inp 中文意思是什麼

inp 解釋
磷化銦
  1. Positron lifetime study of defects in undoped si - inp

    中缺陷的正電子壽命研究
  2. Non - stoichiometry related deep level defects in semi - insulating inp

    半絕緣磷化銦中與非化學配比有關的深能級缺陷
  3. Investigation of residual donor defects in undoped and fe - doped lec inp

    非摻及摻鐵磷化銦中的殘留施主缺陷
  4. Preparation of semi - insulating material by annealing undoped inp

    高溫退火非摻雜磷化銦制備半絕緣材料
  5. Influence of fe doping concentration on some properties of semi - insulating inp

    摻鐵濃度對半絕緣磷化銦的一些性質的影響
  6. For the requirement of more negative differential resistance ( ndr ) routes, three split quantized energies are formed in the four - period inp / ingaas superlattice structure with relatively thin ingaas quantum wells under ideal flat - band condition, and high - field domain in the superlattice is formed under sufficiently large operation bias

    為獲得?多軌跡的負微分電阻，本研究組件使用?相當薄之砷化銦鎵?子井，可使四周期磷化銦/砷化銦鎵超晶格結構在平帶情況下形成三個分?的?子化能階，且於足夠大的操作偏壓下在該超晶格結構中形成?高場區域。
  7. The error of the calculation methods used in this paper is estimated by comparing the calculation results of ge, gap, gaas arid inp with their experimental results. the error due to ignoring the lattice aberration causing by substitutional atoms is also discussed. the way to increase the accuracy is discussed

    通過比較ge 、 gap 、 gaas和inp的計算結果和實驗結果之間的差別，對該方法的計算誤差進行了估算，分析了由於忽略雜原子取代所導致的晶格畸變產生的誤差，並提出了解決辦法。
  8. So it is easy to regulate parameters to obtain results. in addition, circuit model of quantum cascade laser whose lattice matchs with inp has been structured and some valuable conclusions have been gotten.

    對g . rossi提出的多量子阱激光器的電路模型進行了改造，考慮到模型的實用性，模型用多個分支電路來描述，以便在模擬時調整參數的設置相對容易，獲得結果更快。
  9. The intrinsic carrier concentration reduces when decreasing the v / iii ratio. the high quality of in0. 53gao. 47as can be obtained at the range of 10 - 30 seconds of exchange time between ashs and phs. when the thickness of the buffer layer between the inp substrate and ingaas epilayer is 0. 2 um the mobility becomes the maximum and the carrier concentration is the lowest

    /比對外延層的表面形貌有較大影響，增大/比有利於提高材料的結晶質量；隨著/比增加，遷移率升高；本徵載流子濃度隨著/比減少而降低； ash _ 3和ph _ 3轉換時間在10秒到30秒之間可以獲得質量較好的ingaas外延層；在inp緩沖層厚度為0 . 2 m時遷移率達到最大，載流子濃度達到最低。
  10. As a more and more widely used semiconductor material, inp not only has very good electric properties but also is radiation hardness. inp is the next generation solar cell for space applications

    Inp材料作為一種應用越來越廣的半導體材料，除了具有良好的電特性之外，它具有非常突出的抗輻射能力，是下一代航天器用太陽電池的首選材料。
  11. The parametric programming of ceramic tool chips is also realized so that the chip program can be easily obtained through selecting the shape of the chip and inp utting the necessary parameters

    利用系統的參數編程功能，操作者只需選擇刀片形狀並輸入刀片參數，系統可自動生成零件加工程序，完成刀片的加工。
  12. Influence of deep level defects on electrical properties and defect control in semi - insulating inp

    中深能級缺陷對電學性質的影響和缺陷的控制
  13. In order to improve the design of mqw structure and the quality of material, gainp / ( alxga1 - x ) inp mqw have been manufactured and analyzed by photoluminescence and raman. great achievements have been obtained. ( 1 ) the theory of photoluminescence of galnp / algalnp mqw was analyzed

    本論文主要通過光致發光和喇曼兩種檢測方法，對gainp （ al _ xga _ （ 1 - x ） ） inpmqw外延片的光學性質進行深入的理論分析和實驗研究，以達到改善mqw結構設計和提高材料生長質量的目的。
  14. Performance of a self - aligned inp gainas shbt with a novel t - shaped emitter

    單異質結雙極晶體管的性能
  15. Study of compensation defects in undoped semi - insulating inp by positron lifetime spectroscopy

    中補償缺陷正電子壽命譜的研究
  16. Part 5 what time big direct in pard of perfect persons in the fifth is institutional to considers, this is the texual point part, the instituioanl present condition inp. c. in perfect in a few aspects system. fisit is to strengthen and perfect the leadong of communist party of china ; scond is to perfect constitution direct system ; tnree is improve p. c. oneself direct ability four is an improvement with the p. c. method ; five is to perfect law system

    第五部分完善人大監督制度的幾點思考這是本文的皿點部分，結合人大監督制度的現狀和自己工作實踐，提出從以下幾個方面完善人大監督制度:一是加強與完替黨對人大工作的領導;二人大監督是完善人大憲法監督制度;三是提高人大自身監督能力;四是改進和完善人大監督方式;五是完善人大監督法律制度。
  17. Morphology of low temperature buffer layers and its influence on inp epilayer growth

    低溫緩沖層的表面形貌及對其外延層生長的影響
  18. Takeshima, masumi. " auger recombination in inas, gasb, inp, and gaas. " j. appl. phys. 43 ( 1972 ) : 4114 - 4119

    對於一些重要的二元化合物之歐傑再結合的有用資訊（材料參數與理論） 。
  19. Activation of fe doping and electrical compensation in semi - insulating inp

    的鐵摻雜激活與電學補償
  20. 1550nm polarization - insensitive semiconductor optical amplifier based on algainas - inp

    偏振無關半導體光放大器
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