impedance loss 中文意思是什麼
impedance loss
解釋
阻抗損耗-
Each unit of transformer is tested in accordance with the following items : winding d. c resistance test. measurement of turn ratio and calibiation of voltage vector relation. measurement of impedance voltage and load loss
直流電阻測試匝數比測量及電壓矢量關系的校定阻抗電壓及負載損耗的測量空載損耗及空載電流的測量工頻耐壓測試感應耐壓測試絕緣電阻測試局部放電測試外觀和尺寸的檢驗銘牌的檢驗等。 -
Windings d. c. resistance measurement, measurement of impedance voltage and on - load loss, measurement of no - load loss and on cload current, power frequency withstand voltage test, inductive voltage with standing test, measurement of partial discharge level, inspection of appearance and dimension inspection of name plate
直流電阻測試匝數比測量及電壓矢量關系的校定阻抗電壓及負載損耗的測量空載損耗及空載電流的測量工頻耐壓測試感應耐壓測試絕緣電阻測試局部放電測試外觀和尺寸的檢驗銘牌的檢驗等。 -
Anechoic coatings " efficiency is getted from its front and back many layer ' s transfer loss compared. first, absorptive characteristic of homogeneous material is analyzed thoroughly. then wkb perturbation means are used to calculate absorption coefficient of the impedance transition structure in this paper
本論文首先對均勻材料的吸聲特性做了深入的分析，並詳細討論了wkb微擾攝動法，利用wkb方法計算阻抗過渡結構的吸聲系數。 -
Impedance, reflection coefficient, return loss, and vswr test procedure measured in the time and frequency domain for electrical connectors, cable assemblies or interconnection systems
電連接器電纜附件或互連系統在時間和頻率域中測量的阻抗反射系數回程損耗和vswr試驗程序 -
Sub - c mh - ni power batteries were prepared with excellent electrochemical performance based on the research of the high rate performance at different temperature. the change of temperature, impedance and weight loss was investigated in the process of recycle at high rate. it showed that the discharge time is 5. 9min at 10c and the middle voltage is 1. 05v
三、根據對電池大電流和溫度性能的研究，研製了具有較好電化學性能的動力型鎳氫電池，並分別測試了電池在大電流循環過程中的溫度、內阻、重量和正負極板等的變化情況，以此分析引起電池性能衰減的原因。 -
Therefore, the method of lines is applied to characterize the influence of metallization thickness and conductivity loss on the velocity match and impedance match
為此，論文著重分析了共面電極的厚度與有限電導率對行波調制器的微波特性的影響。 -
Compared with the similar research results, the weighted control ic here has the following characteristics : ( 1 ) the circuit structure is simpler ; ( 2 ) the chip ' s fabrication is compatible with standard cmos process ; ( 3 ) n - mosfets with high w / l ratio and short channels are used for weighting and output to reduce the insertion loss ; ( 4 ) the weighting factor varies in a relatively wide range with the controlling signals ; ( 5 ) input and output impedance approach 50 in low frequency ( e. g. 50mhz ), while in higher frequency they slightly deviate from 50, hence the energy reflection lower than 0. 1 ; ( 6 ) it completes the functions of sampling, weighting, controlling and summing of high frequency analog signals
它的加權控制電路與已報道的相關電路相比具有如下特點：電路結構簡單；製造工藝與普通cmos工藝兼容：短溝道，高寬長比的nmos晶體管具有低的通導電阻，將其作為加權、輸出器件可降低由電路引起的插入損耗；改變加權信號，可實現權值在較大范圍內的連續變化；輸入、輸出阻抗在低頻（如50mhz ）下接近50 ，而在高頻下略有偏離50 ，但反射系數均低於0 . 1 ；實現了對高頻信號的取樣、加權、控制、疊加功能的迭加。 -
The thesis mainly investigated the bati _ 4o _ 9 ( bt _ 4 ), which has the lowest dielectric loss in ba - ti system, and ( ba, sr ) tio _ 3, the a position substitute compound of batio _ 3. the dielectric properties of bt _ 4 / bst with different preparation way and different elements doping were investigated. a archimedes method, xrd, sem, impedance analyzer, network analyzer and hakki - coleman method were used to investigate the density, phase formation, microstructure, dielectric properties and doping mechanisms
本論文以在ba - ti系中具有最低介電損耗的bati _ 4o _ 9 （ bt _ 4 ）高頻介質陶瓷和batio _ 3a位sr取代而得的（ ba ， sr ） tio _ 3 （ bst ）高頻介質陶瓷作為研究對象，對不同粉體制備方法制備的bt _ 4 / bst高頻電介質材料進行不同元素的摻雜，運用阿基米德方法， x射線衍射分析儀，掃描電子顯微鏡和阻抗分析儀，網路分析儀， hakki - coleman法等方法手段和測試儀器測試燒成樣品的密度，相組成情況，微觀結構和介電性能，探討造成介電性能起伏的形成機理。 -
The calculation results have shown that when the angles of the center electrode and the grounds decrease, the effective index, the characteristic impedance, and the conductor loss all decrease
通過計算發現，隨著中間電極角度和地電極角度增加，有效折射率、特徵阻抗同時減小，導體損耗系數也隨之減小。 -
It has been shown by our calculations that conductor loss is greatly reduced under velocity matching with relatively thick coplanar waveguide electrodes and thick buffer layer, but the characteristic impedance can not match with that of the external circuit at the same time, and the modulation bandwidth is confined in this case
然後，用一般的橢圓積分計算了普通共面波導型調制器的有效折射率、特徵阻抗和導體損耗系數。通過計算發現，採用厚電極和厚緩沖層結構，在實現速度匹配的情況下，可以大大減小導體損耗，但是由於阻抗不能同時滿足匹配，調制帶寬受到限制。 -
The research and development for the bump orbit injection system with four kicker magnets centralized in nsrl phase project, and research of some key techniques were summarized, including micro - second pulse ferrite kicker magnet, coated ceramic chamber, measurement device for loss impedance, bpm calibration system, etc
摘要介紹了國家同步輻射實驗室二期工程改造中四沖擊磁鐵集中布局凸軌注入系統研發過程，以及對若干關鍵技術的攻關，包括微秒脈沖鐵氧體沖擊磁鐵研製，鍍膜陶瓷真空盒研製，縱向阻抗測量裝置研製， bpm標定裝置研製等。 -
It is shown that good performance on millimeter - wave and centimeter - wave can be achieved respectively by electric loss and magnetic loss, then through improving the impedance matching between layers compatible absorbability will be obtained on the whole by double - layer structure letting the centimeter - wave absorbing layer be the inner layer and the millimeter - wave absorbing layer the outer layer
理論分析和實驗結果表明，先分別以電損耗和磁損耗為主，採用單層結構分別對毫米波和厘米波實現較好的吸收，然後以厘米波吸收層作為內層，以毫米波吸收層作為外層，並進一步改善內外層之間的阻抗匹配，利用兩層結構可以對毫米波和厘米波實現較好的兼容吸收。 -
The condition that exists when two coupled circuits are adijusted so that the outp - ut impedance of one circuit equals the input impedance of the other circit connec - ted to the first, there is a minimum power loss between two circuits
指一個存在的條件，當調整兩個偶合電路使得其中一電路的輸出阻抗與另一電路的輸入阻抗相等進稱之，當他們連接的阻抗相等時，兩電路間的能量損失最低。 -
The mechanism of phenol transport through the supported liquid membrane ( slm ) and the factors affecting the permeability coefficient were investigated. the method dynamic impedance monitor was established, and the stability and the loss process of membrane liquid of slm were investigated by this method
研究探討了苯酚在支撐液膜中的傳質機理，考察了各因素對滲透系數的影響;建立了研究支撐液膜穩定性的動態電阻監測法，並對支撐液膜的膜相液體流失情形進行了研究。
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