temperature, hydrogen atom density and hydrogen ion density, are calculated and analyzed using partial local thermodynamic equilibrium ( plte ) theory and abel transform
實驗採用絕對定標后的光學多道分析系統（ oma ）測定了離子源等離子體不同時間和空間位置的氫原子巴耳末譜線系中前三條譜線（ = 656 . 28 ， 486 . 13 ， 434 . 05nm ）的強度，並採用plte的理論和abel變換方法，計算出了高頻離子源等離子體的電子溫度、氫原子濃度、氫離子濃度等參數在放電的不同階段和徑向分佈情況，並進行了簡要分析。 -
By the essential control of the initial stage of - material growth, the high - quality crystal films can be obtained. by using mocvd technology, studies of some kinds of methods such as hydrogen - terminated, nitridation, plasma - assisted, growth of two stages and sputtering buffer layers have been conducted. by measuring of xrd, pl, sem and tem, and analysis of spectra of xrd, raman scatting, oa, and pl at different temperatures, we observed that the crystal quality has been improved markedly
本文利用mocvd技術，採用各種對si襯底處理的方法，如氫終止法、氮化法、等離子體轟擊方法、兩步生長法、濺射緩沖層法等進行了試驗與研究，通過x射線衍射技術（ xrd ） 、光致發光技術（ pl ） 、掃描電子顯微術（ sem ） 、透射電子顯微術（ tem ）等檢測，並對其x射線衍射光譜、拉譜光譜、吸收光譜及不同溫度下的光致發光光譜分析，發現外延晶體的生長質量得到了明顯提高。 -
So we applied low temperature techniques to manufacture the sense film of qcm sensors. at low temperature and low pressure, with n - butylamine as the carbon source material, and with dry hydrogen as the carrying gas, we applied r. f. glow discharge plasma to preparation the working film for the qcm sensors
在「實驗與分析」一章中較為詳細地闡述了採用等離子體化學氣相淀積的方法，以正丁胺作為碳源物質，通過射頻輝光放電在低溫低壓條件下制得了正丁胺等離子體淀積膜。 -
The fourier transform infrared ( ftir ) spectrum is an effective technology for studying the hydrogen content ( ch ) and the silicon - hydrogen bonding configuration ( si - hn ) of hudrogenated amorphous silicon ( a - si : h ) films. in the paper, ch and si - hn of a - si : h films, fabricated at different ratio of h2 / sih4 by microwave electron cyclotron resonance plasma chemical vapor ( wmecr cvd ) method, have been obtained by analyzing their ftir spectra that are treated by baseline fitting and gaussian function fitting. the effects of ratio of h2 / sih4 on ch and si - hn are studied
Fourier紅外透射（ ftir ）譜是研究氫化非晶硅（ a - si : h ）薄膜中氫含量（ c _ h ）及硅-氫鍵合模式（ si - h _ n ）最有效的手段，對于微波等離子體化學氣相沉積（ mwecrcvd ）方法在不同h _ 2 sih _ 4稀釋比下制備出的氫化非晶硅薄膜，我們通過紅外透射光譜的基線擬合、高斯擬合分析，得出了薄膜中的氫含量，硅氫鍵合方式及其組分，並分析了這些參數隨h _ 2 sih _ 4稀釋比變化的規律。 -
Both hydrogen plasma and sinx thin film can effectively enhance the short circuit current density of mono and poly silicon solar cells, which cause the improvement of the absolute transfer efficiency about 0. 5 % ~ 2. 9 %. depositing sinx thin film followed by hydrogen plasma treatment will result in better passivation effect. the thickness of sinx thin film will decrease and the refractive index will increase after annealing
經過薄膜後退火處理發現，氮化硅薄膜經熱處理后厚度降低，折射率升高，但溫度達到1000oc時折射率急劇降低；沉積氨化硅薄膜后400oc退火可以促進氫擴散，提高鈍化效果；超過400oc后氫開始逸失，晶體硅材料中的少子壽命急劇下降； rtp （快速熱處理）處理所導致氫的逸失比常規退火處理顯著。 -
The proper temperature is felt about from the substrate of p ( 100 ) cz - si, and it is found that the solar cell conversion efficiency has been improved from 8. 85 % to 11. 45 % for the annealing process. suitable processing conditions for cells " fabrication, hydrogen passivation, sinx anti - reflection coating deposited by plasma enhanced chemical deposition ( pecvd ) are also studied
將太陽電池樣品分別用pecvd （ plasmaenhancedchemicalvapordeposition ）做減反射膜，用fg （ forminggas ）燒結，測試電池性能，發現用pecvd處理后電池效率有所提高，用fg燒結后同樣有所改善。 -
Zno is a ii - vi wide bandgap semiconductor which is used for various applications such as gas sensors, bulk - acoustic - wave devices, surface - acoustic - wave devices, varistors, light emitting, light detecting devices and so on. undoped and al doped zno thin films have also been widely used in transparent conducting layers because of their higher thermal stability and good resistance against hydrogen plasma processing damage compared with ito ( sn - doped in2o3 ) films
Zno是一種新型的直接帶隙寬禁帶半導體材料，具有六方纖鋅礦結構，較高的激子束縛能（ 60mev ） ，較低的電子誘生缺陷和閾值電壓低等優點，在uv探測器、藍紫光led和ld等光電子器件領域有巨大的應用潛景。 -
The ci ~ - c : h film was prepared by the means of plasma assistance chemical vapor deposition with hydrocarbon n - butylamine ( ch3ch2ch2ch2nh2 ) as carbon source. the material of carbon source was carried into chemical vapor deposition chamber under pure hydrogen
採用等離子體輔助化學氣相沉積方法，以碳氫化合物正丁胺（ ch _ 3ch _ 2ch _ 2ch _ 2nh _ 2 ）作為碳源物質，用高純氫氣作為載氣，將碳源物質攜帶進入反應室。 -
The main process parameters include hydrogen content in the gas sources, hydrogen plasma catalyst pretreatment, substrate bias, deposition temperature and plasma flow guiding
主要之製程參數包括氣源中之氫氣含量、氫電漿前處理、基材偏壓、沉積溫度以及電漿導流板之施加。 -
Pulsed, filtered cathode arc plasma deposition ( pfcapd ) is a new deposition technology for a range of metals and compounds films free of the microdroplets associated with conventional arc evaporation, and it seems as one of the best methods to deposition hydrogen - free diamond like carbon which has widespread applications for its unique properties
脈沖磁過濾陰極弧等離子體沉積由於能很好地過濾液滴，沉積幾乎所有金屬及其合金薄膜材料，尤其能沉積極有應用前景的類金剛石膜及用於微電子工業的銅內連材料，日益受到重視。 -
This paper introduces several hydrogen production methods, including steam reforming, partial oxidation method, autothermal oxidation and plasma reforming, for fuel cell vehicle, and also points out the current technical status and future pngv goals for on - board gasoline fuel processor
摘要介紹了用於燃料電池汽車的幾種車載汽油制氫技術，包括水蒸氣重整制氫、部分氧化制氫和自熱氧化制氫、等離子法制氫，指出了現有車載汽油制氫裝置技術水平和美國「新一代汽車協調會」對車載汽油制氫技術的目標要求。
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