interstitial lattice 中文意思是什麼

interstitial lattice 解釋
間隙晶格
  • interstitial : adj. 1. 裂縫間的；空隙的；在裂縫間的。2. 【解剖學】細胞（組織）間隙的，間質的。3. 【物理學】填隙的。n. 【物理學】填隙，填隙子。adv. -ly
  • lattice : n. 1. 格子。2. 【物理學】點陣；網路。3. 【建築】格構。vt. 1. 把…製成格子狀。2. 用格子覆蓋[裝飾]。
  1. Some impurities are entirely substitutional or interstitial in behavior, but others can exist in either lattice position.

    有些雜質是單純的替代位或單純的間隙位雜質，但也有的可以在任一晶格位置存在。
  2. Point defect - a crystal defect that is an impurity, such as a lattice vacancy or an interstitial atom

    點缺陷-不純凈的晶缺陷，例如格子空缺或原子空隙。
  3. Slight displacements of atoms relative to their normal lattice positions, normally imposed by crystalline defects such as dislocations, and interstitial and impurity atoms

    原子相對於它們正常點陣位置的輕微位移，通常是由晶體的缺陷，如位錯、間隙原子、雜質原子存在引起的。
  4. The n type carrier was provided by interstitial zn atom, and zn / o ratio and crystalline quality of zno thin film effeted its hall mobility. when zno thin film was annealed in the ar ambience, p conduction type was founded in the zno thin film which grew in oxygen enrichment condition. this might be excess oxygen in zno thin film entered interstitial position of crystal lattice ( oi ), and p type carrier was from oi

    在ar氣保護下，對富氧條件下生長的zno薄膜的退火后的霍爾測量中發現， zno薄膜呈現p型導電狀態，分析認為，這可能是由於富氧狀態下生長的zno薄膜中過量的o在ar氣保護下退火沒有逸出薄膜，反而進入了zno薄膜的間隙位置，成為正電中心，使zno薄膜呈現p型導電。
  5. The lattice constants were refined using celref program. when implanted c / fe ions ratio is 0. 5 %, the p lattice is expanded, though c atom is much smaller han si. this is probably due to the solid solution in interstitial state

    單胞的間隙位置，形成間隙型固溶體，使晶格膨脹；當摻雜的碳離子含量增加到一定的程度時，趨向于形成置換固溶體，因為碳和硅屬同族元素價態相同，所以碳會置換p 。
  6. In the theoretical simulation on the behavior of single helium atom in aluminum, the varieties of energy data including the formation, migration, binding, and dissociation energies for single helium atom at the interstitial, vacancy, grain boundary, and dislocation sites in aluminum lattice were calculated, based on the density functional theories, general gradient approximation and pseudopotential plane wave method. results showed that the most fittable sites for containing helium atoms inside the cell are vacancies. but in the view of the whole lattice, grain boundaries are the best

    計算結果表明，晶內he原子擇優佔位區是空位，而在整個晶體范圍，最有利於容納he原子的區域是晶界，位錯容納he原子的能力次於晶界和空位；在fcc -鋁的間隙位中， he原子優先充填四面體間隙位；晶內間隙he原子是可動的，通過間隙he原子的運動，可在晶內聚集，或被空位、晶界、位錯等缺陷束縛。
  7. The xps analyses show that there were two different chemical conditions of li + ions when li + ions were inserted into v2o5 - moo3 xerogel, corresponding to the li + ions in the interlayer and interstitial positions ( localized by the layers ) of v2o5 - moo3 lattice, respectively

    當peo嵌入后，層間li ~ +離子含量大大增多， li ~ +離子以層間li ~ +離子（非水化）為主要存在形式，並且peo的嵌入削弱了li ~ +離子與周圍環境的相互作用。
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