implantation dose 中文意思是什麼

implantation dose 解釋
注入劑量
  • implantation : n. 1. 種植。2. 插入；灌輸，鼓吹。3. 【醫學】皮下注射。
  • dose : n 1 （藥的）一服，一劑；藥量，劑量。2 苦藥，討厭的東西。3 （酒中的）配料，增味劑。4 （處罰等）一...
  1. Clinical observation on treatment of epilepsy general tonic - clonic attack with catgut implantation at acupoint plus antiepileptic western medicine of small dose

    穴位埋線加小劑量抗癇西藥治療癲癇全身強直一陣攣發作臨床觀察
  2. The distribution fractions of mutants with higher avermectin titer than the original had correlation with implantation dose. after ion implantation mutation there were many types of morphology of colony, we stdudied the relationship between the colony shape and the ability of yielding, found that gray and protuberant colony had the highest titer

    離子注入后阿維鏈黴菌的菌落形態發生了很大的變化，其中灰色，邊緣整齊，中間突出有開裂的菌落和為灰色，邊緣波浪狀，中間突出有放射狀開裂的菌株產量較高。
  3. Effect of nitrogen implantation technologies on total dose rad - hardness of

    材料抗輻照性能的影響
  4. In this research, we obtained the results as follows : firstly, the germination vigor of m0, m, and m2 seeds irradiated by the different doses of low - energy n * were compared and analyzed in our experiments. the results showed that the germination and seedling formation rates of the treated seeds and their offspring seeds were lower than that of the control and the rates decreased with the implantation dose intensification. furthermore, the germination and seedling formation rates of the seeds treated with the dose of sox 1015n7cm2 were only 7

    通過本文的研究，主要取得了如下的結果：首先，對不同劑量的低能n ~ +處理的擬南芥的m _ 0代、 m _ 1代和m _ 2代種子的萌發力進行了比較和分析，發現經不同劑量的低能離子處理的擬南芥的當代和後代的種子的發芽率和成苗率都比對照有不同程度的降低，降低關系與劑量成正相關，其中80次劑量處理的當代種子的發芽率和成苗率僅為對照的7 . 81和58 . 82 ，這表明低能離子注入可以引起種子的萌發力的下降。
  5. With increasing implantation dose, the thickness of the box layer increases while that of the si over - layer decreases. the thickness of the si over - layer is dependent of the ion energy

    通過調節注入能量可獲得所需要的不同表層硅厚度的soi結構材料，但為獲得高質量的soi材料，注入能量需要和注入劑量有合適的匹配。
  6. The soi is of crystal quality and the box is uniform in thickness, with the interfaces of si / sioa / si smooth and sharp. we have systematically studied the dependence of the formed soi structure on the process parameters, such as ion energy, implantation dosage, substrate temperature, as well as the annealing temperature. with xtem, sims, srp, rbs, ir, raman, aes, xps and other characterization tools, it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists

    本論文還系統地研究了不同注入劑量、注入能量、注入時基底溫度以及退火溫度對所形成soi結構性能的影響，藉助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等測試分析手段，我們發現，與傳統注氧隔離（ simox ）技術類似，存在著「劑量窗口」形成優質的soi材料，但在水等離子體離子注入方式中soi材料結構質量對劑量變化更為敏感，隨著注入劑量的增大， soi材料的埋層厚度增大而表層硅厚度減小。
  7. For instance, the dwarf character in the plants treated with the dose of 80 x1015 was stable in inheritance in consecutive three generations. thus it can be seen that low - energy ion implantation causes developmental state changes and phenotypic variations and some changes and variations can be inherited stably

    以上結果充分顯示低能離子能夠引起生物體dna產生變異，從而導致表型的變異，是一種有效的誘變劑，表明離子柬生物技術是一種非常有效的物理誘變技術，在生產實際中具有廣泛的應用價值。
  8. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige
  9. A hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. after annealing, vo2 film with tcr ( temperature coefficient of resistance ) as high as 4 % was obtained. the bombardment of ar + could break v - o bond of v2o5 molecule in deposited film and implanted h + resulting in the deoxidization of v2o5, so the vo2 thin film could be prepared by proper control of the dose of ar + / h + implantation

    利用離子束增強沉積設備，在ar ~ +離子束對v _ 2o _ 5靶濺射沉積的同時，用氬、氫混合束對沉積膜作高劑量的離子束轟擊，使得被氬離子轟擊后斷鍵的氧化釩分子，再被注入氫降價，然後經適當的退火，成功地制備了熱電阻溫度系數高達4的vo _ 2薄膜（國外報道值為2 - 3 ） ，並研製了單元懸空結構探測器和8 1 ， 16 1線性陣列。
  10. In the present work, water plasma ion implantation, instead of the conventional oxygen plasma ion implantation, has been employed to fabricate soi materials. the masses of the three dominant ion species in the water vapor plasma, h2o +, ho +, and o +, are very close to each other, which overcome the problem of co - existence of o and 02 in oxygen plasma source. the oxygen depth profiles in the water plasma ion as - implanted silicon do not disperse much, which makes it possible for the formation of single buried oxide ( box ) layer by choosing appropriate implantation energy and dose

    本論文創造性地採用水等離子體離子注入方式代替傳統的氧離子注入方式來制備soi結構材料，由於水等離子體中的三種離子h _ 2o ~ + 、 ho ~ +和o ~ +質量數相差很小，克服了氧等離子體中因o _ 2 ~ +和o ~ +質量數相差大而引起的氧在硅中的分佈彌散，使注入硅后的氧射程分佈相對集中，比較容易退火后形成soi結構材料。
  11. Dose - effect relationship between the ability of neural regeneration and radiation after re - implantation of invading sciatic nerve following one - off radiation in vitro

    受侵坐骨神經體外一次性放射回植后神經干再生能力與放射的量效關系
  12. Secondly, we measured the electrical properties of the ion - implanted samples by hall method ( square carrier concentration, square resistance and carrier mobility ). after comparing and analyzing, we can know that the electrical properties were affected by the difference of mn dose, the implantation of c and the annealing temperature

    其次，利用霍爾測試方法測量了每種離子注入樣品的電性質（方塊載流子濃度、方塊電阻及載流子遷移率） ，通過比較分析了解到mn元素注入劑量、 c元素的注入以及退火溫度的不同，都會對樣品的電性質產生影響。
  13. Effect of the auxiliary electrode radius in a vacant circular pipe on ion dose in plasma source ion implantation

    附加電極半徑對空心圓管端點附近離子注入劑量的影響
  14. An ion implanter without ion mass analyzer was applied to simulate the phi procedure to fabricate soi materials by implantation of water plasma ions. thin soi structure was successfully fabricated by the implanter using 50 ~ 90kev water plasma ion implantation with the dose ranging from 2 - 6. 5 + 017cm - 2 and, subsequently, the high temperature annealing

    我們使用無質量分析器的離子注入機，模擬等離子體離子注入過程，成功地在該注入機上用水等離子體離子注入制備出了界面陡峭、平整，表層硅單晶質量好，埋層厚度均勻的薄型soi材料。
  15. 3. to avoid the high temperature process in sige cmos technics, appropriate implantation energy and dose and rtp ( rapid thermal anneal ) are introduced into the the fabrication of sige cmos double - well and source

    3 .研究了離子注入法形成sigehcmos的雙阱及源漏工藝。確定了注入的離子類型、劑量、能量等關鍵參數。
  16. In this paper, we used different doping means to prepare the mn - doped gaas material. firstly, we incorporated mn of different dose into gaas by ion implantation, including the couple - ion implantation with mn + and c, then performed rapid thermal annealing in different temperature. furthermore, we incorporated mn into gaas using different mn sources ( pure mn and mnas ) by diffusion

    本論文利用不同摻雜方法進行了摻mngaas這種dms材料樣品的制備，首先利用離子注入法對砷化鎵（ gaas ）材料進行不同劑量的錳（ mn ~ + ）離子注入，其中包括加碳（ c ）的雙離子注入，然後在不同溫度下進行快速退火處理；此外還利用擴散法對gaas晶片進行不同mn擴散源（純mn 、及mnas ）的摻雜。
  17. Effects of si ion implantation on the total - dose radiation properties of simox soi materials

    材料抗總劑量輻照性能的影響
  18. Rapid thermal treatment was found to greatly reduce leakage current down to 2 orders. and a combinatorial approach was applied to study the dielectric property change with varied bi implantation dose

    以快速退火代替管式爐退火大幅度改善了其漏電性能，降低漏電流2個數量級以上。
  19. Recently, a new gettering technique, which cavities formed by high - dose helium - implantation and subsequent annealing at lower temperature is efficiently at gettering metal impurities, has been concentrated

    近年來一種新的吸雜技術?氦微孔吸雜技術因其對金屬雜質顯著的吸除效果而備受關注。
  20. Firstly, the theories relative to radiation effect are discussed in brief, including some models of interface trap formation and process of producing oxide trap charge in radiated mos devices. besides, the radiation effects at low dose rate and the mechanism of radiation hardening for bf2 implantation are reviewed too

    首先，對有關輻照效應的理論進行了簡要的敘述，介紹了輻照過程中氧化物陷阱電荷的產生過程以及界面態建立的一些模型，另外，還對低劑量率輻照效應以及bf _ 2 ~ +注入加固mos器件的機理做了回顧。
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